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公开(公告)号:US10778925B2
公开(公告)日:2020-09-15
申请号:US16439297
申请日:2019-06-12
Applicant: KLA-Tencor Corporation
Inventor: Yung-Ho Alex Chuang , Jingjing Zhang , Sharon Zamek , John Fielden , Devis Contarato , David L. Brown
IPC: H04N5/378 , G01N21/956 , H04N5/361 , H04N5/372 , H01L27/148 , G01N21/95 , G06T7/00
Abstract: A multiple-column-per-channel image CCD sensor utilizes a multiple-column-per-channel readout circuit including connected transfer gates that alternately transfer pixel data (charges) from a group of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at multiple times the line clock rate to pass the image charges to the shared output circuit. A symmetrical fork-shaped diffusion is utilized in one embodiment to merge the image charges from the group of related pixel columns. A method of driving the multiple-column-per-channel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the multiple-column-per-channel CCD sensor is also described.
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公开(公告)号:US10539512B2
公开(公告)日:2020-01-21
申请号:US15707791
申请日:2017-09-18
Applicant: KLA-Tencor Corporation
Inventor: Abdurrahman Sezginer , Patrick LoPresti , Joe Blecher , Rui-fang Shi , Yalin Xiong , John Fielden
IPC: G06K9/62 , G01N21/88 , G01N21/958 , G06T7/00
Abstract: Block-to-block reticle inspection includes acquiring a swath image of a portion of a reticle with a reticle inspection sub-system, identifying a first occurrence of a block in the swatch image and at least a second occurrence of the block in the swath image substantially similar to the first occurrence of the block and determining at least one of a location, one or more geometrical characteristics of the block and a spatial offset between the first occurrence of the block and the at least a second occurrence of the block.
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公开(公告)号:US10446696B2
公开(公告)日:2019-10-15
申请号:US16151225
申请日:2018-10-03
Applicant: KLA-Tencor Corporation
Inventor: Jehn-Huar Chern , Ali R. Ehsani , Gildardo Delgado , David L. Brown , Yung-Ho Alex Chuang , John Fielden
IPC: G01N21/88 , G01N21/95 , H01L31/0216 , G01N21/956 , H01L27/146 , H01L27/148
Abstract: An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer and a doped layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.
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公开(公告)号:US10439355B2
公开(公告)日:2019-10-08
申请号:US15901388
申请日:2018-02-21
Applicant: KLA-Tencor Corporation
Inventor: Yung-Ho Chuang , J. Joseph Armstrong , Yujun Deng , Justin Dianhuan Liou , Vladimir Dribinski , John Fielden
IPC: G01N21/95 , G02B17/08 , H01S3/23 , H01S3/00 , H01S3/30 , H01S3/10 , H01S3/067 , H01S3/16 , H01S3/11 , G02F1/35 , G02F1/39
Abstract: An optical inspection system that utilizes sub-200 nm incident light beam to inspect a surface of an object for defects is described. The sub-200 nm incident light beam is generated by combining first light having a wavelength of about 1109 nm with second light having a wavelength of approximately 234 nm. An optical system includes optical components configured to direct the incident light beam to a surface of the object, and image relay optics are configured to collect and relay at least two channels of light to a sensor, where at least one channel includes light reflected from the object, and at least one channel includes light transmitted through the object. The sensor is configured to simultaneously detect both the reflected and transmitted light. A laser for generating the sub-200 nm incident light beam includes a fundamental laser, two or more harmonic generators, a frequency doubler and a two frequency mixing stages.
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公开(公告)号:US20190285407A1
公开(公告)日:2019-09-19
申请号:US15952081
申请日:2018-04-12
Applicant: KLA-Tencor Corporation
Inventor: Yung-Ho Alex Chuang , Yinying Xiao-Li , John Fielden , Xuefeng Liu , Peilin Jiang
IPC: G01B11/27
Abstract: A system for measuring an overlay error of a sample is disclosed. The system may include a broadband illumination source configured to emit broadband illumination. The system may also include one or more optical elements configured to direct the broadband illumination to a target disposed on the sample, wherein the one or more optical elements are configured to collect illumination from the target and direct it to a spectrometer, wherein the spectrometer is configured to disperse multiple wavelengths of the illumination collected from the sample to multiple elements of a sensor to generate a plurality of signals. The system may also include a controller configured to calculate an overlay error between a first structure and a second structure of the target by comparing the plurality of signals with a plurality of calculated signals.
