公开(公告)号：US07678512B2

公开(公告)日：2010-03-16

申请号：US11657326

申请日：2007-01-24

申请人： Yoshi Ono ,  Bruce D. Ulrich ,  Wei Gao

发明人： Yoshi Ono ,  Bruce D. Ulrich ,  Wei Gao

IPC分类号： G03F1/00

CPC分类号： G03F7/0005 ,  G03F1/50

摘要： A method of fabricating a grayscale reticle includes preparing a quartz wafer substrate; depositing a layer of SRO on the top surface of the quartz substrate; patterning and etching the SRO to form an initial microlens pattern using step-over lithography; patterning and etching the SRO to form a recessed pattern in the SRO; depositing an opaque film on the SRO; patterning and etching the opaque film; depositing and planarizing a planarizing layer; cutting the quartz wafer into rectangular pieces sized to be smaller than a selected blank reticle; bonding the a piece a to selected reticle blank to form a grayscale reticle; and using the grayscale reticle to form a microlens array on a photoimager.

摘要翻译： 制造灰度标线的方法包括制备石英晶片衬底; 在石英衬底的顶表面上沉积SRO层; 图案化和蚀刻SRO以使用逐步光刻形成初始微透镜图案; 图案化和蚀刻SRO以在SRO中形成凹陷图案; 在SRO上沉积不透明膜; 图案化和蚀刻不透明膜; 沉积和平坦化平坦化层; 将石英晶片切割成尺寸小于所选空白掩模版的矩形块; 将片a粘合到所选的掩模版坯料上以形成灰度标线; 并使用灰度标线在光学成像仪上形成微透镜阵列。

公开(公告)号：US20090223829A1

公开(公告)日：2009-09-10

申请号：US12158535

申请日：2006-12-20

申请人： Wei Gao ,  Zhenmin Liu

发明人： Wei Gao ,  Zhenmin Liu

IPC分类号： C25D11/18 ,  C25D11/26 ,  C25D11/24 ,  C25D11/30 ,  C25D11/34

CPC分类号： C23C18/1848 ,  C23C18/1834 ,  C23C18/32 ,  C23C18/36 ,  C25D11/026 ,  C25D11/04 ,  C25D11/18 ,  C25D11/26 ,  C25D11/30 ,  C25D11/34

摘要： A method for electorless plating of a substrate such as magnesium, aluminium, titanium or an alloy, comprises the steps of forming a very thin film of oxide on the substrate by plasma electrolytic oxidation before depositing a layer comprising nickel on the substrate by electroless nickel deposition.

摘要翻译： 一种用于对诸如镁，铝，钛或合金的基底进行无电镀的方法包括以下步骤：通过等离子体电解氧化在衬底上形成非常薄的氧化物膜，然后通过无电镍沉积 。

公开(公告)号：US07473640B2

公开(公告)日：2009-01-06

申请号：US10784662

申请日：2004-02-23

申请人： John F. Conley, Jr. ,  Yoshi Ono ,  Wei Gao

发明人： John F. Conley, Jr. ,  Yoshi Ono ,  Wei Gao

IPC分类号： H01L29/72

CPC分类号： H01L21/28079 ,  H01L21/823842 ,  H01L29/4958

摘要： A method, and corresponding transistor structure are provided for protecting the gate electrode from an underlying gate insulator. The method comprises: forming a gate insulator overlying a channel region; forming a first metal barrier overlying the gate insulator, having a thickness of less than 5 nanometers (nm); forming a second metal gate electrode overlying the first metal barrier, having a thickness of greater than 10 nm; and, establishing a gate electrode work function exclusively responsive to the second metal. The second metal gate electrode can be one of the following materials: elementary metals such as p+ poly, n+ poly. Ta, W, Re, RuO2, Pt, Ti, Hf, Zr, Cu, V, Ir, Ni, Mn, Co, NbO, Pd, Mo, TaSiN, and Nb, and binary metals such as WN, TaN, and TiN. The first metal barrier can be a binary metal, such as TaN, TiN, or WN.

