公开(公告)号：US20220230600A1

公开(公告)日：2022-07-21

申请号：US17713358

申请日：2022-04-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Susumu KAWASHIMA ,  Koji KUSUNOKI ,  Kazunori WATANABE ,  Kouhei TOYOTAKA ,  Naoto KUSUMOTO ,  Shunpei YAMAZAKI

IPC: G09G3/36 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/105 ,  H01L27/12 ,  H01L29/24 ,  H01L29/786

Abstract: A display device capable of performing image processing is provided. A memory node is provided in each pixel included in the display device. An intended correction data is held in the memory node. The correction data is calculated by an external device and written into each pixel. The correction data is added to image data by capacitive coupling, and the resulting data is supplied to a display element. Thus, the display element can display a corrected image. The correction enables image upconversion, for example.

公开(公告)号：US20210383762A1

公开(公告)日：2021-12-09

申请号：US17411205

申请日：2021-08-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidetomo KOBAYASHI ,  Kouhei TOYOTAKA

IPC: G09G3/3266 ,  G09G3/3233 ,  G09G3/34 ,  G09G3/36

Abstract: A display device that can be easily and more flexibly designed is provided. The display device includes a pixel circuit and a driver circuit in a display portion. The driver circuit includes a plurality of pulse output circuits. Each of the plurality of pulse output circuits has a function of driving a gate line. The pixel circuit is electrically connected to the gate line. Each of the plurality of pulse output circuits includes a first transistor. The pixel circuit includes a second transistor. A layer including the second transistor is over a layer including the first transistor, and the first transistor and the second transistor overlap with each other.

公开(公告)号：US20210217805A1

公开(公告)日：2021-07-15

申请号：US17055383

申请日：2019-04-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Koji KUSUNOKI ,  Shingo EGUCHI ,  Yosuke TSUKAMOTO ,  Kazunori WATANABE ,  Kouhei TOYOTAKA

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/00

Abstract: A display device with high resolution is provided. Manufacturing cost of a display device using a micro LED as a display element is reduced. The display device includes a substrate, a plurality of transistors, and a plurality of light-emitting diodes. The plurality of light-emitting diodes are provided in a matrix over the substrate. Each of the plurality of transistors are electrically connected to at least one of the plurality of light-emitting diodes. The plurality of light-emitting diodes are positioned closer to the substrate than the plurality of transistors are. The plurality of light-emitting diodes emit light to the opposite side of the substrate.

公开(公告)号：US20210143281A1

公开(公告)日：2021-05-13

申请号：US17010151

申请日：2020-09-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE ,  Kei TAKAHASHI ,  Kouhei TOYOTAKA ,  Masashi TSUBUKU ,  Kosei NODA ,  Hideaki KUWABARA

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/26 ,  G06K19/077 ,  H01L21/8236 ,  H01L23/66 ,  H01L27/088 ,  H01L29/24 ,  H01L29/66

Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

公开(公告)号：US20200372868A1

公开(公告)日：2020-11-26

申请号：US16770998

申请日：2018-12-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Susumu KAWASHIMA ,  Koji KUSUNOKI ,  Kei TAKAHASHI ,  Kouhei TOYOTAKA ,  Kazunori WATANABE ,  Shigeru ONOYA

IPC: G09G3/36 ,  G02F1/1368 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/24 ,  H01L29/786

Abstract: An object of the present invention is to provide a display device with high display quality. The display device of the present invention includes a pixel and a source driver circuit. The pixel includes first and second transistors (21, 22), a capacitor (25), and a display element (26). The source driver circuit is electrically connected to first and second wirings (31, 32). The first wiring (31) is electrically connected to one electrode of the capacitor 25 and one electrode of the display element (26) through the first transistor (21). The second wiring (32) is electrically connected to the other electrode of the capacitor (25) and the other electrode of the display element (26) through the second transistor (22).

