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公开(公告)号：US08264296B2
公开(公告)日：2012-09-11
申请号：US12929775
申请日：2011-02-15
申请人： Takashi Matsumoto
发明人： Takashi Matsumoto
IPC分类号： H03B5/32
CPC分类号： H03B5/368 , H03B5/1243
摘要： A voltage controlled oscillator (VCO) securing a wide range of variable amount of oscillatory frequency is provided. In the VCO, a resistor R1 and a capacitor C1 are connected in series on a line of a crystal resonator and a control voltage supply terminal, a cathode of a variable-capacitance diode VD1 is connected between the R1 and the C1, and an anode of the VD1 is grounded. A parallel-connected circuit is disposed between the C1 and a port connected with the crystal resonator, the parallel-connected circuit including a variable-capacitance diode VD2 and a capacitor C3 connected in series, an expansion coil L1, and a Q dump resistor R6 which are connected in parallel. The parallel-connected circuit on an input side is grounded via a resistor R4, and a point between the R1 and the C1 and a point between the VD2 and the C3 are connected via a resistor R5.
摘要翻译： 提供了一种稳定振荡频率范围广泛的压控振荡器（VCO）。 在VCO中，电阻器R1和电容器C1串联连接在晶体谐振器和控制电压端子的一行上，可变电容二极管VD1的阴极连接在R1与C1之间，阳极 的VD1接地。 并联电路设置在C1和与晶体谐振器连接的端口之间，并联电路包括串联连接的可变电容二极管VD2和电容器C3，扩展线圈L1和Q转换电阻器R6 它们并联连接。 输入侧的并联电路通过电阻R4接地，R1与C1之间的点与VD2与C3之间的点通过电阻R5连接。
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公开(公告)号：US08154355B2
公开(公告)日：2012-04-10
申请号：US12654606
申请日：2009-12-24
申请人： Takashi Matsumoto
发明人： Takashi Matsumoto
IPC分类号： H03B5/32
CPC分类号： H03B5/36
摘要： A high-frequency Colpitts circuit having a feedback transistor Q2 in addition to an oscillation transistor Q1 is provided, wherein a collector of the transistor Q1 is connected to a base of the transistor Q2, a supply voltage is applied to a collector of the transistor Q2 through a resistance R5 and is connected to an output terminal, the collector is connected to a base of the transistor Q1 through a feedback resistance Rf, a crystal oscillator and one end of capacitors C1 and C2 connected in series are connected to the base, the other end of the capacitors is grounded, and a point between the capacitors C1 and C2 is connected to an emitter of the transistor Q1 and is grounded through a resistance R4.
摘要翻译： 提供了具有除了振荡晶体管Q1之外的反馈晶体管Q2的高频Colpitts电路，其中晶体管Q1的集电极连接到晶体管Q2的基极，电源电压被施加到晶体管Q2的集电极 通过电阻R5并连接到输出端子，集电极通过反馈电阻Rf连接到晶体管Q1的基极，晶体振荡器和串联连接的电容器C1和C2的一端连接到基极， 电容器的另一端接地，并且电容器C1和C2之间的点连接到晶体管Q1的发射极，并通过电阻R4接地。
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公开(公告)号：US07936156B2
公开(公告)日：2011-05-03
申请号：US12136579
申请日：2008-06-10
IPC分类号： G05F1/40
CPC分类号： H02M3/1588 , Y02B70/1466
摘要： A first power supply line and having a first conductivity type a second transistor coupled between the first transistor and a second power supply line, and having the first conductivity type an output unit driving a first control signal causing the first transistor to become conductive, based on a drive voltage, and outputting the first control signal to the first transistor and a boot strap circuit including a capacitor having a first end coupled to a node of the first transistor and the second transistor and supplying the output unit with the drive voltage based on the capacitor, wherein an electric potential of the first end is reduced before the first transistor becomes conductive.
摘要翻译： 第一电源线并具有第一导电类型，第二晶体管耦合在第一晶体管和第二电源线之间，并且具有第一导电类型，驱动第一控制信号使第一晶体管导通的输出单元基于 驱动电压，并且将第一控制信号输出到第一晶体管，以及引导电路，其包括具有耦合到第一晶体管和第二晶体管的节点的第一端的电容器，并且基于该第一晶体管提供驱动电压 电容器，其中在所述第一晶体管导通之前所述第一端的电位减小。
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公开(公告)号：US20110022232A1
公开(公告)日：2011-01-27
申请号：US12841603
申请日：2010-07-22
IPC分类号： G05B15/00
CPC分类号： B62D57/032
摘要： A control device for a mobile body makes it possible to smoothly correct the deviation of an actual posture of a base body of a mobile body, which travels with the base body thereof moving up and down, from a desired posture of the base body while restraining an overshoot or an undershoot from occurring. To determine a required manipulated variable according to a feedback control law in order to converge a state amount deviation related to the posture of the base body of the mobile body to zero, the feedback gain of the feedback control law is determined by using the time series in a period from current time to predetermined time in the future in the time series of a desired inertial force of the mobile body or the base body. The required manipulated variable is determined by the calculation of the feedback control law on the basis of the determined feedback gain and an observed value of the state amount deviation.
