公开(公告)号：US07916229B2

公开(公告)日：2011-03-29

申请号：US12318263

申请日：2008-12-23

申请人： Woo Sup Shin ,  Joo Soo Lim ,  Heung Lyul Cho ,  Hee Young Kwack

发明人： Woo Sup Shin ,  Joo Soo Lim ,  Heung Lyul Cho ,  Hee Young Kwack

IPC分类号： G02F1/136 ,  G02F1/1368 ,  G02F1/1343 ,  H01L21/02

CPC分类号： G02F1/134363 ,  G02F2001/13606 ,  G02F2001/136231 ,  G02F2201/124 ,  G02F2201/40 ,  H01L27/124 ,  H01L27/1288

摘要： A liquid crystal display device includes a gate line on a substrate; a data line crossing the gate line with a gate insulating film interposed between the gate line and the data line to define a pixel region; a thin film transistor at the crossing of the gate line and the data line; a pixel electrode connected to the thin film transistor; a common electrode forming a horizontal electric field with the pixel electrode in the pixel region; a gate pad connected to the gate line; and a data pad connected to the data line, wherein the gate pad and the data pad includes a lower pad in the same layer as the gate line and made of the same material as the gate line, a lower contact hole through the gate insulating film to expose the lower pad, an upper pad in the same layer as the data line, made of the same material as the data line, and connected to the lower pad through the lower contact hole, and an upper contact hole through a passivation film protecting the thin film transistor to expose the upper pad, and a semiconductor layer of the thin film transistor overlaps with the gate electrode of the thin film transistor, and has a width smaller than that of a gate electrode of the thin film transistor.

摘要翻译： 液晶显示装置包括在基板上的栅极线; 与栅极线交叉的数据线和插入在栅极线与数据线之间的栅极绝缘膜，以限定像素区域; 栅极线与数据线交叉的薄膜晶体管; 连接到薄膜晶体管的像素电极; 与像素电极在像素区域中形成水平电场的公共电极; 连接到栅极线的栅极焊盘; 以及连接到数据线的数据焊盘，其中栅极焊盘和数据焊盘包括与栅极线相同的层并且由与栅极线相同的材料制成的下焊盘，通过栅极绝缘膜的下部接触孔 以与数据线相同的材料制成的下焊盘，与数据线相同的层中的上焊盘露出，并通过下接触孔连接到下焊盘，以及通过钝化膜保护的上接触孔 所述薄膜晶体管暴露所述上焊盘，所述薄膜晶体管的半导体层与所述薄膜晶体管的栅电极重叠，并且具有比所述薄膜晶体管的栅电极的宽度小的宽度。

公开(公告)号：US20110027923A1

公开(公告)日：2011-02-03

申请号：US12898566

申请日：2010-10-05

申请人： Byun Chul Ahn ,  Jeong Hyun Kim ,  Heung Lyul Cho

发明人： Byun Chul Ahn ,  Jeong Hyun Kim ,  Heung Lyul Cho

IPC分类号： H01L33/08

CPC分类号： H01L27/3253

摘要： An organic light emitting device and a manufacturing method thereof are provided. The organic light emitting device includes a first display substrate, a second display substrate, and a first adhesive force improving member. The first display substrate includes a first substrate, a first electrode, organic light emitting patterns, a first spacer, and a second electrode. The first electrode is formed on an entire surface of the first substrate, and the organic light emitting patterns are disposed on the first electrode. The first spacer corresponds to the organic light emitting pattern and is disposed on the first electrode. The second electrode covers the organic light emitting patterns and the first spacer. The second display substrate includes a second substrate, and a first driving signal delivery part. The first adhesive force improving member electrically/physically couples the second electrode to the first driving signal delivery part.

摘要翻译： 提供了一种有机发光器件及其制造方法。 有机发光装置包括第一显示基板，第二显示基板和第一粘接力改善部件。 第一显示基板包括第一基板，第一电极，有机发光图案，第一间隔件和第二电极。 第一电极形成在第一基板的整个表面上，并且有机发光图案设置在第一电极上。 第一间隔物对应于有机发光图案并且设置在第一电极上。 第二电极覆盖有机发光图案和第一间隔物。 第二显示基板包括第二基板和第一驱动信号传送部。 第一粘合力改善构件将第二电极电/物理耦合到第一驱动信号传递部分。