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公开(公告)号:US10194108B2
公开(公告)日:2019-01-29
申请号:US15806913
申请日:2017-11-08
Applicant: KLA-Tencor Corporation
Inventor: Yung-Ho Alex Chuang , John Fielden , David L. Brown , Jingjing Zhang , Keith Lyon , Mark Shi Wang
IPC: G01N21/00 , H04N5/3722 , G01N21/956
Abstract: Pixel aperture size adjustment in a linear sensor is achieved by applying more negative control voltages to central regions of the pixel's resistive control gate, and applying more positive control voltages to the gate's end portions. These control voltages cause the resistive control gate to generate an electric field that drives photoelectrons generated in a selected portion of the pixel's light sensitive region into a charge accumulation region for subsequent measurement, and drives photoelectrons generated in other portions of the pixel's light sensitive region away from the charge accumulation region for subsequent discard or simultaneous readout. A system utilizes optics to direct light received at different angles or locations from a sample into corresponding different portions of each pixel's light sensitive region. Multiple aperture control electrodes are selectively actuated to collect/measure light received from either narrow or wide ranges of angles or locations, thereby enabling rapid image data adjustment.
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公开(公告)号:US10175555B2
公开(公告)日:2019-01-08
申请号:US15806953
申请日:2017-11-08
Applicant: KLA-Tencor Corporation
Inventor: Yung-Ho Alex Chuang , Xiaoxu Lu , Baigang Zhang , John Fielden , Vladimir Dribinski
Abstract: A laser assembly generates continuous wave (CW) laser output light in the range of approximately 181 nm to approximately 185 nm by generating fourth harmonic light from first fundamental CW light having a first fundamental wavelength between 1 μm and 1.1 μm, generating fifth harmonic light by mixing the fourth harmonic light with the first fundamental CW light, and then mixing the fifth harmonic light with second fundamental or signal CW light having a second wavelength between 1.26 μm and 1.82 μm. The fifth harmonic light is generated using an external cavity that circulates first fundamental CW light through a first nonlinear crystal, and by directing the fourth harmonic light through the first nonlinear crystal. The laser output light is generated using a second cavity that passes circulated second fundamental or signal CW light through a second nonlinear crystal, and directing the fifth harmonic light through the second nonlinear crystal.
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公开(公告)号:US10133181B2
公开(公告)日:2018-11-20
申请号:US15234638
申请日:2016-08-11
Applicant: KLA-Tencor Corporation
Inventor: Yung-Ho Alex Chuang , Yinying Xiao-Li , Xuefeng Liu , John Fielden
Abstract: An electron source is formed on a silicon substrate having opposing first and second surfaces. At least one field emitter is prepared on the second surface of the silicon substrate to enhance the emission of electrons. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitter using a process that minimizes oxidation and defects. The field emitter can take various shapes such as pyramids and rounded whiskers. One or several optional gate layers may be placed at or slightly lower than the height of the field emitter tip in order to achieve fast and accurate control of the emission current and high emission currents. The field emitter can be p-type doped and configured to operate in a reverse bias mode or the field emitter can be n-type doped.
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公开(公告)号:US20180224711A1
公开(公告)日:2018-08-09
申请号:US15794887
申请日:2017-10-26
Applicant: KLA-Tencor Corporation
Inventor: Yung-Ho Alex Chuang , Vahid Esfandyarpour , John Fielden , Baigang Zhang , Yinying Xiao Li
IPC: G02F1/39 , G02F1/355 , H01L21/67 , G01N21/359 , G01N21/95
Abstract: Systems and methods for measuring or inspecting semiconductor structures using broadband infrared radiation are disclosed. The system may include an illumination source comprising a pump source configured to generate pump light and a nonlinear optical (NLO) assembly configured to generate broadband IR radiation in response to the pump light. The system may also include a detector assembly and a set of optics configured to direct the IR radiation onto a sample and direct a portion of the IR radiation reflected and/or scattered from the sample to the detector assembly.
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公开(公告)号:US20180188633A1
公开(公告)日:2018-07-05
申请号:US15806953
申请日:2017-11-08
Applicant: KLA-Tencor Corporation
Inventor: Yung-Ho Alex Chuang , Xiaoxu Lu , Baigang Zhang , John Fielden , Vladimir Dribinski
CPC classification number: G02F1/353 , G02F1/3501 , G02F1/3551 , G02F1/3558 , G02F2001/3503 , G02F2001/354
Abstract: A laser assembly generates continuous (CW) laser output light in the range of approximately 181 nm to approximately 185 nm by generating fourth harmonic light from first fundamental CW light having a first fundamental wavelength between 1 μm and 1.1 μm, generating fifth harmonic light by mixing the fourth harmonic light with the first fundamental CW light, and then mixing the fifth harmonic light with second fundamental or signal CW light having a second wavelength between 1.26 μm and 1.82 μm. The fifth harmonic light is generated using an external cavity that circulates first fundamental CW light through a first nonlinear crystal, and by directing the fourth harmonic light through the first nonlinear crystal. The laser output light is generated using a second cavity that passes circulated second fundamental or signal CW light through a second nonlinear crystal, and directing the fifth harmonic light through the second nonlinear crystal.
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