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    Method for producing a resist structure
    101.
    发明授权
    Method for producing a resist structure 失效
    生产电阻结构的方法

    公开(公告)号：US5229258A

    公开(公告)日：1993-07-20

    申请号：US682142

    申请日：1991-04-08

    申请人： Recai Sezi ,  Horst Borndorfer ,  Eva Rissel ,  Rainer Leuschner ,  Michael Sebald ,  Hellmut Ahne ,  Siegfried Birkle

    发明人： Recai Sezi ,  Horst Borndorfer ,  Eva Rissel ,  Rainer Leuschner ,  Michael Sebald ,  Hellmut Ahne ,  Siegfried Birkle

    IPC分类号： G03F7/38 ,  G03F7/20 ,  G03F7/26 ,  G03F7/36 ,  H01L21/027

    CPC分类号： G03F7/2022 ,  G03F7/265

    摘要： High resolution resist structures with steep edges are obtained using standard equipment, even in cases involving critical contact-hole planes. First, a photoresist layer containing a polymer with chemically reactive groups and a photoactive component based on diazoketone or quinone diazide is deposited on a substrate. The photoresist layer is then irradiated with a patterned image and treated with a polyfunctional organic compound having functional groups that can chemically react with the reactive groups of the polymer. This step is followed by a maskless flood exposure. The photoresist layer irradiated in this manner is then treated with a metal-containing organic compound having at least one functional group capable of chemical reaction with the reactive groups of the polymer, followed by etching in an oxygen-containing plasma.

    摘要翻译： 使用标准设备获得具有陡边的高分辨率抗蚀结构，即使在涉及关键接触孔平面的情况下也是如此。 首先，将含有具有化学反应性基团的聚合物和基于重氮酮或醌二叠氮化物的光活性组分的光致抗蚀剂层沉积在基材上。 然后用图案化图像照射光致抗蚀剂层，并用具有可与聚合物的反应性基团发生化学反应的官能团的多官能有机化合物处理。 此步骤之后是无掩盖的洪水暴露。 然后以这种方式照射的光致抗蚀剂层用具有至少一个能够与聚合物的反应性基团进行化学反应的官能团的含金属有机化合物处理，随后在含氧等离子体中进行蚀刻。