公开(公告)号：US07388226B2

公开(公告)日：2008-06-17

申请号：US10963219

申请日：2004-10-12

申请人： Woong Kwon Kim ,  Young Gyoung Chang ,  Heung Lyul Cho

发明人： Woong Kwon Kim ,  Young Gyoung Chang ,  Heung Lyul Cho

IPC分类号： G02F1/136

CPC分类号： H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： A three-mask horizontal electric field applying type thin film transistor substrate is disclosed in which three conductive layers are formed. The first conductive layer contains a parallel gate and common lines and gate and common electrodes. A semiconductor pattern is formed on a gate insulating film coating the structure. The second conductive layer forms a data line, a source electrode connected to the data line and a drain electrode opposed to the source electrode on the semiconductor pattern. A protective film is coated thereon. The protective film and the gate insulating film are patterned to expose a portion of the drain electrode and a pixel hole. A third conductive layer is patterned to provide a pixel electrode connected to the exposed drain electrode and making an interface with the protective film within the pixel hole.

摘要翻译： 公开了一种三屏蔽水平电场施加型薄膜晶体管基板，其中形成三个导电层。 第一导电层包含平行栅极和公共线以及栅极和公共电极。 在涂覆该结构的栅极绝缘膜上形成半导体图案。 第二导电层形成数据线，连接到数据线的源电极和与半导体图案上的源电极相对的漏电极。 在其上涂覆保护膜。 对保护膜和栅极绝缘膜进行图案化以暴露漏电极的一部分和像素孔。 图案化第三导电层以提供连接到暴露的漏电极并与像素孔内的保护膜形成界面的像素电极。

公开(公告)号：US07064347B2

公开(公告)日：2006-06-20

申请号：US10962541

申请日：2004-10-13

申请人： Youn Gyoung Chang ,  Heung Lyul Cho

发明人： Youn Gyoung Chang ,  Heung Lyul Cho

IPC分类号： H01L29/10

CPC分类号： G02F1/13458 ,  G02F1/136213 ,  G02F2001/136236 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/66742

摘要： A thin film transistor substrate for a display device includes a gate line; a gate insulating film disposed over the gate line; a data line disposed on the gate insulating film intersecting with the gate line to define a pixel area; a thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode, and a channel between the source electrode and the drain electrode; a protective film disposed covering the gate line, the data line, and the thin film transistor; a pixel electrode connected to the drain electrode of the thin film transistor; and a storage capacitor having a first upper storage electrode connected to the pixel electrode, and a second upper storage electrode connected to the first upper storage electrode on a side surface basis via a first contact hole passing through the protective film and the first upper storage electrode at an overlapping portion of the gate line and the first upper storage electrode.

摘要翻译： 用于显示装置的薄膜晶体管基板包括栅线; 设置在栅极线上的栅极绝缘膜; 设置在栅极绝缘膜上的数据线，与栅极线交叉以限定像素区域; 薄膜晶体管，其包括连接到栅极线的栅极电极，连接到数据线的源电极，漏极电极和源电极和漏电极之间的沟道; 覆盖所述栅极线，所述数据线和所述薄膜晶体管的保护膜; 连接到薄膜晶体管的漏电极的像素电极; 以及存储电容器，其具有连接到所述像素电极的第一上部存储电极，以及第二上部存储电极，所述第二上部存储电极经由穿过所述保护膜的第一接触孔和所述第一上部存储电极， 在栅极线和第一上部存储电极的重叠部分。

公开(公告)号：US06686661B1

公开(公告)日：2004-02-03

申请号：US09686802

申请日：2000-10-12

申请人： Jae Gab Lee ,  Heung Lyul Cho

发明人： Jae Gab Lee ,  Heung Lyul Cho

IPC分类号： H01L2348

CPC分类号： H01L29/66765 ,  H01L29/4908 ,  Y10S438/927

摘要： A thin film transistor and a method of manufacturing the same includes forming a copper alloy line on substrate, an oxidation film formed on the upper surface of the copper alloy line. The copper alloy line includes a concentration y of magnesium, and the copper alloy line has a thickness t. the concentration y of magnesium in copper alloy line is related to the thickness is as follows: y ≤ 94 t .

摘要翻译： 薄膜晶体管及其制造方法包括在基板上形成铜合金线，形成在铜合金线的上表面上的氧化膜。 铜合金线包含镁的浓度y，铜合金线的厚度为t。 铜合金线中镁的浓度y与厚度有关如下：