摘要翻译： 用于移动体的控制装置使得可以平滑地校正移动体的基体的实际姿态与基体的所需姿势同时上下移动的基体的偏离，同时抑制 发生过冲或下冲。 为了将与移动体的基体的状态相关的状态量偏差收敛到零，根据反馈控制律确定所需的操作变量，反馈控制律的反馈增益通过使用时间序列 在从移动体或基体的期望的惯性力的时间序列中的从现在到现在的时间到预定时间的期间。 所需的操纵变量通过基于确定的反馈增益和状态量偏差的观测值的反馈控制律的计算来确定。
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95.发明授权公开(公告)号：US07750303B2
公开(公告)日：2010-07-06
申请号：US11355136
申请日：2006-02-16
申请人： Yuuichirou Ueno , Kensuke Amemiya , Norihito Yanagita , Takafumi Ishitsu , Tomoyuki Seino , Takashi Matsumoto , Shinobu Irikura
发明人： Yuuichirou Ueno , Kensuke Amemiya , Norihito Yanagita , Takafumi Ishitsu , Tomoyuki Seino , Takashi Matsumoto , Shinobu Irikura
CPC分类号： G01T1/2985
摘要： A positron emission tomography apparatus installs a plurality of detector units in the circumference of a bed. The detector unit installs a plurality of combined substrates including detectors, analogue ASICs, and a digital ASIC and a voltage adjustment device inside a housing. A partition plate installed inside the housing separates the region inside the housing into a first region installed with the combined substrates and a second region installed with the voltage adjustment device. The partition plate blocks noise generated in the voltage adjustment device so as not to affect γ-ray detection signals outputted from the detectors, thereby preventing the effect of the noise generated in the voltage adjustment device toward γ-ray detection signals and shortening the examination time.
摘要翻译： 正电子发射断层摄影装置在床的周围安装多个检测器单元。 检测器单元将包括检测器，模拟ASIC以及数字ASIC和电压调节装置的多个组合基板安装在壳体内。 安装在壳体内部的隔板将壳体内的区域分离成安装有组合基板的第一区域和安装有电压调节装置的第二区域。 分隔板阻止在电压调节装置中产生的噪声，从而不影响从检测器输出的γ射线检测信号，从而防止电压调节装置中产生的噪声对γ射线检测信号的影响，缩短检查时间 。
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公开(公告)号：US07664572B2
公开(公告)日：2010-02-16
申请号：US10512231
申请日：2003-04-28
IPC分类号： G05B19/18 , G06F19/00 , G05B19/408
CPC分类号： B62D57/032
摘要： A control device of a legged mobile robot, wherein a state amount error (for example, an error of a vertical position of a body 3), which is a difference between an actual state amount and a state amount of a desired gait related to a translational motion in a predetermined direction (for example, a translational motion in a vertical direction) of a legged mobile robot 1, is determined, and then a desired motion of the desired gait is determined such that the state amount error approaches zero. The desired motion is determined using a dynamic model by additionally inputting a virtual external force determined on the basis of the state amount error to the dynamic model for generating desired gaits. At the same time, a desired floor reaction force of the robot 1 is corrected on the basis of a state amount error of zero, and compliance control is carried out to make the motion and the floor reaction force of the robot 1 follow the desired motion and the desired floor reaction force of the desired gait.
摘要翻译： 一种有腿式移动机器人的控制装置，其中，状态量误差（例如，主体3的垂直位置的误差）是与实际状态量和期望步态的状态量之间的差异 确定有腿可移动机器人1的预定方向（例如，垂直方向的平移运动）的平移运动，然后确定所需步态的期望运动，使得状态量误差接近零。 使用动态模型通过将基于状态量误差确定的虚拟外力输入到用于产生期望步态的动态模型来确定期望的运动。 同时，基于零的状态量误差来校正机器人1的期望的地板反作用力，并且执行顺从性控制以使机器人1的运动和地面反作用力遵循所需的运动 和期望的步态的期望的地板反作用力。
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公开(公告)号：US07606634B2
公开(公告)日：2009-10-20
申请号：US10596055
申请日：2004-11-29
IPC分类号： G05B15/00
CPC分类号： B25J13/085 , B62D57/032
摘要： Ground contact portions 10 are classified into a tree structure such that each of the ground contact portions 10 of a mobile body 1 (mobile robot) equipped with three or more ground contact portions 10 becomes a leaf node and that an intermediate node exists between the leaf node and a root node having all the leaf nodes as its descendant nodes. On each node (a C-th node) having child nodes, the correction amounts of the desired relative heights of the ground contact portions 10 of the C-th node are determined such that the relative relationship among the actual node floor reaction forces of the child nodes of the C-th node approximates the relative relationship among the desired node floor reaction forces of the child nodes of the C-th node, and joints of the mobile body 1 are operated so that a desired relative height obtained by combining the correction amounts is satisfied.