摘要翻译： 提供了一种方法和相应的晶体管结构，用于保护栅极免受下层栅极绝缘体的影响。 该方法包括：形成覆盖沟道区的栅极绝缘体; 形成覆盖栅极绝缘体的厚度小于5纳米（nm）的第一金属屏障; 形成覆盖所述第一金属屏障的第二金属栅电极，其厚度大于10nm; 并且建立专门响应于第二金属的栅电极功函数。 第二金属栅电极可以是以下材料之一：元素金属，例如p + poly，n + poly。 Ta，W，Re，RuO 2，Pt，Ti，Hf，Zr，Cu，V，Ir，Ni，Mn，Co，NbO，Pd，Mo，TaSiN和Nb，二元金属如WN，TaN和TiN 。 第一金属屏障可以是二元金属，例如TaN，TiN或WN。

公开(公告)号：US20080314566A1

公开(公告)日：2008-12-25

申请号：US12150583

申请日：2008-04-29

申请人： Li Ming Chen ,  Ting Qiang Xue ,  Wei Gao ,  Ke Cheng Liu

发明人： Li Ming Chen ,  Ting Qiang Xue ,  Wei Gao ,  Ke Cheng Liu

IPC分类号： F28D15/00

CPC分类号： G01R33/28 ,  G01R33/288

摘要： This invention discloses a ventilation system for an MRI system, including: a hydrodynamic rotating device, a primary coolant water pipe, a secondary coolant water pipe, a fan and air outlet; the water outlet of the primary coolant water pipe is connected to the water inlet of the hydrodynamic rotating device, while the water inlet of the secondary coolant water pipe is connected to the water outlet of the hydrodynamic rotating device; with the impetus provided by the coolant water from the primary coolant water pipe, the hydrodynamic rotating device drives the fan near the air outlet to rotate, discharging the coolant water into the secondary coolant water pipe. Furthermore, the invention discloses a ventilation method for an MRI system. Ventilation efficiency is improved significantly with the system and method provided by this invention.

摘要翻译： 本发明公开了一种用于MRI系统的通气系统，包括：流体动力学旋转装置，主冷却水管，二次冷却水管，风扇和空气出口; 主冷却水管的出水口与流体动力旋转装置的入水口连接，二次冷却水管的入水口与流体动力旋转装置的出水口相连; 利用来自主冷却水管的冷却水提供的动力，流体动力旋转装置驱动靠近出气口的风扇旋转，将冷却水排放到二次冷却水管中。 此外，本发明公开了一种MRI系统的通气方法。 通过本发明提供的系统和方法，通风效率显着提高。

公开(公告)号：US20080289252A1

公开(公告)日：2008-11-27

申请号：US12062077

申请日：2008-04-03

申请人： MEE LEN CHYE ,  Shi Xiao ,  Wei Gao

发明人： MEE LEN CHYE ,  Shi Xiao ,  Wei Gao

IPC分类号： C09K17/00 ,  G01N33/20 ,  C12N1/21 ,  C12N5/10 ,  A01H5/00

CPC分类号： C12N15/8259 ,  B09C1/002 ,  B09C1/105 ,  C02F3/327 ,  C02F2101/20 ,  C07K14/415 ,  Y02W10/18

摘要： Methods of using genetically-transformed plants in the phytoremediation of lead are described. Unlike many organisms in which only 10-kDa ACBPs have been identified, there exists a family of six ACBPs in the model plant Arabidopsis. Other than a function in mediating the transfer of acyl-CoA esters in plant lipid metabolism, all six Arabidopsis ACBPs can bind the heavy metal lead and are therefore applicable for phytoremediation. These methods of phytoremediation will provide a cheap, simple and efficient method in the removal of contaminating lead from soil/water/environment by the growth of the ACBP-overexpressing genetically-transformed plants in the contaminated environment. There is also provided a method to remove lead from contaminated water.

摘要翻译： 描述了在植物修复中使用遗传转化植物的方法。 不同于其中仅鉴定了10-kDa ACBP的许多生物体，在模拟植物拟南芥中存在六个ACBP家族。 除了介导植物脂质代谢中酰基辅酶A转移的功能之外，所有六种拟南芥ACBPs都可以结合重金属铅，因此适用于植物修复。 这些植物修复方法将提供一种廉价，简单和有效的方法，通过在受污染环境中的ACBP过量表达的遗传转化植物的生长，从土壤/水/环境中去除污染的铅。 还提供了从污染水中除去铅的方法。

