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公开(公告)号:US1677055A
公开(公告)日:1928-07-10
申请号:US1687825
申请日:1925-03-20
申请人: ABRAHAM SIMONS
发明人: ABRAHAM SIMONS
IPC分类号: B23B27/20
CPC分类号: B23B27/20 , Y10T407/2222 , Y10T407/23
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公开(公告)号:US1346056A
公开(公告)日:1920-07-06
申请号:US38608620
申请日:1920-06-02
申请人: PAUL POULAIN
发明人: PAUL POULAIN
IPC分类号: B23B27/20
CPC分类号: B23B27/20 , Y10T407/2282
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公开(公告)号:US12000212B2
公开(公告)日:2024-06-04
申请号:US17868852
申请日:2022-07-20
发明人: Brandon Paul Linford , Cody William Knuteson , Jason Dean Blackburn , Daniel Call Mortensen , Steven Swan
CPC分类号: E21B10/55 , B01J3/06 , B01J3/062 , B24D18/0009 , B24D99/005 , B01J2203/062 , B01J2203/0655 , B23B27/20 , E21B10/567
摘要: Embodiments relate to polycrystalline diamond compacts (“PDCs”) including a polycrystalline diamond (“PCD”) table having a diamond grain size distribution selected for improving performance and/or leachability. In an embodiment, a PDC includes a PCD table bonded to a substrate. The PCD table includes a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween. Other embodiments are directed to methods of forming PDCs, and various applications for such PDCs in rotary drill bits, bearing apparatuses, and wire-drawing dies.
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公开(公告)号:US20240091863A1
公开(公告)日:2024-03-21
申请号:US17768511
申请日:2020-10-09
发明人: Rintaro SUGIMOTO , Takashi HARADA , Satoru KUKINO
摘要: A diamond coated tool includes a base material and a diamond layer provided on the base material. The diamond layer has a boron content of 1×103 ppma or more and 1×106 ppma or less and an oxygen content of 1×102 ppma or more and 1×105 ppma or less in a first region surrounded by a surface of the diamond layer and a first imaginary plane located at a distance of 1 μm from the surface in a thickness direction.
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公开(公告)号:US20220355388A1
公开(公告)日:2022-11-10
申请号:US17634981
申请日:2020-12-04
发明人: Takashi HARADA , Satoru KUKINO , Naoki WATANOBE
摘要: A diamond tool includes a diamond at least on a cutting edge including one or two or more diamond grains including a diamond phase composed of a diamond crystal structure and a graphite phase composed of a graphite crystal structure. When a ratio Iπ*/Iσ* between an intensity of a π* peak derived from a π bond of carbon in the graphite phase and an intensity of a σ* peak derived from a σ bond of carbon in the graphite phase and a σ bond of carbon in the diamond phase is determined for the diamond grain by measuring an energy loss associated with excitation of K-shell electrons of carbon by electron energy loss spectroscopy, the ratio Iπ*/Iσ* of the diamond grain on a surface of the cutting edge is 0.1 to 2 and a ratio Iπ*/Iσ* of the diamond grain at a depth position of 0.5 μm from the surface of the cutting edge is 0.001 to 0.1.
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公开(公告)号:US11458546B2
公开(公告)日:2022-10-04
申请号:US16470138
申请日:2017-02-02
发明人: Kazuo Maeda
摘要: The throwaway insert includes a base and a cutting edge member. The cutting edge member includes a rake face, a flank face, a first connecting face, a second connecting face, and a first ridgeline serving as a cutting edge. The rake face includes a main surface and a first chamfer provided at an edge tip portion of the cutting edge member, the edge tip portion including an extreme tip portion of the cutting edge member. In a plan view from an upper surface of the base, the flank face, the first connecting face, and the second connecting face are located external to the base. The first chamfer is inclined relative to the main surface so as to increase a thickness of the cutting edge member as the first chamfer is closer to the main surface.
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公开(公告)号:US20220297201A1
公开(公告)日:2022-09-22
申请号:US17642196
申请日:2020-08-18
发明人: Akihiko UEDA , Mayuka SEGAWA , Rintaro SUGIMOTO , Machiko ABE , Takashi HARADA , Satoru KUKINO
摘要: A diamond cutting tool comprises a base metal part and a diamond part joined to the base metal part, wherein the base metal part is made of an alloy containing tungsten carbide, the diamond part configures at least a cutting blade, the cutting blade comprises a portion of a rake face, a portion of a flank face, and a ridge line at which the rake face and the flank face cross, the diamond cutting tool has a region A, the region A is a region that is present bridging over the three, which are the rake face, the ridge line, and the flank face on the surface of the cutting blade, and the region A has a surface roughness Ra of not more than 0.2 μm and a concentration of tungsten element of not more than 1 mass %.
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公开(公告)号:US20220250990A1
公开(公告)日:2022-08-11
申请号:US17625363
申请日:2020-07-17
发明人: Katsumi OKAMURA , Mayu AMEMIYA , Akito ISHII , Yuka DEGUCHI , Satoru KUKINO
IPC分类号: C04B35/5831 , C04B35/56 , B23B27/20
摘要: A cubic boron nitride sintered material comprises cubic boron nitride particles, a binding phase, and an interfacial phase. The interfacial phase intervenes between the cubic boron nitride particles and the binding phase. The interfacial phase includes aluminum, nitrogen, boron, and oxygen. A total of an average value of the atomic concentrations of aluminum included in the interfacial phase and an average value of the atomic concentrations of nitrogen included in the interfacial phase is 50.0 at % or more. A ratio of an average value of the atomic concentrations of nitrogen included in the interfacial phase to an average value of the atomic concentrations of boron included in the interfacial phase is more than 1.00.
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公开(公告)号:US11192826B2
公开(公告)日:2021-12-07
申请号:US16609369
申请日:2018-02-15
发明人: Akito Ishii , Katsumi Okamura
IPC分类号: C04B35/5831 , B23B27/20 , C04B35/628 , C04B35/63 , C04B35/645
摘要: A sintered material includes a first phase and a second phase, wherein the first phase is composed of cubic boron nitride particles, and the following relational expressions are satisfied when more than or equal to two cubic boron nitride particles adjacent to and in direct contact with each other among the cubic boron nitride particles are defined as a contact body, Di represents a length of an entire perimeter of the contact body, n represents the number of contact locations at which the cubic boron nitride particles are in direct contact with each other, dk represents a length of each of the contact locations, and Σdk (where k=1 to n) represents a total length of the contact locations: Dii=Di+(2×Σdk (where k=1 to n)); and [(Dii−Di)/Dii]×100≤50.
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公开(公告)号:US11186485B2
公开(公告)日:2021-11-30
申请号:US17052831
申请日:2020-02-27
发明人: Michiko Matsukawa , Satoru Kukino , Taisuke Higashi , Machiko Abe
IPC分类号: H01M4/02 , C01B21/064 , B23B27/20
摘要: A polycrystalline cubic boron nitride comprising 96% by volume or more of cubic boron nitride, wherein the cubic boron nitride has a dislocation density of 8×1015/m2 or less, the polycrystalline cubic boron nitride comprises a plurality of crystal grains, and the plurality of crystal grains have a median diameter d50 of an equivalent circle diameter of less than 100 nm.
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