摘要:
A cleaning apparatus is generally composed of a suction unit provided with a suction source, a suction nozzle equipped with a suction port adapted to suck dust or like from a surface to be cleaned, a suction hose connected at one end to the suction nozzle and connected at another end to the suction unit, a low-center-of-gravity support member provided for the suction hose so as to serve as a fulcrum when the suction hose is bent and deformed, a wire member supported at a distal end by the suction nozzle and arranged along the suction hose, and a control unit used to bend and deform the suction hose by manipulating the wire member with the low-center-of-gravity support member serving as a fulcrum. This cleaning apparatus is specifically usable for a bottom surface of a reactor pressure vessel.
摘要:
Systems and methods for exposing semiconductor workpieces to vapors for through-hole cleaning and/or other processes are disclosed. A representative method includes exposing a semiconductor workpiece to a vapor, with the semiconductor workpiece having an opening extending from a first surface of the workpiece through the workpiece to a second surface facing opposite from the first surface. The opening can include a contaminant, and the method can further include drawing the vapor and the contaminant through at least a portion of the opening and away from the second surface of the semiconductor workpiece.
摘要:
A substrate cleaning apparatus includes: a substrate entering guide unit for entering a substrate from outside in a proper direction; a foreign material removing unit for receiving the substrate from the substrate entering guide unit and removing debris formed on the substrate; a foreign material cleaning unit for receiving the substrate from the foreign material removing unit and cleaning to remove debris remaining on the substrate; and a position controller for controlling the position of the substrate carried out of the foreign material cleaning unit, wherein the foreign material cleaning unit includes: a manifold including a plurality of deionized water holes, suction holes and air holes; and a porous cleaning plate combined to the manifold by an upper fastening screw including a through hole communicating with the plurality of deionized water holes and suction holes.
摘要:
A method of drying a substrate comprises: supplying a first air flow 4 downwardly in an inclined direction onto the substrate; supplying a second air flow 5 upwardly in an inclined direction onto the substrate, while moving relatively the substrate and the upper and lower blowing portions so that the substrate, from the end area as a front of the substrate, passes between the upper blowing portion and the lower blowing portion; and controlling the first and second air flows such that a velocity component of the second air flow in an upward direction perpendicular to the virtual plane is smaller than a velocity component of the first air flow in a downward direction perpendicular to the virtual plane.
摘要:
A method for cleaning a filtering membrane, contaminated by contaminants including inorganic and organic materials during a fluid-filtering process, is disclosed, the method comprises cleaning the filtering membrane by using a first cleaning solution of pH 6˜9 so as to remove the organic material from the filtering membrane; and cleaning the filtering membrane by using a second acid cleaning solution so as to remove the inorganic material from the filtering membrane, wherein the cleaning method of the present invention uses the first cleaning solution having pH 6˜9 instead of a strong-alkaline cleaning solution so as to prevent the filtering membrane from being damaged, and also uses the cleaning solution maintained at a relatively low temperature instead of hot water so as to improve economical efficiency by reduction of energy consumption.
摘要:
With the device (1) according to the invention for blowing off impurities on bottle bottoms, in particular bottle inspection machines, a solution is to be created which makes it possible to achieve an optimum blow-off result at comparatively lower air volume flows. This is achieved according to the invention in that beneath the nozzle head (3) in the annular body (5) a channel (6) is provided, which is connected to a compressed air line (7), which in turn is linked to the compressed air feed line (9), wherein the channel (6) in the upper edge pointing to the nozzle head (3) forms an annular gap (14)—triggering the Venturi effect.
摘要:
A dishwasher with a closed loop condenser having a moist air conduit, a dry air conduit having a portion in overlying relationship with a portion of the moist air conduit, wherein the overlying portions of the moist air conduit and the dry air conduit form a heat exchanger, and a controllable gate for selectively introducing, exhausting, or redirecting air relative to the condenser.
摘要:
An apparatus and method for cleaning a surface. The apparatus includes a frame having wheels and a handle extending outwardly therefrom. A disc plate assembly is mounted on the frame for rotation about a first vertical axis and a nozzle assembly is mounted on the disc plate assembly for rotation about a second vertical axis. The disc plate assembly is rotated at a lower speed than the nozzle assembly. Separate pneumatically-operable motors drive the wheels, the disc plate assembly and nozzle assembly. A skirt extends downwardly from the frame and outwardly from nozzles on the nozzle assembly. The nozzles may be raised or lowered relative to the surface to be cleaned. Fluid is delivered from a fluid source to the nozzles and a vacuum port is provided on the frame to enable dirty fluid to be removed from a chamber bounded by the skirt.
摘要:
Embodiments of the invention include methods for in-situ chamber dry cleaning a plasma processing chamber utilized for gate structure fabrication process in semiconductor devices. In one embodiment, a method for in-situ chamber dry clean includes supplying a first cleaning gas including at least a boron containing gas into a processing chamber in absence of a substrate disposed therein, supplying a second cleaning gas including at least a halogen containing gas into the processing chamber in absence of the substrate, and supplying a third cleaning gas including at least an oxygen containing gas into the processing chamber in absence of the substrate.
摘要:
Embodiments of the invention include methods for in-situ chamber dry cleaning a plasma processing chamber utilized for photomask plasma fabrication process. In one embodiment, a method for in-situ chamber dry clean after photomask plasma etching includes performing an in-situ pre-cleaning process in a plasma processing chamber, supplying a pre-cleaning gas mixture including at least an oxygen containing gas into the plasma processing chamber while performing the in-situ pre-cleaning process, providing a substrate into the plasma processing chamber, performing an etching process on the substrate, removing the substrate from the substrate, and performing an in-situ post cleaning process by flowing a post cleaning gas mixture including at least an oxygen containing gas into the plasma processing chamber.