公开(公告)号：US11842679B2

公开(公告)日：2023-12-12

申请号：US16964735

申请日：2019-01-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kouhei Toyotaka ,  Daiki Nakamura

IPC: G09G3/32 ,  G09G3/3225 ,  H10K50/86 ,  H10K59/38 ,  H10K59/40 ,  H10K59/131 ,  G06F3/01 ,  G06F3/02 ,  G06F3/0354 ,  G06F3/041 ,  G09G3/20

CPC classification number: G09G3/3225 ,  H10K50/86 ,  H10K50/865 ,  H10K59/131 ,  H10K59/38 ,  H10K59/40 ,  G06F3/013 ,  G06F3/02 ,  G06F3/03545 ,  G06F3/041 ,  G09G3/2007 ,  G09G2300/0426 ,  G09G2300/0439 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2320/0233 ,  G09G2320/0247 ,  G09G2330/021 ,  G09G2354/00

Abstract: A novel display panel that is highly convenient or reliable is provided. The display panel includes a display region, a first functional layer, and a second functional layer. The display region includes a pixel, and the pixel includes a display element and a pixel circuit. The first functional layer includes the pixel circuit, a scan line, and a first connection portion. The display element is electrically connected to the pixel circuit, and the pixel circuit is electrically connected to the scan line. The second functional layer includes a region overlapping with the first functional layer, the second functional layer includes a driver circuit and a wiring, and the driver circuit is provided so that the pixel circuit is positioned between the driver circuit and the display element. The wiring is electrically connected to the scan line at the first connection portion, and the wiring is electrically connected to the driver circuit.

公开(公告)号：US11513409B2

公开(公告)日：2022-11-29

申请号：US17042326

申请日：2019-03-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kouhei Toyotaka ,  Koji Kusunoki

IPC: G02F1/1368 ,  H01L27/12

Abstract: A highly visible display device is provided. The display device includes a transistor, a first conductive layer, a second conductive layer, and a third conductive layer. The channel width of the transistor is greater than or equal to 30 μm and less than or equal to 1000 μm. The transistor includes 2 to 50 semiconductor layers, each of which includes a first region, a second region, and a channel formation region. The channel formation region has a region overlaps with the first conductive layer. The first region overlaps with the second conductive layer and does not overlap with the first conductive layer. The second region overlaps with the third conductive layer and does not overlap with the first conductive layer. The third conductive layer has a function of transmitting visible light, and the second region and the third conductive layer in a stacked state have a function of transmitting visible light.

公开(公告)号：US11417273B2

公开(公告)日：2022-08-16

申请号：US16765496

申请日：2018-12-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kouhei Toyotaka ,  Kei Takahashi ,  Susumu Kawashima ,  Shunpei Yamazaki

IPC: G06F3/038 ,  G09G3/3233 ,  H01L27/32 ,  H01L27/12 ,  H01L29/786

Abstract: A semiconductor device that reduces variations in the characteristics of driving transistors and corrects image data is provided. The semiconductor device includes an image data retention portion, a correction data retention portion, a driver circuit portion, a display element, and a threshold voltage correction circuit portion. The image data retention portion has a function of retaining first image data, and the correction data retention portion has a function of retaining correction data, and a function of generating second image data corresponding to the first image data and the correction data when the first image data is retained in the image data retention portion. The driver circuit portion has a function of generating a current corresponding to the second image data and feeding the current to the display element, and the threshold voltage correction circuit portion has a function of correcting a threshold voltage of a driving transistor in the driver circuit portion. With the above structure, the semiconductor device can correct the image data, correct the threshold voltage of the driving transistor, and perform display based on the second image data.

公开(公告)号：US11257457B2

公开(公告)日：2022-02-22

申请号：US16971137

申请日：2019-02-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Susumu Kawashima ,  Kouhei Toyotaka ,  Koji Kusunoki ,  Kei Takahashi ,  Kentaro Hayashi

IPC: G09G5/10 ,  G09G3/36 ,  G09G3/34 ,  H01L29/786

Abstract: A display device operating at high speed is provided.
The display device includes a pixel provided with a first memory circuit, a second memory circuit, and a display unit, in which the first memory circuit and the second memory circuit are electrically connected to one electrode of the display unit. The operation of the display device includes a first period of writing first image data to the first memory circuit and writing second image data to the second memory circuit, a second period of supplying a first potential to the first memory circuit, a third period of displaying a first image corresponding to the first image data, a fourth period of setting a potential of the one electrode of the display unit to a second potential, a fifth period of supplying the first potential to the second memory circuit, and a sixth period of displaying a second image corresponding to the second image data.

