摘要:
An electrostatic discharge (ESD) protection circuit which forms part of an integrated circuit having a VDD line and a VSS line, and which includes an ESD transient detection circuit connected between the VDD and VSS lines; and an electrostatic discharge circuit driven by the transient detection circuit and connected between the VDD and VSS lines, wherein the discharge circuit includes a bipolar transistor having an emitter and a collector, one of which is electrically connected to the VDD line and the other of which is electrically connected to the VSS line, wherein the bipolar transistor is implemented by a structure selected from a group consisting of a vertical bipolar transistor and a field oxide device, and wherein the bipolar transistor has a base that is driven by the transient detection circuit.
摘要:
An electrostatic discharge protection network which diverts ESD stress arising between any two contact pads of an IC device, in order to prevent damage to the internal circuitry of the IC device. An ESD discharge bus is arranged around the periphery of an IC chip. Between each IC pad and the discharge bus, there is a protection circuit to directly bypass an ESD stress arising at any two IC pads. Each ESD protection circuit includes a diode, a thick-oxide device, a resistor, and a capacitor. The protection circuit is operated in snapback mode without causing breakdown. Therefore, the triggering voltage of the ESD protection circuit is lowered to the level of the snapback voltage but not to the level of the breakdown voltage.
摘要:
An ESD protection circuit with leakage current reduction function includes a silicon controlled rectifier, a first CMOS inverter, a first transistor, a current mirror, a PMOS capacitor and a resistor. The first CMOS inverter electrically connects with the silicon controlled rectifier. The first transistor comprises a first end, a second end and a third end, wherein the first end electrically connects with the silicon controlled rectifier and the first CMOS inverter, and the current mirror electrically connects with the third end of the first transistor. The PMOS capacitor electrically connects with the current mirror, and the resistor electrically connects with the first CMOS inverter, the second end of the first transistor and the PMOS capacitor.
摘要:
An output buffer with process and temperature compensation comprises an enable terminal, a clock generator, a PMOS threshold voltage detector, an NMOS threshold voltage detector, a first comparator, a second comparator, a first compensation code generator, a second compensation code generator and an output buffer stage, wherein the output buffer stage has an output stage, the output buffer stage means for controlling a drive current generated by the output stage, wherein the output stage has a first voltage output terminal, and the modulated drive current is capable of compensating slew rate of the first voltage output terminal.
摘要:
An ESD protection circuit with multiple domains, which comprises: an ESD protection device, coupled between a first power supplying line and a first ground line; a first internal circuit, having a first terminal coupled to the first power supplying line; a first switch, coupled between a second terminal of the first internal circuit and a second ground line; and a first ESD detection circuit, coupled to the first switch, for detecting an ESD signal, and controls the first switch to be non-conductive when the ESD signal occurs.
摘要:
A noise filter circuit for an IC is provided. The noise filter circuit comprises a decoupling unit coupled to a power pad of the IC and a current amplifier circuit coupled to the decoupling unit and the power pad of the IC. The decoupling unit generates a first current in response to a transient voltage being on the power pad of the IC. The current amplifier circuit drains a second current from the power pad of the IC according to the first current.
摘要:
Gamma voltage conversion device includes a gamma voltage conversion circuit, an amplifier, and a gamma voltage adjusting circuit. The gamma voltage conversion circuit generates a first gamma voltage conformed to a first gamma curve according to a grey level. The amplifier includes a first input end receiving the first gamma voltage, a second end, and an output end. The amplifier outputs the first or a second gamma voltage conformed to a second gamma curve according to the grey level according to the first and the second ends of the amplifier. The gamma voltage adjusting circuit coupled between the second input end and the output end of the amplifier controls the amplifier to output the first or the second gamma voltage as the gamma driving voltage according to the grey level and a gamma curve selection signal.
摘要:
An ESD protection circuit with multiple domains, which comprises: an ESD protection device, coupled between a first power supplying line and a first ground line; a first internal circuit, having a first terminal coupled to the first power supplying line; a first switch, coupled between a second terminal of the first internal circuit and a second ground line; and a first ESD detection circuit, coupled to the first switch, for detecting an ESD signal, and controls the first switch to be non-conductive when the ESD signal occurs.
摘要:
An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.
摘要:
An active loading-reduction device is provided for a circuit. The circuit has functional circuitry coupled to a terminal to receive an alternating voltage. The circuit also has an electrostatic discharge protector that is coupled to the terminal. The active loading-reduction device includes active circuitry that is adapted to be coupled to a power supply to provide a reactance to counteract a reactance provided by the electrostatic discharge protector at the terminal of the circuit.