公开(公告)号：US20090284677A1

公开(公告)日：2009-11-19

申请号：US12318263

申请日：2008-12-23

申请人： Woo Sup Shin ,  Joo Soo Lim ,  Heung Lyul Cho ,  Hee Young Kwack

发明人： Woo Sup Shin ,  Joo Soo Lim ,  Heung Lyul Cho ,  Hee Young Kwack

IPC分类号： G02F1/1368 ,  H01L21/02

CPC分类号： G02F1/134363 ,  G02F2001/13606 ,  G02F2001/136231 ,  G02F2201/124 ,  G02F2201/40 ,  H01L27/124 ,  H01L27/1288

摘要： A liquid crystal display device includes a gate line on a substrate; a data line crossing the gate line with a gate insulating film interposed between the gate line and the data line to define a pixel region; a thin film transistor at the crossing of the gate line and the data line; a pixel electrode connected to the thin film transistor; a common electrode forming a horizontal electric field with the pixel electrode in the pixel region; a gate pad connected to the gate line; and a data pad connected to the data line, wherein the gate pad and the data pad includes a lower pad in the same layer as the gate line and made of the same material as the gate line, a lower contact hole through the gate insulating film to expose the lower pad, an upper pad in the same layer as the data line, made of the same material as the data line, and connected to the lower pad through the lower contact hole, and an upper contact hole through a passivation film protecting the thin film transistor to expose the upper pad, and a semiconductor layer of the thin film transistor overlaps with the gate electrode of the thin film transistor, and has a width smaller than that of a gate electrode of the thin film transistor.

摘要翻译： 液晶显示装置包括在基板上的栅极线; 与栅极线交叉的数据线和插入在栅极线与数据线之间的栅极绝缘膜，以限定像素区域; 栅极线与数据线交叉的薄膜晶体管; 连接到薄膜晶体管的像素电极; 与像素电极在像素区域中形成水平电场的公共电极; 连接到栅极线的栅极焊盘; 以及连接到数据线的数据焊盘，其中栅极焊盘和数据焊盘包括与栅极线相同的层并且由与栅极线相同的材料制成的下焊盘，通过栅极绝缘膜的下部接触孔 以与数据线相同的材料制成的下焊盘，与数据线相同的层中的上焊盘露出，并通过下接触孔连接到下焊盘，以及通过钝化膜保护的上接触孔 所述薄膜晶体管暴露所述上焊盘，所述薄膜晶体管的半导体层与所述薄膜晶体管的栅电极重叠，并且具有比所述薄膜晶体管的栅电极的宽度小的宽度。

公开(公告)号：US07916229B2

公开(公告)日：2011-03-29

申请号：US12318263

申请日：2008-12-23

申请人： Woo Sup Shin ,  Joo Soo Lim ,  Heung Lyul Cho ,  Hee Young Kwack

发明人： Woo Sup Shin ,  Joo Soo Lim ,  Heung Lyul Cho ,  Hee Young Kwack

IPC分类号： G02F1/136 ,  G02F1/1368 ,  G02F1/1343 ,  H01L21/02

CPC分类号： G02F1/134363 ,  G02F2001/13606 ,  G02F2001/136231 ,  G02F2201/124 ,  G02F2201/40 ,  H01L27/124 ,  H01L27/1288

摘要： A liquid crystal display device includes a gate line on a substrate; a data line crossing the gate line with a gate insulating film interposed between the gate line and the data line to define a pixel region; a thin film transistor at the crossing of the gate line and the data line; a pixel electrode connected to the thin film transistor; a common electrode forming a horizontal electric field with the pixel electrode in the pixel region; a gate pad connected to the gate line; and a data pad connected to the data line, wherein the gate pad and the data pad includes a lower pad in the same layer as the gate line and made of the same material as the gate line, a lower contact hole through the gate insulating film to expose the lower pad, an upper pad in the same layer as the data line, made of the same material as the data line, and connected to the lower pad through the lower contact hole, and an upper contact hole through a passivation film protecting the thin film transistor to expose the upper pad, and a semiconductor layer of the thin film transistor overlaps with the gate electrode of the thin film transistor, and has a width smaller than that of a gate electrode of the thin film transistor.

