Charged wall amorphous magnetic layers
    101.
    发明授权
    Charged wall amorphous magnetic layers 失效
    带电壁的非晶磁性层

    公开(公告)号:US4330848A

    公开(公告)日:1982-05-18

    申请号:US129006

    申请日:1980-03-10

    CPC classification number: B82Y25/00 H01F10/00 H01F10/3204 H01F10/3286

    Abstract: Amorphous ferrimagnetic layers are described with support stable and mobile magnetic charged walls. These layers can be used as drive layers in magnetic bubble domain devices, and are characterized by very weak even-fold in-plane anisotropy, or substantially zero in-plane anisotropy. The layers are metallic alloy compositions having magnetic properties that can be tailored over wide ranges, and are particularly suitable as drive layers for the propagation of bubble domains of extremely small diameters.

    Abstract translation: 描述了非晶铁磁性层,支持稳定和移动的磁性带电壁。 这些层可以用作磁性气泡区域装置中的驱动层,其特征在于非常弱的面内各向异性均匀的平面或基本上为零的面内各向异性。 这些层是具有可以在宽范围内定制的磁性的金属合金组合物,并且特别适用于用于传播极小直径的气泡畴的驱动层。

    Power source device for bubble memory unit
    102.
    发明授权
    Power source device for bubble memory unit 失效
    气泡存储单元电源装置

    公开(公告)号:US4327422A

    公开(公告)日:1982-04-27

    申请号:US169791

    申请日:1980-07-17

    CPC classification number: G11C19/085 G06F1/26 H02H3/247

    Abstract: A power source device for a bubble memory unit, wherein there is supplied a first DC voltage E.sub.c which is applied to control circuitry for controlling the reading and writing of data, a second DC voltage signal E.sub.d which is applied to drive circuitry for driving a bubble memory element, and a memory signal M.sub.e which enables data to be written in or read from the bubble memory element, the signals E.sub.c, E.sub.d and M.sub.e being made to rise and fall according to a prescribed sequence as a commercial power supply is connected and disconnected. The power source device includes first and second DC power source circuits, a comparator circuit for comparing the magnitude of the first DC voltage E.sub.c with a reference level V.sub.M having a value greater than an allowable lower limit value, and a delay circuit. The second DC power source circuit is actuated following a prescribed time delay which begins when the value of signal E.sub.c surpasses the reference level V.sub.M at the time that the commercial power supply is connected, and the memory enable signal M.sub.e is produced after the second DC power source circuit has been actuated. The memory enable signal M.sub.e is made to vanish when the magnitude of signal E.sub.c drops below the reference potential V.sub.m at the time that the commercial power supply is disconnected, the second DC power source circuit being rendered non-operational following a prescribed time delay.

    Abstract translation: 一种用于气泡存储单元的电源装置,其中提供了施加到用于控制数据的读取和写入的控制电路的第一DC电压Ec,施加到用于驱动气泡的驱动电路的第二DC电压信号Ed 存储器元件和存储器信号Me,其使得能够将数据写入或从气泡存储元件读取,使得根据作为商用电源的规定顺序使信号Ec,Ed和Me上升和下降的信号被连接和断开 。 电源装置包括第一和第二DC电源电路,比较电路,用于将第一DC电压Ec的大小与具有大于允许下限值的参考电平VM进行比较;以及延迟电路。 第二直流电源电路按照在商用电源连接时信号Ec的值超过参考电平VM开始的规定的时间延迟来启动,并且在第二直流电源之后产生存储器使能信号Me 源电路已被启动。 当商用电源断开时,当信号Ec的大小下降到参考电位Vm以下时,使存储器使能信号Me消失,第二直流电源电路在规定的时间延迟之后变得不可操作。

    Magnetic bubble memory device
    103.
    发明授权
    Magnetic bubble memory device 失效
    磁性气泡记忆装置

    公开(公告)号:US4326268A

    公开(公告)日:1982-04-20

    申请号:US174437

    申请日:1980-08-01

    CPC classification number: G11C19/0858 G11C19/0866 G11C19/0875

    Abstract: A magnetic bubble memory device according to this invention comprises a plurality of minor loops, a read-out major line is disposed at one end of the minor loops through gates having a replicating function, and a magnetic bubble detector which includes a detecting line is disposed at one end of the major line. Further, a propagation length from the other end of the read-out major line to the detecting line of the magnetic bubble detector is set at a bit length which slightly exceeds four times the number of the minor loops. For this reason, a continuous read-out operation at high speed is permitted without the influence of replicate pulses.