公开(公告)号：US11087675B2

公开(公告)日：2021-08-10

申请号：US16758108

申请日：2018-11-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Susumu Kawashima ,  Koji Kusunoki ,  Kazunori Watanabe ,  Kouhei Toyotaka ,  Kei Takahashi ,  Kentaro Hayashi ,  Shunpei Yamazaki

IPC: G09G3/30 ,  G09G3/3225 ,  H01L27/32 ,  H01L29/786

Abstract: A display device that can display a high-luminance image is provided. The display device includes a display element and a memory circuit which is electrically connected to a first wiring and a second wiring. First, a reference potential is supplied to the first wiring. Next, a first image signal is supplied to the memory circuit through the second wiring. Then, the second image signal is added to the first image signal by supplying the second image signal to the memory circuit through the first wiring. After that, an image obtained by superimposing an image corresponding to the first image signal and an image corresponding to the second image signal on each other is displayed with the display element.

公开(公告)号：US11069718B2

公开(公告)日：2021-07-20

申请号：US17023863

申请日：2020-09-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kouhei Toyotaka ,  Kei Takahashi ,  Hideaki Shishido ,  Koji Kusunoki

IPC: H01L27/12 ,  H01L29/04 ,  H01L29/49 ,  H01L29/786 ,  H01L27/32

Abstract: A novel display device or the like in which a transistor connected to a scan line has small gate capacitance is provided. A novel display device or the like in which a scan line has low resistance is provided. A novel display device or the like in which pixels can be arranged with high density is provided. A novel display device or the like that can be manufactured without an increase in cost is provided. In a transistor including a first gate electrode and a second gate electrode, the first gate electrode is formed using a metal material with low resistance and the second gate electrode is formed using a metal oxide material that can reduce oxygen vacancies in an oxide semiconductor layer. The first gate electrode is connected to the scan line, and the second gate electrode is connected to a wiring to which a constant potential is supplied.

公开(公告)号：US20210193071A1

公开(公告)日：2021-06-24

申请号：US17177445

申请日：2021-02-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Susumu Kawashima ,  Kouhei Toyotaka ,  Kei Takahashi

IPC: G09G3/36 ,  G06F3/044 ,  G06F3/041

Abstract: A display device that achieves both high-accuracy sensing by a touch sensor unit and smooth input using the touch sensor unit is provided. The display device includes a display unit and the touch sensor unit. The touch sensor unit performs touch sensing operation at a different timing from display image rewriting by the display unit, whereby the high-accuracy sensing can be achieved. The display unit has a function of rewriting a display image only in a region that needs to be rewritten. In the case where the entire display region is not necessarily rewritten, the time for the sensing operation by the touch sensor unit can be lengthened, whereby the smooth input can be achieved.

公开(公告)号：US10784285B2

公开(公告)日：2020-09-22

申请号：US16126360

申请日：2018-09-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kouhei Toyotaka ,  Kei Takahashi ,  Hideaki Shishido ,  Koji Kusunoki

IPC: H01L27/12 ,  H01L29/04 ,  H01L29/49 ,  H01L29/786 ,  H01L27/32

Abstract: A novel display device or the like in which a transistor connected to a scan line has small gate capacitance is provided. A novel display device or the like in which a scan line has low resistance is provided. A novel display device or the like in which pixels can be arranged with high density is provided. A novel display device or the like that can be manufactured without an increase in cost is provided. In a transistor including a first gate electrode and a second gate electrode, the first gate electrode is formed using a metal material with low resistance and the second gate electrode is formed using a metal oxide material that can reduce oxygen vacancies in an oxide semiconductor layer. The first gate electrode is connected to the scan line, and the second gate electrode is connected to a wiring to which a constant potential is supplied.

公开(公告)号：US10586495B2

公开(公告)日：2020-03-10

申请号：US15651192

申请日：2017-07-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidetomo Kobayashi ,  Kouhei Toyotaka

IPC: G09G3/3266 ,  G09G3/34 ,  G09G3/36

Abstract: A display device that can be easily and more flexibly designed is provided. The display device includes a pixel circuit and a driver circuit in a display portion. The driver circuit includes a plurality of pulse output circuits. Each of the plurality of pulse output circuits has a function of driving a gate line. The pixel circuit is electrically connected to the gate line. Each of the plurality of pulse output circuits includes a first transistor. The pixel circuit includes a second transistor. A layer including the second transistor is over a layer including the first transistor, and the first transistor and the second transistor overlap with each other.

公开(公告)号：US10553726B2

公开(公告)日：2020-02-04

申请号：US15671199

申请日：2017-08-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kosei Noda ,  Kouhei Toyotaka ,  Kazunori Watanabe ,  Hikaru Harada

IPC: H01L29/786 ,  H01L27/108 ,  H01L27/11 ,  H01L27/12 ,  H01L49/02 ,  H01L29/24 ,  H01L29/417 ,  H01L29/423 ,  G06F15/76

Abstract: An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.