摘要翻译： 液晶显示装置包括在基板上的栅极线; 与栅极线交叉的数据线和插入在栅极线与数据线之间的栅极绝缘膜，以限定像素区域; 栅极线与数据线交叉的薄膜晶体管; 连接到薄膜晶体管的像素电极; 与像素电极在像素区域中形成水平电场的公共电极; 连接到栅极线的栅极焊盘; 以及连接到数据线的数据焊盘，其中栅极焊盘和数据焊盘包括与栅极线相同的层并且由与栅极线相同的材料制成的下焊盘，通过栅极绝缘膜的下部接触孔 以与数据线相同的材料制成的下焊盘，与数据线相同的层中的上焊盘露出，并通过下接触孔连接到下焊盘，以及通过钝化膜保护的上接触孔 所述薄膜晶体管暴露所述上焊盘，所述薄膜晶体管的半导体层与所述薄膜晶体管的栅电极重叠，并且具有比所述薄膜晶体管的栅电极的宽度小的宽度。

公开(公告)号：US08378355B2

公开(公告)日：2013-02-19

申请号：US12966048

申请日：2010-12-13

申请人： Hee Young Kwack ,  Heung Lyul Cho ,  Jeong Yun Lee ,  Jung Ho Son

发明人： Hee Young Kwack ,  Heung Lyul Cho ,  Jeong Yun Lee ,  Jung Ho Son

IPC分类号： H01L29/04

CPC分类号： H01L27/1288 ,  H01L27/0207 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248

摘要： A thin film transistor array substrate including a substrate, a gate line intersecting a data line to define a pixel region on the substrate, a switching element disposed at an intersection of the gate line and the data line, a plurality of pixel electrodes and a plurality of first common electrodes alternately arranged in the pixel region, a second common electrode overlapping the data line and interposed between a gate insulation film and a protective film, a first storage electrode on the substrate, a second storage electrode overlapping the first storage electrode, and an organic insulation film on the switching element, the second storage electrode, the data line, a gate pad, and a data pad, wherein the second common electrode covers the data line, the protective film, the organic insulation film, and the gate insulation film, and has inclined surfaces connected to the surface of the substrate.

摘要翻译： 一种薄膜晶体管阵列基板，包括基板，与数据线交叉以限定基板上的像素区域的栅极线，设置在栅极线和数据线的交点处的开关元件，多个像素电极和多个像素电极 交替布置在像素区域中的第一公共电极，与数据线重叠并插入在栅绝缘膜和保护膜之间的第二公共电极，在基板上的第一存储电极，与第一存储电极重叠的第二存储电极，以及 开关元件上的有机绝缘膜，第二存储电极，数据线，栅极焊盘和数据焊盘，其中第二公共电极覆盖数据线，保护膜，有机绝缘膜和栅极绝缘 并且具有连接到基板的表面的倾斜表面。

公开(公告)号：US07425508B2

公开(公告)日：2008-09-16

申请号：US11292059

申请日：2005-12-02

申请人： Byung Chul Ahn ,  Joo Soo Lim ,  Ji No Lee ,  Hee Young Kwack

发明人： Byung Chul Ahn ,  Joo Soo Lim ,  Ji No Lee ,  Hee Young Kwack

IPC分类号： H01L21/311

CPC分类号： G02F1/136227 ,  G02F2001/136236 ,  Y10S438/942 ,  Y10S438/946

摘要： A liquid crystal display device, including: a gate line on a substrate; a data line crossing the gate line with a gate insulating film therebetween to define a pixel area; a thin film transistor connected to the gate line and the data line; a semiconductor pattern which forms a channel of the thin film transistor and overlaps along the data line; a passivation film covering the data line and the thin film transistor; and a pixel electrode on the gate insulating film in a pixel hole of the pixel area that penetrates the passivation film and connected to the thin film transistor, the pixel electrode on an inclined side surface of the passivation film to encompass the pixel hole, to form a border with the passivation film and having a thickness that decreases as it goes up the side surface of the passivation film.

