公开(公告)号：US20050082539A1

公开(公告)日：2005-04-21

申请号：US10981608

申请日：2004-11-05

申请人： Etsuko Fujimoto ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Shingo Eguchi

发明人： Etsuko Fujimoto ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Shingo Eguchi

IPC分类号： H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L29/78624 ,  H01L27/1222 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863

摘要： A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.

摘要翻译： 制造具有高可靠性和操作性能的半导体器件，而不增加制造步骤的数量。 栅电极具有层叠结构。 根据电路的功能，选择具有与栅电极重叠的低浓度杂质区域的TFT或具有不与栅电极重叠的低浓度杂质区域的TFT。

公开(公告)号：US06707068B2

公开(公告)日：2004-03-16

申请号：US10456608

申请日：2003-06-09

申请人： Etsuko Fujimoto ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Shingo Eguchi

发明人： Etsuko Fujimoto ,  Satoshi Murakami ,  Shunpei Yamazaki ,  Shingo Eguchi

IPC分类号： H01L2904

CPC分类号： H01L29/78624 ,  H01L27/1222 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863

摘要： A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.