公开(公告)号：US20200320930A1

公开(公告)日：2020-10-08

申请号：US16765496

申请日：2018-12-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kouhei TOYOTAKA ,  Kei TAKAHASHI ,  Susumu KAWASHIMA ,  Shunpei YAMAZAKI

IPC: G09G3/3233 ,  H01L27/32

Abstract: A semiconductor device that reduces variations in the characteristics of driving transistors and corrects image data is provided. The semiconductor device includes an image data retention portion, a correction data retention portion, a driver circuit portion, a display element, and a threshold voltage correction circuit portion. The image data retention portion has a function of retaining first image data, and the correction data retention portion has a function of retaining correction data, and a function of generating second image data corresponding to the first image data and the correction data when the first image data is retained in the image data retention portion. The driver circuit portion has a function of generating a current corresponding to the second image data and feeding the current to the display element, and the threshold voltage correction circuit portion has a function of correcting a threshold voltage of a driving transistor in the driver circuit portion. With the above structure, the semiconductor device can correct the image data, correct the threshold voltage of the driving transistor, and perform display based on the second image data.

公开(公告)号：US20200312238A1

公开(公告)日：2020-10-01

申请号：US16772912

申请日：2018-12-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kazunori WATANABE ,  Kei TAKAHASHI ,  Susumu KAWASHIMA ,  Kouhei TOYOTAKA ,  Koji KUSUNOKI

IPC: G09G3/3225 ,  H01L27/12 ,  G09G3/36

Abstract: A display device capable of improving image quality is provided.A first pixel circuit and a second pixel circuit are included; a memory node is provided in each pixel circuit and a first signal can be retained in the memory node. The first signal is added to a second signal by capacitive coupling, and then can be supplied to a display element. Thus, the display device can display a corrected image. Furthermore, the first pixel circuit and the second pixel circuit share a signal line, whereby the aperture ratio of a pixel can be increased.

公开(公告)号：US20200278398A1

公开(公告)日：2020-09-03

申请号：US16645980

申请日：2018-09-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Toshiyuki ISA ,  Koji KUSUNOKI ,  Akihiro CHIDA ,  Kouhei TOYOTAKA ,  Ryota TAJIMA

IPC: G01R31/367 ,  G01R31/3842 ,  G01R31/389 ,  H01M10/0525

Abstract: An anomaly detection system for a secondary battery which detects the remaining capacity of the secondary battery on an electric vehicle, cautions against the secondary battery with anomalous characteristics, stops using the secondary battery, changes the secondary battery, or changes charging conditions of the secondary battery is provided. The anomaly detection system is provided; the system compares a value obtained by estimating internal resistance or SOC of a secondary battery based on the measured value of a current or a voltage of the secondary battery with the use of a nonlinear Kalman filter and a value input to an anomaly detection system (network) of AI to predict a change in the internal resistance; the system regards a case where the difference is large as an anomaly; and the system detects an anomaly.

公开(公告)号：US20200175905A1

公开(公告)日：2020-06-04

申请号：US16636435

申请日：2018-08-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Koji KUSUNOKI ,  Susumu KAWASHIMA ,  Kouhei TOYOTAKA

IPC: G09G3/20 ,  G02F1/1368 ,  G02F1/1362 ,  G02F1/1343 ,  H01L27/12 ,  G06T3/40 ,  G06N3/04

Abstract: A high-resolution display system is provided.A display system with high display quality is provided. The display system includes a processing unit and a display unit. A first image signal is supplied to the processing unit. The processing unit has a function of generating a second image signal by using the first image signal. The processing unit has a function of generating a correction signal. The display unit includes a pixel. The pixel includes a display element and a memory circuit. The second image signal and the correction signal are supplied to the pixel. The memory circuit has a function of retaining the correction signal.

公开(公告)号：US20190392914A1

公开(公告)日：2019-12-26

申请号：US16458304

申请日：2019-07-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiko AMANO ,  Kouhei TOYOTAKA ,  Hiroyuki MIYAKE ,  Aya MIYAZAKI ,  Hideaki SHISHIDO ,  Koji KUSUNOKI

IPC: G11C19/28 ,  H01L27/12 ,  G09G3/36 ,  H05K7/02 ,  H01L25/03 ,  G11C19/18 ,  H03K19/00

Abstract: An object is to provide a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit. A pulse signal output circuit according to one embodiment of the disclosed invention includes first to tenth transistors. The ratio W/L of the channel width W to the channel length L of the first transistor and W/L of the third transistor are each larger than W/L of the sixth transistor. W/L of the fifth transistor is larger than W/L of the sixth transistor. W/L of the fifth transistor is equal to W/L of the seventh transistor. W/L of the third transistor is larger than W/L of the fourth transistor. With such a structure, a pulse signal output circuit capable of operating stably and a shift register including the pulse signal output circuit can be provided.