摘要翻译： 一种液晶显示装置，包括：基板上的栅极线; 在栅极线之间与栅极绝缘膜交叉的数据线，以限定像素区域; 连接到栅极线和数据线的薄膜晶体管; 半导体图案，其形成薄膜晶体管的沟道并沿数据线重叠; 覆盖数据线和薄膜晶体管的钝化膜; 以及像素电极，位于像素区域的穿透钝化膜并连接到薄膜晶体管的像素孔中的像素电极上，像素电极在钝化膜的倾斜侧表面上以包围像素孔，以形成 与钝化膜的边界并且具有随着钝化膜的侧表面上升而减小的厚度。

公开(公告)号：US20100047974A1

公开(公告)日：2010-02-25

申请号：US12544429

申请日：2009-08-20

申请人： Joo Soo Lim ,  Hee Young Kwack

发明人： Joo Soo Lim ,  Hee Young Kwack

IPC分类号： H01L21/336

CPC分类号： H01L27/1288 ,  H01L27/1214

摘要： A simplified method of manufacturing a thin film transistor array substrate is disclosed. The method includes: forming gate electrodes, gate lines and gate pads on a substrate with the use of a first mask; forming a gate insulation film, a semiconductor layer, and a metal layer on the substrate; forming a first photoresist pattern on the metal layer with the use of a second mask; forming first contact holes for the gate pads with the use of the first photoresist pattern; forming a second photoresist pattern, and providing patterns for data pads, data lines, and thin film transistors with the use of the second photoresist pattern; providing a third photoresist pattern, and forming contact holes for source/drain electrodes and second contact holes the gate pads with the use of the third photoresist pattern; forming a protective film on the substrate and providing a fourth photoresist pattern on the protective film with the use of a third mask; forming third contact holes for the gate pads, contact holes for the data pads, gate lines, and drain electrodes, and contact holes for pixel electrodes, with the use of the fourth photoresist pattern; and forming a transparent conduction film on the fourth photoresist pattern having the contact holes.

摘要翻译： 公开了制造薄膜晶体管阵列基板的简化方法。 该方法包括：利用第一掩模在基板上形成栅电极，栅极线和栅极焊盘; 在基板上形成栅极绝缘膜，半导体层和金属层; 使用第二掩模在所述金属层上形成第一光致抗蚀剂图案; 通过使用第一光致抗蚀剂图形形成用于栅极焊盘的第一接触孔; 形成第二光致抗蚀剂图案，并且使用第二光致抗蚀剂图案提供用于数据焊盘，数据线和薄膜晶体管的图案; 提供第三光致抗蚀剂图案，并且使用第三光致抗蚀剂图案形成栅极焊盘的源/漏电极和第二接触孔的接触孔; 在基板上形成保护膜，并使用第三掩模在保护膜上提供第四光致抗蚀剂图案; 使用第四光致抗蚀剂图案，形成用于栅极焊盘的第三接触孔，数据焊盘的接触孔，栅极线和漏极电极以及用于像素电极的接触孔; 以及在具有接触孔的第四光致抗蚀剂图案上形成透明导电膜。

公开(公告)号：US08008139B2

公开(公告)日：2011-08-30

申请号：US12544429

申请日：2009-08-20

申请人： Joo Soo Lim ,  Hee Young Kwack

发明人： Joo Soo Lim ,  Hee Young Kwack

IPC分类号： H01L21/00

CPC分类号： H01L27/1288 ,  H01L27/1214

摘要： A simplified method of manufacturing a thin film transistor array substrate is disclosed. The method includes: forming gate electrodes, gate lines and gate pads on a substrate with the use of a first mask; forming a gate insulation film, a semiconductor layer, and a metal layer on the substrate; forming a first photoresist pattern on the metal layer with the use of a second mask; forming first contact holes for the gate pads with the use of the first photoresist pattern; forming a second photoresist pattern, and providing patterns for data pads, data lines, and thin film transistors with the use of the second photoresist pattern; providing a third photoresist pattern, and forming contact holes for source/drain electrodes and second contact holes the gate pads with the use of the third photoresist pattern; forming a protective film on the substrate and providing a fourth photoresist pattern on the protective film with the use of a third mask; forming third contact holes for the gate pads, contact holes for the data pads, gate lines, and drain electrodes, and contact holes for pixel electrodes, with the use of the fourth photoresist pattern; and forming a transparent conduction film on the fourth photoresist pattern having the contact holes.

