MOSFET with asymmetrical extension implant
    101.
    发明授权
    MOSFET with asymmetrical extension implant 有权
    具有不对称延伸植入物的MOSFET

    公开(公告)号:US08193592B2

    公开(公告)日:2012-06-05

    申请号:US12904662

    申请日:2010-10-14

    Abstract: A method for fabricating a MOSFET (e.g., a PMOS FET) includes providing a semiconductor substrate having surface characterized by a (110) surface orientation or (110) sidewall surfaces, forming a gate structure on the surface, and forming a source extension and a drain extension in the semiconductor substrate asymmetrically positioned with respect to the gate structure. An ion implantation process is performed at a non-zero tilt angle. At least one spacer and the gate electrode mask a portion of the surface during the ion implantation process such that the source extension and drain extension are asymmetrically positioned with respect to the gate structure by an asymmetry measure.

    Abstract translation: 一种用于制造MOSFET(例如,PMOS FET)的方法包括提供具有由(110)表面取向或(110)侧壁表面表征的表面的半导体衬底,在表面上形成栅极结构,并形成源延伸和 半导体衬底中的漏极延伸部相对于栅极结构非对称地定位。 以非零倾角进行离子注入工艺。 在离子注入过程期间,至少一个间隔物和栅电极掩盖表面的一部分,使得源极延伸和漏极延伸通过不对称度量相对于栅极结构不对称地定位。

    SEMICONDUCTOR DEVICE FABRICATION METHOD FOR IMPROVED ISOLATION REGIONS AND DEFECT-FREE ACTIVE SEMICONDUCTOR MATERIAL
    103.
    发明申请
    SEMICONDUCTOR DEVICE FABRICATION METHOD FOR IMPROVED ISOLATION REGIONS AND DEFECT-FREE ACTIVE SEMICONDUCTOR MATERIAL 有权
    用于改进隔离区和无缺陷活性半导体材料的半导体器件制造方法

    公开(公告)号:US20120094466A1

    公开(公告)日:2012-04-19

    申请号:US12905805

    申请日:2010-10-15

    Inventor: Man Fai NG Bin YANG

    Abstract: A fabrication method for a semiconductor device structure is provided. The device structure has a layer of silicon and a layer of silicon dioxide overlying the layer of silicon, and the method begins by forming an isolation recess by removing a portion of the silicon dioxide and a portion of the silicon. The isolation recess is filled with stress-inducing silicon nitride and, thereafter, the silicon dioxide is removed such that the stress-inducing silicon nitride protrudes above the silicon. Next, the exposed silicon is thermally oxidized to form silicon dioxide hardmask material overlying the silicon. Thereafter, a first portion of the silicon dioxide hardmask material is removed to reveal an accessible surface of the silicon, while leaving a second portion of the silicon dioxide hardmask material intact. Next, silicon germanium is epitaxially grown from the accessible surface of the silicon.

    Abstract translation: 提供了半导体器件结构的制造方法。 器件结构具有硅层和覆盖硅层的二氧化硅层,并且该方法开始于通过去除一部分二氧化硅和一部分硅来形成隔离凹槽。 隔离凹部填充有应力诱导性氮化硅,然后去除二氧化硅,使得应力诱导性氮化硅突出于硅上方。 接下来,暴露的硅被热氧化以形成覆盖在硅上的二氧化硅硬掩模材料。 此后,去除二氧化硅硬掩模材料的第一部分以露出硅的可接近表面,同时留下二氧化硅硬掩模材料的第二部分完好无损。 接下来,从硅的可接近表面外延生长硅锗。

    ELECTRONIC APPARATUS HAVING AUXILIARY LIGHTING FOR ILLUMINATION
    110.
    发明申请
    ELECTRONIC APPARATUS HAVING AUXILIARY LIGHTING FOR ILLUMINATION 失效
    具有辅助照明的电子装置用于照明

    公开(公告)号:US20110261522A1

    公开(公告)日:2011-10-27

    申请号:US12815412

    申请日:2010-06-15

    Abstract: An electronic apparatus includes a mainframe with a keyboard embedded therein, a mounting frame pivotally connected with the mainframe, a display screen mounted in the mounting frame, a lighting source disposed on the mounting frame, and an optical element cooperating with the lighting source and slideably mounted on the mounting frame. Light from the lighting source is projected to different predetermined areas by adjusting positions of the optical element relative to the lighting source. In each of the positions of the optical element, the light from the lighting source is modulated by a corresponding portion of the optical element to be projected to a corresponding predetermined area.

    Abstract translation: 一种电子设备,包括嵌入其中的键盘的主机,与主机枢转地连接的安装框架,安装在安装框架中的显示屏,设置在安装框架上的照明源,以及与照明源协作的光学元件,并且可滑动地 安装在安装架上。 通过调整光学元件相对于照明源的位置,将来自照明源的光投射到不同的预定区域。 在光学元件的每个位置,来自光源的光被光学元件的相应部分调制以投影到相应的预定区域。

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