公开(公告)号：US20030183840A1

公开(公告)日：2003-10-02

申请号：US10410182

申请日：2003-04-10

发明人： Jules D. Levine ,  Ross LaRue ,  Stanley Freske ,  Thomas Holden

IPC分类号： H01L029/74

CPC分类号： H01L23/66 ,  H01L25/0655 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/87 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01P1/15 ,  H04Q2213/1301 ,  H04Q2213/1302 ,  H04Q2213/1304 ,  H04Q2213/13305 ,  H01L2924/00

摘要： An apparatus for switching microwave signals includes a plurality of input lines, a plurality of output lines; and a plurality of thyristors. Each thyristor has a lower conducting surface that is electrically connected to one of the input lines and an upper conducting surface that is electrically connected to one of the output lines. A selected thyristor transmits a microwave signal between a selected input line and a selected output line in an ON state and blocks the microwave signal between the selected input line and the selected output line in an OFF state.

公开(公告)号：US06586786B2

公开(公告)日：2003-07-01

申请号：US10032856

申请日：2001-12-27

申请人： Shoichi Kitazawa ,  Masaharu Tanaka ,  Toshio Ishizaki ,  Toru Yamada

发明人： Shoichi Kitazawa ,  Masaharu Tanaka ,  Toshio Ishizaki ,  Toru Yamada

IPC分类号： H01L2980

CPC分类号： H01P1/15 ,  H01L2924/0002 ,  H01L2924/00

摘要： A high frequency switch, has a transmitting terminal; a receiving terminal; an antenna terminal; a first diode having an anode electrically connected to the transmitting terminal and a cathode electrically connected to the antenna terminal; a second diode having an anode connected through a transmission line of ¼ wavelength to the antenna terminal which is electrically connected to the receiving terminal, and having the side of a cathode grounded; and a control terminal provided to a node between the transmitting terminal and the first anode, wherein the first and second diodes have a tradeoff relationship between ON resistance thereof and capacitance between the anode and the cathode, and the ON resistance of the first diode is lower than the ON resistance of the second diode, and the capacitance of the second diode in the OFF state is smaller than the capacitance of the first diode in the OFF state.

摘要翻译： 高频开关，发射端子，接收端子，天线端子，第一二极管，具有与发射端子电连接的阳极和与天线端子电连接的阴极;第二二极管，具有通过传输线连接的阳极 对天线端子的1/4波长，电连接到接收端子，并且阴极侧接地; 以及提供给发送端子和第一阳极之间的节点的控制端子，其中第一和第二二极管在其导通电阻和阳极和阴极之间的电容之间具有折衷关系，并且第一二极管的导通电阻低于 第二二极管的导通电阻和第二二极管在OFF状态下的电容小于第一二极管在OFF状态下的电容。

公开(公告)号：US20030090313A1

公开(公告)日：2003-05-15

申请号：US10267531

申请日：2002-10-08

发明人： Mark L. Burgener ,  James S. Cable

IPC分类号： H03K017/62

CPC分类号： H03K17/6871 ,  H01P1/15 ,  H03K17/063 ,  H03K17/102 ,  H03K17/693 ,  H03K19/018521 ,  H03K19/0944 ,  H03K2017/0803 ,  H04B1/40

摘要： A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW_). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a nullstackednull or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level shifting, voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.

摘要翻译： 描述了用于切换RF信号的新型RF开关电路和方法。 RF开关电路采用绝缘体上硅（SOI）技术制造。 RF开关包括用于交替地将RF输入信号耦合到公共RF节点的成对的开关和分流晶体管组。 开关和分流晶体管分组对由开关控制电压（SW）及其反相（SW_）控制。 开关和分流晶体管组包括以“堆叠”或串联配置连接在一起的一个或多个MOSFET晶体管。 晶体管分组器件和相关的栅极电阻器的堆叠增加了串联连接的开关晶体管上的击穿电压，并且操作以改善RF开关压缩。 描述了完全集成的RF开关，其包括与RF开关元件集成在一起的数字控制逻辑和负电压发生器。 在一个实施例中，完全集成的RF开关包括内置振荡器，电荷泵电路，CMOS逻辑电路，电平转换和分压器电路以及RF缓冲电路。 描述了电荷泵，电平转换，分压器和RF缓冲电路的几个实施例。 本发明的RF开关提供插入损耗，开关隔离和开关压缩方面的改进。