摘要翻译： 公开了制造薄膜晶体管阵列基板的简化方法。 该方法包括：利用第一掩模在基板上形成栅电极，栅极线和栅极焊盘; 在基板上形成栅极绝缘膜，半导体层和金属层; 使用第二掩模在所述金属层上形成第一光致抗蚀剂图案; 通过使用第一光致抗蚀剂图形形成用于栅极焊盘的第一接触孔; 形成第二光致抗蚀剂图案，并且使用第二光致抗蚀剂图案提供用于数据焊盘，数据线和薄膜晶体管的图案; 提供第三光致抗蚀剂图案，并且使用第三光致抗蚀剂图案形成栅极焊盘的源/漏电极和第二接触孔的接触孔; 在基板上形成保护膜，并使用第三掩模在保护膜上提供第四光致抗蚀剂图案; 使用第四光致抗蚀剂图案，形成用于栅极焊盘的第三接触孔，数据焊盘的接触孔，栅极线和漏极电极以及用于像素电极的接触孔; 以及在具有接触孔的第四光致抗蚀剂图案上形成透明导电膜。

公开(公告)号：US20070152220A1

公开(公告)日：2007-07-05

申请号：US11643793

申请日：2006-12-22

申请人： Hee Young Kwack

发明人： Hee Young Kwack

IPC分类号： H01L29/04

CPC分类号： G02F1/1362 ,  G02F2001/136236 ,  G02F2001/136295 ,  G02F2201/40 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/78633

摘要： A four-mask process thin film transistor (TFT) array substrate and a method for fabricating the same is disclosed, which prevents a semiconductor tail from being formed. An open area is thus obtained and wavy noise is prevented from occurring. The method of fabricating a TFT array substrate comprises: forming a gate line, a gate electrode and a pad electrode on a substrate; sequentially depositing a gate insulation layer, a silicon layer and a metal layer on an entire surface of the substrate including the gate line; forming an open area in the pad electrode; forming a semiconductor layer, data line and source/drain electrodes by patterning the silicon layer and the metal layer; and forming a pixel electrode connected with the drain electrode and a transparent conductive layer connected with the pad electrode by depositing and patterning a transparent conductive material on the entire surface of the substrate including the data line, and simultaneously defining a channel region by separating the source and drain electrodes from each other.

摘要翻译： 公开了一种四掩模工艺薄膜晶体管（TFT）阵列基板及其制造方法，其防止形成半导体尾部。 由此获得开放区域并防止发生波浪噪声。 制造TFT阵列基板的方法包括：在基板上形成栅极线，栅电极和焊盘电极; 在包括栅极线的基板的整个表面上依次沉积栅极绝缘层，硅层和金属层; 在所述焊盘电极中形成开放区域; 通过图案化硅层和金属层形成半导体层，数据线和源极/漏极; 以及通过在包括所述数据线的所述基板的整个表面上沉积和图案化透明导电材料来形成与所述漏电极连接的像素电极和透明导电层，所述透明导电层与所述焊盘电极连接，并且通过分离所述源 和漏电极。

公开(公告)号：US07518666B2

公开(公告)日：2009-04-14

申请号：US11143657

申请日：2005-06-03

申请人： Tae Yong Jung ,  Ji No Lee ,  Hee Young Kwack

发明人： Tae Yong Jung ,  Ji No Lee ,  Hee Young Kwack

IPC分类号： G02F1/1333

CPC分类号： G02F1/136213 ,  G02F1/136227 ,  G02F2001/136236 ,  H01L27/1255 ,  H01L27/1288

摘要： A TFT substrate having a storage capacitor with an increased capacitance and aperture ratio, and a simplified method of fabricating the same, includes gate and data lines crossing each other to define pixel areas; a gate insulating film between the gate and data lines; TFTs connected to the gate and data lines; a semiconductor pattern defining a channel of the TFTs and overlapped by the data lines; a passivation film covering the data lines and the TFTs; and at least one pixel electrode connected to a TFT and provided within a pixel hole that is arranged within a pixel area. The pixel hole is formed through the passivation film and partially through the gate insulating film. Further, a storage capacitor includes a portion of the pixel electrode that overlaps with an underlying gate line with a portion of the gate insulating film that defines the pixel hole.