    Abstract translation: 根据本发明的磁性气泡存储装置包括多个次环,读出的主线通过具有复制功能的门设置在次环的一端,并且设置包括检测线的磁气泡检测器 在主线的一端。 此外,从读出的主线的另一端到磁性气泡检测器的检测线的传播长度被设定为稍微超过次级环的数目的四倍的位长度。 为此,允许高速连续读出操作而不受重复脉冲的影响。

    Magnetic bubble memory module
    104.
    发明授权
    Magnetic bubble memory module 失效
    磁性气泡存储模块

    公开(公告)号:US4321690A

    公开(公告)日:1982-03-23

    申请号:US46027

    申请日:1979-06-06

    Applicant: Ryo Imura

    Inventor: Ryo Imura

    CPC classification number: H01F10/20 G11C19/085 H01F27/22

    Abstract: A magnetic bubble memory module according to this invention is so constructed that heat developed by a rotating magnetic field-generating coil assembly is transmitted to linear ferrite plates of a bias magnetic field-generating device very efficiently.Accordingly, the temperature rise of a magnetic bubble chip can be suppressed conspicuously. As a result, the service temperature range of the magnetic bubble memory can be expanded.

    Abstract translation: 根据本发明的磁性气泡存储器模块被构造成使得由旋转磁场产生线圈组件产生的热量非常有效地传递到偏置磁场产生装置的线性铁氧体板。 因此,可以显着抑制气泡芯片的温度上升。 结果,可以扩大磁性气泡存储器的使用温度范围。

    Transfer and replication arrangement for magnetic bubble memory devices
    105.
    发明授权
    Transfer and replication arrangement for magnetic bubble memory devices 失效
    用于磁性气泡存储器件的转移和复制布置

    公开(公告)号:US4316263A

    公开(公告)日:1982-02-16

    申请号:US73772

    申请日:1979-09-10

    Inventor: William D. Doyle

    CPC classification number: G11C19/0858

    Abstract: A magnetic bubble replication and transfer arrangement is disclosed which provides for replicating magnetic bubbles in thin planar layers of magnetic material without the need for electrical current carrying conductor elements. The arrangement includes a replicating half-disc permalloy element disposed in a particular way between first and second tracks formed from half-disc elements which are deposited on a surface of the magnetic layer. When a rotating magnetic field in the plane of the material is rotated in a predetermined direction with respect to the above arrangement, replication of a bubble in the first track occurs at a replication region where a portion of the replicating element is adjacent the first track. The original bubble continues movement within the first track while the newly formed bubble moves along the replicating element into the second track in response to rotation of the in-plane magnetic field.Transfer of bubbles from the second track to the first track and transfer without replication from the first track to the second track is provided for by applying timed electrical signals to a transfer electrical conductor which is interlinkably disposed between the magnetic layer and elements of the second track and a portion of the replicating element adjacent the first track. The timed electrical signals are applied for specific portions of the rotation cycle of the in-plane field to effect bubble transfer between first and second tracks.

    Abstract translation: 公开了一种磁性气泡复制和转印装置,其提供了磁性材料的薄平坦层中的复制磁性气泡,而不需要承载导电元件的电流。 该装置包括复制的半圆盘坡莫合金元件,以特定方式设置在由半圆盘元件形成的第一和第二轨道之间,该半圆盘元件沉积在磁性层的表面上。 当材料的平面中的旋转磁场相对于上述布置在预定方向上旋转时,第一轨道中的气泡的复制发生在复制区域,其中复制元件的一部分与第一轨道相邻。 原始气泡在第一轨道内继续移动,同时新形成的气泡响应于平面内磁场的旋转而沿着复制元件移动到第二轨道中。 通过将定时电信号施加到可互连地设置在磁性层和第二轨道的元件之间的转移电导体来提供气泡从第二轨道传递到第一轨道并且不从第一轨道传输到第二轨道 以及与第一轨道相邻的复制元件的一部分。 定时电信号被施加在平面场的旋转周期的特定部分,以实现第一和第二轨迹之间的气泡转移。

    Magnetic bubble memory devices
    106.
    发明授权
    Magnetic bubble memory devices 失效
    磁性气泡存储器件

    公开(公告)号:US4293929A

    公开(公告)日:1981-10-06

    申请号:US67121

    申请日:1979-08-16

    Applicant: Hirofumi Ohta

    Inventor: Hirofumi Ohta

    CPC classification number: G11C19/085

    Abstract: Around the magnetic bubble memory chip placed within a recess formed at approximate center of the insulating substrate are arranged a plurality of rod-like members of soft ferromagnetic material to be on substantially the same plane as the major surface of the chip. The intensity of the rotating magnetic field generated by the coils wound around the outer periphery of the insulating substrate encircling the chip is amplified by the plurality of rod-like members.