公开(公告)号：US20030075743A1

公开(公告)日：2003-04-24

申请号：US10270109

申请日：2002-10-15

发明人： Jules D. Levine ,  Ross A. La Rue ,  Daniel Curcio ,  Timothy Boles ,  Joel Goodrich ,  David Hoag ,  Noyan Kinayman

IPC分类号： H01L029/80

CPC分类号： H01L23/5225 ,  H01L27/1027 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01P1/15 ,  H01L2924/00

摘要： A method and apparatus are disclosed for reducing crosstalk and dispersion in a crosspoint monolithic microwave integrated circuit (MMIC) switch array operating in a range between DC and microwave frequencies. In accordance with an exemplary embodiment, the crosspoint MMIC switch array includes a dielectric stack, a substrate, a first ground plane, a plurality of thyristor switches, a plurality of signal transmission lines arranged in rows; and a plurality of signal transmission lines arranged in columns. The plurality of signal transmission lines arranged in columns intersect the plurality of signal transmission lines arranged in rows at a plurality of intersection points. Each of the plurality of thyristor switches is associated with one of the plurality of intersection points. Each of the plurality of thyristor switches is in electrical contact with the signal transmission lines that intersect at the associated intersection point.

摘要翻译： 公开了一种用于减少在DC和微波频率之间的范围内工作的交叉点单片微波集成电路（MMIC）开关阵列中的串扰和色散的方法和装置。 根据示例性实施例，交叉点MMIC开关阵列包括电介质堆叠，衬底，第一接地平面，多个晶闸管开关，排列成行的多个信号传输线; 以及以列列排列的多个信号传输线。 布置在列中的多个信号传输线与在多个交点处排列成行的多个信号传输线交叉。 多个晶闸管开关中的每一个与多个交点中的一个相关联。 多个晶闸管开关中的每一个与在相关联的交叉点相交的信号传输线电接触。

公开(公告)号：US06534725B2

公开(公告)日：2003-03-18

申请号：US09873191

申请日：2001-06-05

申请人： Yoshihiro Tsukahara

发明人： Yoshihiro Tsukahara

IPC分类号： H05K706

CPC分类号： H01P1/15 ,  H01L23/66 ,  H01L24/81 ,  H01L2223/6627 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2924/01057 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12034 ,  H01L2924/14 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/00

摘要： A high-frequency switch includes: a high-frequency circuit board including an MIC substrate, a microstrip line disposed on a front surface of the MIC substrate, and a signal wiring layer and a front surface grounding conductor disposed along the microstrip line; bumps disposed on the microstrip line, the signal wiring layer, and the front surface grounding conductor; and a semiconductor chip disposed on the high-frequency circuit board through the bumps. A gate electrode of a transistor of the semiconductor chip is connected to the signal wiring layer of the high-frequency circuit board through at least one of the bumps; a source electrode is connected to the front surface grounding conductor through at least one of the bumps; and a drain electrode is connected to the microstrip line through at least one of the bumps.

摘要翻译： 一种高频开关包括：高频电路板，包括MIC基板，设置在MIC基板的前表面上的微带线，以及沿着微带线设置的信号布线层和前表面接地导体; 布置在微带线上的凸起，信号布线层和前表面接地导体; 以及通过凸块设置在高频电路板上的半导体芯片。 半导体芯片的晶体管的栅电极通过至少一个凸块连接到高频电路板的信号布线层; 源电极通过至少一个凸块连接到前表面接地导体; 并且漏极通过至少一个凸块连接到微带线。

公开(公告)号：US20020123313A1

公开(公告)日：2002-09-05

申请号：US10085412

申请日：2002-02-27

申请人： NGK SPARK PLUG CO., LTD.