摘要翻译： 具有具有增加的电容和开口率的存储电容器的TFT基板及其制造方法简化包括彼此交叉以限定像素区域的栅极和数据线; 栅极和数据线之间的栅极绝缘膜; 连接到门和数据线的TFT; 限定TFT的沟道并由数据线重叠的半导体图案; 覆盖数据线和TFT的钝化膜; 以及连接到TFT并且设置在像素区域内的像素孔内的至少一个像素电极。 像素孔通过钝化膜形成，部分地穿过栅极绝缘膜。 此外，存储电容器包括与限定像素孔的栅极绝缘膜的一部分与下面的栅极线重叠的像素电极的一部分。

公开(公告)号：US07439586B2

公开(公告)日：2008-10-21

申请号：US11143681

申请日：2005-06-03

申请人： Tae Young Jung ,  Ji No Lee ,  Hee Young Kwack

发明人： Tae Young Jung ,  Ji No Lee ,  Hee Young Kwack

IPC分类号： G02F1/1339

CPC分类号： G02F1/1368 ,  G02F2001/133388 ,  G02F2001/136231

摘要： A base thin film transistor (TFT) substrate includes a substrate, array areas on the substrate; at least one dummy area on the substrate and between the array areas; an insulating film on the substrate; at least one aperture through the insulating film and arranged within the at least one dummy area; and at least one post arranged within the at least one aperture.

摘要翻译： 基底薄膜晶体管（TFT）基板包括基板，基板上的阵列区域; 在衬底上和阵列区域之间的至少一个虚拟区域; 基板上的绝缘膜; 穿过所述绝缘膜并且布置在所述至少一个虚拟区域内的至少一个孔; 以及布置在所述至少一个孔内的至少一个柱。

公开(公告)号：US08115893B2

公开(公告)日：2012-02-14

申请号：US12000746

申请日：2007-12-17

申请人： Tae Yong Jung ,  Ji No Lee ,  Hee Young Kwack

发明人： Tae Yong Jung ,  Ji No Lee ,  Hee Young Kwack

IPC分类号： G02F1/1335

CPC分类号： G02F1/133555 ,  G02F1/1362 ,  G02F2001/136231

摘要： A liquid crystal display device includes a first substrate, a second substrate and a liquid crystal layer between the first and second substrates. The liquid crystal display device further includes a gate line on the first substrate, a first insulation film on the gate line, a data line crossing the gate line such that the data line and the gate line define a pixel region with a transmission area and a reflection area, a thin film transistor connected to the gate line and the data line, a storage capacitor including a storage line crossing the data line and an upper storage electrode connected to the thin film transistor, a second insulation film on the thin film transistor with a transmission hole defined through the second insulation film, a reflection electrode disposed on the second insulation film in the reflection area and connected to a portion of the upper storage electrode through the transmission hole, and a pixel electrode disposed in the pixel region and connected to the reflection electrode.

摘要翻译： 液晶显示装置包括第一基板，第二基板和第一基板与第二基板之间的液晶层。 液晶显示装置还包括在第一基板上的栅极线，栅极线上的第一绝缘膜，与栅极线交叉的数据线，使得数据线和栅极线限定具有透射区域的像素区域和 反射区域，连接到栅极线和数据线的薄膜晶体管，包括与数据线交叉的存储线的存储电容器和连接到薄膜晶体管的上部存储电极，在薄膜晶体管上的第二绝缘膜，具有 通过第二绝缘膜限定的透射孔，反射区域中设置在第二绝缘膜上并通过透射孔与上部存储电极的一部分连接的反射电极，以及设置在像素区域中并连接到 反射电极。