    Abstract translation: 在放置在形成在绝缘基板的大致中心处的凹部内的磁性气泡存储器芯片周围布置有多个软铁磁材料的棒状构件,与芯片的主表面在大致相同的平面上。 由围绕芯片的绝缘基板的外周缠绕的线圈产生的旋转磁场的强度被多个棒状部件放大。

    Contiguous disk bubble storage
    108.
    发明授权
    Contiguous disk bubble storage 失效
    相邻的磁盘空泡存储

    公开(公告)号:US4283775A

    公开(公告)日:1981-08-11

    申请号:US58718

    申请日:1979-07-18

    CPC classification number: G11C19/0816 G11C19/0875

    Abstract: A bubble storage system using contiguous propagation elements is described using magnetically soft drive layers for movement of the bubble domains in a bubble domain film, in response to the reorientation of a magnetic drive field in the plane of the drive layers. In contrast with prior art contiguous element propagation structures, charged walls are not employed for movement of bubble domains. Instead, magnetic poles along the drive layers are used to move the domains. Two drive layers are used, each of which is comprised of a magnetically soft material, such as permalloy. The drive layers are located at different heights with respect to the layer in which the magnetic bubble domains exist, the bottom drive layer being comprised of contiguous propagation elements defining a generally undulating edge along which the magnetic bubble domains move. This layer can be comprised of permalloy contiguous disks, diamonds, etc. The top layer is comprised of magnetically soft elements located over the cusp regions formed along the undulating edges of the underlying drive layer. For propagation around the disks or diamonds, the bottom drive layer is predominant in determining bubble motion. However, in the art of the cusp regions along the undulating edge defined by the bottom drive layer, the magnetic poles produced by the top drive layer are predominant. These elements in the top drive layer produce potential wells at those locations corresponding to cusps along the undulating edge defined by the contiguous propagation elements in the bottom drive layer, and therefore control bubble motion in the cusp regions. This eliminates a serious problem to satisfactory bubble motion along contiguous propagation element devices. A single level masking fabrication process is described where the top and bottom drive layers can be fabricated through the same mask, and a total chip design is shown which provides all functions required in a complete storage chip.

    Abstract translation: 使用磁软驱动层来描述使用连续传播元件的气泡存储系统,以响应于在驱动层的平面中的磁驱动场的重新定向来响应气泡区膜中的气泡域的移动。 与现有技术的连续元件传播结构不同,带电壁不用于气泡畴的移动。 相反,沿着驱动层的磁极用于移动域。 使用两个驱动层,每个驱动层由柔软的材料构成,例如坡莫合金。 驱动层相对于其中存在磁性气泡区域的层位于不同的高度,底部驱动层由限定磁性泡区域沿其移动的大致起伏的边缘的连续传播元件组成。 该层可以由坡莫合金连续盘,金刚石等组成。顶层由位于沿着下驱动层的起伏边缘形成的尖端区域上方的软磁元件构成。 为了在盘或钻石周围传播,底部驱动层主要用于确定气泡运动。 然而,在由底部驱动层限定的起伏边缘的尖端区域的领域中,由顶部驱动层产生的磁极是主要的。 顶部驱动层中的这些元件在沿着由底部驱动层中的连续传播元件限定的起伏边缘的尖端对应的那些位置产生势阱,因此控制尖端区域中的气泡运动。 这消除了沿连续传播元件装置令人满意的气泡运动的严重问题。 描述了单层屏蔽制造工艺,其中顶部和底部驱动层可以通过相同的掩模制造,并且示出了提供完整存储芯片中所需的所有功能的总芯片设计。

    Magnetic strip domain memory system
    109.
    发明授权
    Magnetic strip domain memory system 失效
    磁条域记忆系统

    公开(公告)号:US4281396A

    公开(公告)日:1981-07-28

    申请号:US859058

    申请日:1977-12-09

    Applicant: Jan Roos

    Inventor: Jan Roos

    CPC classification number: G11C19/08 G11C19/0858

    Abstract: A magnetic memory device in which information is stored in the form of strip domains in a layer of magnetic material supported by a layer of ferromagnetic material. The ferromagnetic material contains a pattern of alternately magnetized strips for sustaining a magnetic field periodically varying in a first coordinate direction and directed transverse to the domain layer. The device also includes a generator for receiving and converting data into configurations of the strip domains in the plate.

    Abstract translation: 一种磁存储器件,其中信息以铁磁材料层支撑的磁性材料层中的带状结构的形式存储。 铁磁材料包含交替磁化条带的图案,用于维持在第一坐标方向周期性变化并横向于畴层的磁场。 该装置还包括一个发生器,用于接收和转换数据到板中的带状结构。

    Ion-implanted magnetic bubble memory with merge port
    110.
    发明授权
    Ion-implanted magnetic bubble memory with merge port 失效
    带合并口的离子注入磁性气泡存储器

    公开(公告)号:US4276614A

    公开(公告)日:1981-06-30

    申请号:US99556

    申请日:1979-12-03

    CPC classification number: G11C19/0883

    Abstract: A gap between sets of contiguous discs defined by unimplanted regions in an otherwise ion-implanted bubble layer allows a merge function to be achieved. The alignment of the gap axis with an axis of symmetry of the bubble layer and the width of the gap are important considerations in the performance of the merge.

    Abstract translation: 由离子注入的气泡层中的未植入区域限定的连续圆盘组之间的间隙允许实现合并功能。 间隙轴与气泡层的对称轴和间隙的宽度的对准是合并性能中的重要考虑因素。

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