发明人： Toshitaka Hayakawa ,  Daisuke Kato

IPC分类号： H01Q011/12

CPC分类号： H05K1/165 ,  H01P1/15 ,  H05K1/0233 ,  H05K1/0237 ,  H05K1/181 ,  H05K3/4611 ,  H05K2201/1003

摘要： A high frequency circuit board comprising: a choke coil circuit element of a high frequency switching circuit; a dielectric laminated structure body comprising a plurality of dielectric layers which comprise a first dielectric layer and a second dielectric layer; a land formed on the first dielectric layer; and a circuit pattern formed on the second dielectric layer, wherein the choke coil circuit element is mounted on the land as a chip inductor, the first dielectric layer is located at the end of the body, the second dielectric layer is located nearest to the first board in at least one of the dielectric layers on which a circuit pattern is formed, and the land is positioned out of a region formed by projecting the circuit pattern formed on the second dielectric layer in the direction of laminating of the plurality of dielectric layers.

摘要翻译： 一种高频电路板，包括：高频开关电路的扼流线圈电路元件; 电介质层叠结构体，其包括多个电介质层，所述电介质层包括第一电介质层和第二介电层; 形成在第一电介质层上的焊盘; 以及形成在所述第二电介质层上的电路图案，其中所述扼流线圈电路元件作为芯片电感器安装在所述焊盘上，所述第一电介质层位于所述主体的端部，所述第二电介质层位于最靠近所述第一电介质层 在形成有电路图案的电介质层中的至少一个的基板上，并且所述焊盘位于通过在形成于所述第二电介质层上的所述电路图案沿所述多个电介质层的层叠方向突出而形成的区域之外。

公开(公告)号：US20020060615A1

公开(公告)日：2002-05-23

申请号：US09989528

申请日：2001-11-21

发明人： Walter Kodim

IPC分类号： H01P001/10 ,  H01P005/18

CPC分类号： H01P1/15

摘要： An R.F. antenna switch (102) for coupling either a high-loss port (112) or a low-loss port (114) to a common port (110) includes an unequal power splitter (104) with the high-loss port (112), the low-loss port (114), and the common port (110). The unequal power splitter (104) further has at least one high-loss path (120) coupled between the common port (110) and the high-loss port (112) and a low-loss path (122) coupled between the common port (110) and the low-loss port (114). The R.F. antenna switch (102) further comprises a switching element (106) having an input (106A) coupled to the low-loss port (114) and an output (106B) coupled to a terminating element (108). The low-loss port (114) is terminated with the characteristic impedance of the unequal power splitter (104) when the switching element (106) is switched on.

摘要翻译： 一个R.F. 用于将高损耗端口（112）或低损耗端口（114）耦合到公共端口（110）的天线开关（102）包括具有高损耗端口（112）的不等功率分配器（104） 低损耗端口（114）和公共端口（110）。 不等功率分配器（104）还具有耦合在公共端口（110）和高损耗端口（112）之间的至少一个高损耗路径（120）和耦合在公共端口（110）之间的低损耗路径（122） （110）和低损耗端口（114）。 R.F. 天线开关（102）还包括具有耦合到低损耗端口（114）的输入端（106A）和耦合到端接元件（108）的输出端（106B）的开关元件（106）。 当开关元件（106）接通时，低损耗端口（114）被不等功率分配器（104）的特性阻抗端接。

公开(公告)号：US20020034934A1

公开(公告)日：2002-03-21

申请号：US09824361

申请日：2001-04-02

发明人： Takahiro Watanabe ,  Norio Yoshida ,  Tomonori Ito

IPC分类号： H04B001/26

CPC分类号： H01P1/15

摘要： A high-frequency module includes first to fifth terminals, a high-pass filter, a high-frequency switch, a transmitter-side balun, and a receiver-side balun. The high-pass filter is connected to the high-frequency switch, and the high-frequency switch is also connected to the transmitter-side balun and to the receiver-side balun. The first terminal is connected to an antenna, the second and third terminals are connected to a transmitter circuit, and the fourth and fifth terminals are connected to a receiver circuit.