摘要翻译： 接地部分10分为树结构，使得配备有三个或更多个接地部分10的移动体1（移动机器人）的每个接地接触部分10成为叶节点，并且中间节点存在于叶片之间 节点和具有所有叶节点作为其后代节点的根节点。 在具有子节点的每个节点（第C个节点）上，确定第C个节点的接地部分10的期望相对高度的校正量，使得第C节点的实际节点楼层反作用力之间的相对关系 第C节点的子节点近似于第C节点的子节点的期望节点楼层反作用力之间的相对关系，并且操作移动体1的关节，使得通过组合校正而获得的期望相对高度 金额满意
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公开(公告)号：US07603234B2
公开(公告)日：2009-10-13
申请号：US10562327
申请日：2004-06-28
IPC分类号： G06F19/00
CPC分类号： B62D57/032
摘要： The occurrence of a slippage of a robot in operation, following a desired gait, is determined, and the permissible range of a restriction object amount, such as a floor reaction force horizontal component or a floor reaction force moment vertical component to be applied to the robot, is variably set according to a slippage determination result. A provisional motion of a desired gait is determined using a dynamic model, and if the restriction object amount defined by the provisional motion deviates from the permissible range, then the motion of a desired gait is determined by correcting the provisional motion by changing the changing rate of the angular momentum of the robot from the provisional motion so as to limit the restriction object amount to the permissible range, while satisfying a dynamic balance condition.
摘要翻译： 确定在期望的步态之后操作的机器人的滑动的发生，并且将限制对象量的允许范围，例如地板反作用力水平分量或地板反作用力矩垂直分量施加到 机器人，根据滑动判定结果可变地设定。 使用动态模型确定期望步态的临时运动，并且如果由临时动作限定的限制对象量偏离允许范围，则通过改变变化率来校正临时动作来确定期望步态的运动 的机器人的角动量从临时动作开始，以将限制对象量限制在允许范围内，同时满足动态平衡条件。
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公开(公告)号：US20090142919A1
公开(公告)日：2009-06-04
申请号：US12320357
申请日：2009-01-23
IPC分类号： H01L21/768
CPC分类号： H01L21/7682 , H01L21/76811 , H01L21/76832 , H01L21/76834 , H01L21/76843
摘要： In a semiconductor device, capacitance between copper interconnections is decreased and the insulation breakdown is improved simultaneously, and a countermeasure is taken for misalignment via by a manufacturing method including the steps of forming an interconnection containing copper as a main ingredient in an insulative film above a substrate, forming insulative films and a barrier insulative film for a reservoir pattern, forming an insulative film capable of suppressing or preventing copper from diffusing on the upper surface and on the lateral surface of the interconnection and above the insulative film and the insulative film, forming insulative films of low dielectric constant, in which the insulative film is formed such that the deposition rate above the opposing lateral surfaces of the interconnections is larger than the deposition rate therebelow to form an air gap between the adjacent interconnections and, finally, planarizing the insulative film by interlayer CMP.
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公开(公告)号：US07501347B2
公开(公告)日：2009-03-10
申请号：US11446137
申请日：2006-06-05
IPC分类号： H01L21/311
CPC分类号： H01L21/7682 , H01L21/76811 , H01L21/76832 , H01L21/76834 , H01L21/76843
摘要： In a semiconductor device, capacitance between copper interconnections is decreased and the insulation breakdown is improved simultaneously, and a countermeasure is taken for misalignment via by a manufacturing method including the steps of forming an interconnection containing copper as a main ingredient in an insulative film above a substrate, forming insulative films and a barrier insulative film for a reservoir pattern, forming an insulative film capable of suppressing or preventing copper from diffusing on the upper surface and on the lateral surface of the interconnection and above the insulative film and the insulative film, forming insulative films of low dielectric constant, in which the insulative film is formed such that the deposition rate above the opposing lateral surfaces of the interconnections is larger than the deposition rate therebelow to form an air gap between the adjacent interconnections and, finally, planarizing the insulative film by interlayer CMP.
摘要翻译： 在半导体器件中，铜互连之间的电容降低，并且同时提高绝缘击穿，并且通过包括以下步骤的制造方法采取不对准的对策：包括在绝缘膜上方形成包含铜作为主要成分的互连 基板，形成绝缘膜和用于储存器图案的隔离绝缘膜，形成能够抑制或防止铜在互连的上表面和侧表面上以及在绝缘膜和绝缘膜上方形成的绝缘膜，形成 绝缘膜的绝缘膜形成为使得相互连接的相对侧面上方的沉积速率大于其下方的沉积速率，以形成相邻互连之间的气隙，最后将绝缘膜平坦化 膜层间CMP。
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