公开(公告)号：US07285477B1

公开(公告)日：2007-10-23

申请号：US11383563

申请日：2006-05-16

申请人： Kerry Bernstein ,  Timothy Joseph Dalton ,  Jeffrey Peter Gambino ,  Mark David Jaffe ,  Paul David Kartschoke ,  Anthony Kendall Stamper

发明人： Kerry Bernstein ,  Timothy Joseph Dalton ,  Jeffrey Peter Gambino ,  Mark David Jaffe ,  Paul David Kartschoke ,  Anthony Kendall Stamper

IPC分类号： H01L21/30

CPC分类号： H01L21/76898 ,  H01L21/84 ,  H01L23/481 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having wiring levels on opposite sides and a method of fabricating a semiconductor structure having contacts to devices and wiring levels on opposite sides. The method including fabricating a device on a silicon-on-insulator substrate with first contacts to the devices and wiring levels on a first side to the first contacts, removing a lower silicon layer to expose the buried oxide layer, forming second contacts to the devices through the buried oxide layer and forming wiring levels over the buried oxide layer to the second contacts.

摘要翻译： 具有相对侧的布线电平的半导体器件以及制造与相对侧的器件和布线电平接触的半导体结构的方法。 该方法包括在绝缘体上硅衬底上制造器件，其中器件的第一接触和第一侧的第一接触处的布线电平，去除下硅层以暴露所述掩埋氧化物层，形成第二接触器件 通过掩埋氧化物层形成掩埋氧化物层上方的布线电平到第二触点。

公开(公告)号：US20070066067A1

公开(公告)日：2007-03-22

申请号：US11550190

申请日：2006-10-17

申请人： Edward Crandal Cooney ,  Anthony Kendall Stamper

发明人： Edward Crandal Cooney ,  Anthony Kendall Stamper

IPC分类号： H01L21/311 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/67069 ,  H01J2237/022 ,  H01L21/02046 ,  H01L21/31138

摘要： A method of reducing foreign material concentrations in an etch chamber having inner chamber walls is described. The method includes the step of etching a work piece in the etch chamber such that reaction products from the work piece having one or more elements form a first layer of reaction products that partially adhere to the inner chamber walls. A species is introduced into the etch chamber that increases the adhesion of the first layer of reaction products to the inner chamber walls.

摘要翻译： 描述了在具有内室壁的蚀刻室中减少异物浓度的方法。 该方法包括在蚀刻室中蚀刻工件的步骤，使得具有一个或多个元件的工件的反应产物形成部分粘附到内室壁上的第一反应产物层。 将一种物质引入到蚀刻室中，这增加了第一层反应产物与内室壁的粘附性。