公开(公告)号：US20080197107A1

公开(公告)日：2008-08-21

申请号：US11709008

申请日：2007-02-20

申请人： Wei Gao ,  Bruce D. Ulrich ,  Yoshi Ono

发明人： Wei Gao ,  Bruce D. Ulrich ,  Yoshi Ono

IPC分类号： C25F3/00

CPC分类号： G03F1/68 ,  G03F1/50 ,  G03F1/54

摘要： A method of fabricating a grayscale mask includes preparing a quartz wafer; depositing a layer of Si3N4 on the quartz wafer; depositing a layer of titanium/TEOS directly on the Si3N4 layer on the backside of the quartz wafer; removing the layer of Si3N4 from the front side of the quartz wafer; depositing a layer of SRO directly on the front side of the quartz wafer; patterning a microlens array on the SRO layer; etching the SRO layer to form a microlens array in the SRO layer; depositing a layer of titanium; patterning and etching the titanium layer; depositing a layer of SiOxNy on the SRO microlens array; CMP to planarize the layer of SiOxNy removing the titanium/TEOS layer from the backside of the quartz wafer; bonding the planarized SiOxNy to a quartz reticle plate; and etching to remove Si3N4 from the bonded structure to form a grayscale mask reticle.

摘要翻译： 制造灰度掩模的方法包括制备石英晶片; 在石英晶片上沉积一层Si 3 N 4 N 4; 在石英晶片的背面上的Si 3 N 4 N 4层上直接沉积钛/ TEOS层; 从石英晶片的正面去除Si 3 N 4 N 4层; 在石英晶片的正面上直接沉积SRO层; 在SRO层上构图微透镜阵列; 蚀刻SRO层以在SRO层中形成微透镜阵列; 沉积一层钛; 图案化和蚀刻钛层; 在SRO微透镜阵列上沉积一层SiO 2 x N y O; CMP以平坦化从石英晶片的背面去除钛/ TEOS层的SiO 2 x N y层; 将平坦化的SiO x N N y N键合到石英光罩板上; 以及蚀刻以从结合结构去除Si 3 N 4 N 4以形成灰度掩模掩模版。

公开(公告)号：US20080176392A1

公开(公告)日：2008-07-24

申请号：US11657258

申请日：2007-01-24

申请人： Wei Gao ,  Bruce D. Ulrich ,  Yoshi One ,  Steven R. Droes

发明人： Wei Gao ,  Bruce D. Ulrich ,  Yoshi One ,  Steven R. Droes

IPC分类号： H01L21/44

CPC分类号： G03F1/50 ,  H01L27/14685

摘要： A method of fabricating a grayscale mask includes preparing a silicon wafer; depositing a layer of Si3N4 directly on the silicon wafer; implanting H+ ions into the silicon wafer to form a defect layer; depositing a first layer of SiOxNy directly on the Si3N4 layer; depositing a layer of SRO directly on the first layer of SiOxNy; patterning and etching the SRO layer to form a microlens array in the SRO layer; depositing a second layer of SiOxNy on the SRO microlens array; CMP to planarize the second layer of SiOxNy; bonding and cleaving the planarized SiOxNy to a quartz plate to form a graymask reticle; etching to remove silicon from the bonded structure; etching to remove SiOxNy and Si3N4 from the bonded structure; and cleaning and drying the graymask reticle.

摘要翻译： 制造灰度掩模的方法包括制备硅晶片; 在硅晶片上直接沉积一层Si 3 N 4 N 4; 将H +离子注入到硅晶片中以形成缺陷层; 在Si 3 N 4 N层上直接沉积第一层SiO x N y Y y; 在第一SiO 2层上沉积SRO层; 图案化和蚀刻SRO层以在SRO层中形成微透镜阵列; 在SRO微透镜阵列上沉积第二层SiO x N N y O; CMP以使第二层SiO 2平面化; 将平坦化的SiO x N N y键合并切割成石英板以形成灰色掩模掩模版; 蚀刻以从结合结构去除硅; 蚀刻以从结合的结构去除SiO 2和N 3 N 4和S 3 N 4 N 4; 并清理并干燥灰色掩模。