摘要翻译： 高频模块包括第一至第五端子，高通滤波器，高频开关，发射器侧平衡 - 不平衡转换器和接收器侧平衡 - 不平衡转换器。 高通滤波器连接到高频开关，高频开关也连接到发射机侧平衡 - 不平衡转换器和接收器侧平衡 - 不平衡转换器。 第一端子连接到天线，第二和第三端子连接到发射器电路，第四和第五端子连接到接收器电路。

公开(公告)号：US06332071B1

公开(公告)日：2001-12-18

申请号：US09287564

申请日：1999-04-06

申请人： Per-Olof Brandt

发明人： Per-Olof Brandt

IPC分类号： H04B144

CPC分类号： H04B1/48 ,  H01P1/15

摘要： An antenna switch includes at least one signal path, including an amplifier device and a switch. The amplifier device includes an amplifier connected to a first inductor and to a first capacitor, which is grounded. The amplifier is voltage supplied via a second inductor. The switch includes a receiving isolation device, which is connected to a bypass capacitor connected to an antenna via a low pass filter. A first microstrip is connected to the bypass capacitor and to a DC switch. The first inductor and the first capacitor together with a shorted output transistor of the amplifier form a high impedance in receiving mode, thereby not affecting the receiving signal. The receiving isolation device is a signal wire.

摘要翻译： 天线开关包括至少一个包括放大器装置和开关的信号路径。 放大器装置包括连接到第一电感器的放大器和接地的第一电容器。 放大器是通过第二个电感提供的电压。 开关包括接收隔离装置，其经由低通滤波器连接到连接到天线的旁路电容器。 第一个微带线连接到旁路电容器和直流开关。 第一电感器和第一电容器与放大器的短路输出晶体管一起在接收模式下形成高阻抗，从而不影响接收信号。 接收隔离装置是信号线。

公开(公告)号：US06201455B1

公开(公告)日：2001-03-13

申请号：US09247911

申请日：1999-02-11

申请人： Shigeo Kusunoki

发明人： Shigeo Kusunoki

IPC分类号： H01P110

CPC分类号： H04B1/44 ,  H01P1/15

摘要： An antenna switch circuit which suppresses production of a cross modulation distortion includes an input terminal and an output terminal, a field effect transistor connected at a first one of a source electrode and a drain electrode thereof to the input terminal and connected at a second one of the source electrode and the drain electrode to the output terminal, a first controlling power supply to which the drain electrode and the source electrode of the field effect transistor are connected through first and second biasing elements, respectively, a second controlling power supply to which a gate electrode of the field effect transistor is connected through a third biasing element, and a phase shifting element and a feedback resistor connected in series between the second electrode and the gate electrode of the field effect transistor. The field effect transistor is controlled between on and off by varying a voltage of at least one of the first and second controlling power supplies.

摘要翻译： 抑制交叉调制失真的产生的天线切换电路包括：输入端子和输出端子;场效应晶体管，其在源电极和漏电极的第一方连接到输入端子，并连接在第二 源电极和漏电极分别连接到第一控制电源，第一控制电源，场效应晶体管的漏电极和源电极分别通过第一和第二偏置元件连接到第二控制电源， 场效应晶体管的栅电极通过第三偏置元件连接，并且相移元件和反馈电阻串联连接在场效应晶体管的第二电极和栅电极之间。 场效应晶体管通过改变第一和第二控制电源中的至少一个的电压而被控制在导通和截止之间。