Abstract:
A method for fabricating a MOSFET (e.g., a PMOS FET) includes providing a semiconductor substrate having surface characterized by a (110) surface orientation or (110) sidewall surfaces, forming a gate structure on the surface, and forming a source extension and a drain extension in the semiconductor substrate asymmetrically positioned with respect to the gate structure. An ion implantation process is performed at a non-zero tilt angle. At least one spacer and the gate electrode mask a portion of the surface during the ion implantation process such that the source extension and drain extension are asymmetrically positioned with respect to the gate structure by an asymmetry measure.
Abstract:
This method for producing porous sintered aluminum includes: mixing aluminum powder with a sintering aid powder containing titanium to obtain a raw aluminum mixed powder; mixing the raw aluminum mixed powder with a water-soluble resin binder, water, and a plasticizer containing at least one selected from polyhydric alcohols, ethers, and esters to obtain a viscous composition; drying the viscous composition in a state where air bubbles are mixed therein to obtain a formed object prior to sintering; and heating the formed object prior to sintering in a non-oxidizing atmosphere, wherein when a temperature at which the raw aluminum mixed powder starts to melt is expressed as Tm (° C.), a temperature T (° C.) of the heating fulfills Tm−10 (° C.)≦T≦685 (° C.).
Abstract:
A fabrication method for a semiconductor device structure is provided. The device structure has a layer of silicon and a layer of silicon dioxide overlying the layer of silicon, and the method begins by forming an isolation recess by removing a portion of the silicon dioxide and a portion of the silicon. The isolation recess is filled with stress-inducing silicon nitride and, thereafter, the silicon dioxide is removed such that the stress-inducing silicon nitride protrudes above the silicon. Next, the exposed silicon is thermally oxidized to form silicon dioxide hardmask material overlying the silicon. Thereafter, a first portion of the silicon dioxide hardmask material is removed to reveal an accessible surface of the silicon, while leaving a second portion of the silicon dioxide hardmask material intact. Next, silicon germanium is epitaxially grown from the accessible surface of the silicon.
Abstract:
An electronic apparatus includes a mainframe with a keyboard embedded therein, a mounting frame pivotally connected with the mainframe, a display screen mounted in the mounting frame, a lighting source disposed on the mounting frame, and an optical element cooperating with the lighting source and slideably mounted on the mounting frame. Light from the lighting source is projected to different predetermined areas by adjusting positions of the optical element relative to the lighting source. In each of the positions of the optical element, the light from the lighting source is modulated by a corresponding portion of the optical element to be projected to a corresponding predetermined area.