公开(公告)号：US20210151621A1

公开(公告)日：2021-05-20

申请号：US16686973

申请日：2019-11-18

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Steven M. Shank ,  Vibhor Jain ,  Anthony K. Stamper ,  John J. Ellis-Monaghan ,  John J. Pekarik

IPC: H01L31/074 ,  H01L31/028 ,  H01L31/18

Abstract: Structures including a photodetector and methods of fabricating such structures. The photodetector is positioned over the top surface of the substrate. The photodetector includes a portion of a semiconductor layer comprised of a semiconductor alloy, a p-type doped region in the portion of the semiconductor layer, and an n-type doped region in the portion of the semiconductor layer. The p-type doped region and the n-type doped region converge along a p-n junction. The portion of the semiconductor layer has a first side and a second side opposite from the first side. The semiconductor alloy has a composition that is laterally graded from the first side to the second side of the portion of the semiconductor layer.

公开(公告)号：US11004878B2

公开(公告)日：2021-05-11

申请号：US16544074

申请日：2019-08-19

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Anthony K. Stamper ,  Vibhor Jain ,  Steven M. Shank ,  John J. Ellis-Monaghan ,  John J. Pekarik

IPC: H01L27/144 ,  H01L29/04 ,  H01L29/165 ,  H01L29/737 ,  H01L29/06 ,  H01L29/66 ,  H01L31/02 ,  H01L31/105 ,  H01L31/18 ,  H01L31/0312 ,  G01S7/481 ,  H03F3/08

Abstract: Structures including a photodiode and methods of fabricating such structures. A substrate has a top surface, a well, and a trench extending from the top surface to the well. A photodiode is positioned in the trench. The photodiode includes an electrode that is provided by a first portion of the well. A bipolar junction transistor has an emitter that is positioned over the top surface of the substrate and a subcollector that is positioned below the top surface of the substrate. The subcollector is provided by a second portion of the well.