公开(公告)号：US20160005597A1

公开(公告)日：2016-01-07

申请号：US14847350

申请日：2015-09-08

申请人： International Business Machines Corporation

发明人： Donald F. Canaperi ,  Son V. Nguyen ,  Deepika Priyadarshini ,  Hosadurga K. Shobha

IPC分类号： H01L21/02

CPC分类号： H01L21/02126 ,  H01B3/46 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348

摘要： Disclosed herein is an ultra-low dielectric (k) film and methods of making thereof. A ultra-low k film has a covalently bonded network comprising atoms of silicon, oxygen, carbon, and hydrogen, a cyclotrisilane structure, and a plurality of pores having a pore size distribution (PSD) of less than about 1.1 nanometers (nm). The ultra-low k film has a k value of less than about 2.4 and at least about 28 atomic percent of carbon.