公开(公告)号：US20080176148A1

公开(公告)日：2008-07-24

申请号：US11657326

申请日：2007-01-24

申请人： Yoshi Ono ,  Bruce D. Ulrich ,  Wei Gao

发明人： Yoshi Ono ,  Bruce D. Ulrich ,  Wei Gao

IPC分类号： G03F1/00

CPC分类号： G03F7/0005 ,  G03F1/50

摘要： A method of fabricating a grayscale reticle includes preparing a quartz wafer substrate; depositing a layer of SRO on the top surface of the quartz substrate; patterning and etching the SRO to form an initial microlens pattern using step-over lithography; patterning and etching the SRO to form a recessed pattern in the SRO; depositing an opaque film on the SRO; patterning and etching the opaque film; depositing and planarizing a planarizing layer; cutting the quartz wafer into rectangular pieces sized to be smaller than a selected blank reticle; bonding the a piece a to selected reticle blank to form a grayscale reticle; and using the grayscale reticle to form a microlens array on a photoimager.

摘要翻译： 制造灰度标线的方法包括制备石英晶片衬底; 在石英衬底的顶表面上沉积SRO层; 图案化和蚀刻SRO以使用逐步光刻形成初始微透镜图案; 图案化和蚀刻SRO以在SRO中形成凹陷图案; 在SRO上沉积不透明膜; 图案化和蚀刻不透明膜; 沉积和平坦化平坦化层; 将石英晶片切割成尺寸小于所选空白掩模版的矩形块; 将片a粘合到所选的掩模版坯料上以形成灰度标线; 并使用灰度标线在光学成像仪上形成微透镜阵列。

公开(公告)号：US20080164569A1

公开(公告)日：2008-07-10

申请号：US11582275

申请日：2006-10-16

申请人： Tingkai Li ,  Wei Gao ,  Yoshi Ono ,  Sheng Teng Hsu

发明人： Tingkai Li ,  Wei Gao ,  Yoshi Ono ,  Sheng Teng Hsu

IPC分类号： H01L29/00

CPC分类号： H01L27/15 ,  H01L33/0004 ,  H01L33/343

摘要： A method of fabricating an electroluminescent device includes, on a prepared substrate, depositing a rare earth-doped silicon-rich layer on gate oxide layer as a light emitting layer; and annealing and oxidizing the structure to repair any damage caused to the rare earth-doped silicon-rich layer; and incorporating the electroluminescent device into a CMOS IC. An electroluminescent device fabricated according to the method of the invention includes a substrate, a rare earth-doped silicon-rich layer formed on the gate oxide layer for emitting a light of a pre-determined wavelength; a top electrode formed on the rare earth-doped silicon-rich layer; and associated CMOS IC structures fabricated thereabout.

摘要翻译： 一种制造电致发光器件的方法包括：在制备的衬底上，在作为发光层的栅极氧化物层上沉积稀土掺杂的富硅层; 并对该结构进行退火和氧化以修复对稀土掺杂的富硅层造成的任何损伤; 并将电致发光器件并入CMOS IC。 根据本发明的方法制造的电致发光器件包括：衬底，形成在栅极氧化物层上的用于发射预定波长的光的稀土掺杂富硅层; 在稀土掺杂的富硅层上形成的顶部电极; 并在其附近制造相关的CMOS IC结构。

公开(公告)号：US07321268B2

公开(公告)日：2008-01-22

申请号：US11377735

申请日：2006-03-16

申请人： Ronald Chang ,  Sheng Yen ,  Wei Gao

发明人： Ronald Chang ,  Sheng Yen ,  Wei Gao

IPC分类号： H03B21/01 ,  H03B21/02 ,  H03L7/16 ,  H04B1/26

CPC分类号： H03L7/16 ,  H03B21/02 ,  H04B1/7136

摘要： A frequency synthesizer with a single PLL and multiple SSB mixers is presented. The frequency synthesizer includes a single PLL outputting a reference signal that is fed to a plurality of dividers coupled in sequence. The outputs from the dividers are mixed by the SSB mixers to produce signals with different frequencies. These signals with different frequencies can be selected through use of multiple selectors.

摘要翻译： 提出了具有单个PLL和多个SSB混频器的频率合成器。 频率合成器包括单个PLL，其输出被馈送到依次耦合的多个分频器的参考信号。 分频器的输出由SSB混频器混合，产生不同频率的信号。 可以通过使用多个选择器来选择具有不同频率的这些信号。