Abstract:
Determination of one or more optical characteristics of a structure of a semiconductor wafer includes measuring one or more optical signals from one or more structures of a sample, determining a background optical field associated with a reference structure having a selected set of nominal characteristics based on the one or more structures, determining a correction optical field suitable for at least partially correcting the background field, wherein a difference between the measured one or more optical signals and a signal associated with a sum of the correction optical field and the background optical field is below a selected tolerance level, and extracting one or more characteristics associated with the one or more structures utilizing the correction optical field.
Abstract:
A focusing EBCCD includes a control device positioned between a photocathode and a CCD. The control device has a plurality of holes therein, wherein the plurality of holes are formed perpendicular to a surface of the photocathode, and wherein a pattern of the plurality of holes is aligned with a pattern of pixels in the CCD. Each hole is surrounded by at least one first electrode, which is formed on a surface of the control device facing the photocathode. The control device may include a plurality of ridges between the holes. The control device may be separated from the photocathode by approximately half a shorter dimension of a CCD pixel or less. A plurality of first electrodes may be provided, wherein each first electrode surrounds a given hole and is separated from the given hole by a gap.