公开(公告)号：US5369539A

公开(公告)日：1994-11-29

申请号：US780937

申请日：1991-10-23

申请人： Osamu Shimizu

发明人： Osamu Shimizu

IPC分类号： G11B5/127 ,  G11B5/17 ,  G11B5/31 ,  G11B5/147

CPC分类号： G11B5/3116 ,  G11B5/3109 ,  Y10T29/49044 ,  Y10T29/49064

摘要： A thin film magnetic head in which at least a magnetic layer, a conductor layer constituting a coil and an insulating layer (or layers) are formed and patterned to a predetermined shape on a substrate, wherein the conductor layer is formed of a Cu--Ag alloy of Cu.sub.100-x Ag.sub.x where 0.1.ltoreq.x.ltoreq.10 in atomic percent. The gap surface has a surface irregularity level not exceeding 350 Angstroms at Rmax and the conductor layer has a resistivity of 2 .mu..OMEGA. cm or less even after heat treatment at 450.degree. to 550.degree. C.

摘要翻译： 一种薄膜磁头，其中至少形成磁性层，构成线圈的导体层和绝缘层（或多个层），并在基板上形成图案化为预定形状，其中导体层由Cu-Ag Cu100-xAgx的合金，其中0.1≤x≤10原子％。 间隙表面在Rmax处的表面不规则度不超过350埃，即使在450℃至550℃下热处理之后，导体层的电阻率也为2MΩEGAcm以下。

公开(公告)号：US5351111A

公开(公告)日：1994-09-27

申请号：US142990

申请日：1993-10-29

申请人： Akihiro Takafuji ,  Osamu Shimizu

发明人： Akihiro Takafuji ,  Osamu Shimizu

IPC分类号： G03G15/02 ,  H01T19/00

CPC分类号： H01T19/00 ,  G03G15/0291

摘要： A corona discharge device includes a corona discharge electrode, and a control electrode interposed between the corona discharge electrode and a target object to be corona discharged for controlling a surface potential of the target object. The control electrode includes a film coating processed portion with a conductive dry film coating and an unprocessed portion with no film coating formed in at least one of two end portions of the control electrode in a longitudinal direction of the control electrode. The unprocessed portion of the control electrode has an opening ratio smaller than that of the film coating processed portion.

摘要翻译： 电晕放电装置包括电晕放电电极和插在电晕放电电极和目标物体之间的电晕放电用于控制目标物体的表面电位的控制电极。 控制电极包括在控制电极的纵向方向上的控制电极的两个端部中的至少一个中形成有导电干膜涂层的膜涂覆处理部分和没有膜涂层的未处理部分。 控制电极的未处理部分的开口率小于薄膜涂布处理部分的开口率。

公开(公告)号：US5159514A

公开(公告)日：1992-10-27

申请号：US263292

申请日：1988-10-27

申请人： Osamu Shimizu ,  Joy Ueoka

发明人： Osamu Shimizu ,  Joy Ueoka

IPC分类号： G11B5/31

CPC分类号： G11B5/3106

摘要： An economical and reliable film magnetic head comprises magnetic layers, a coil conductor layer, insulating layers, and a protective layer formed on a substrate, with copper electrode pads connected to the coil conductor layer. A layer of Ti or Cr is formed on the surface of each electrode pad, preventing the copper electrode pads from corroding.

摘要翻译： 经济可靠的薄膜磁头包括磁性层，线圈导体层，绝缘层和形成在衬底上的保护层，铜电极焊盘连接到线圈导体层。 在每个电极焊盘的表面上形成Ti或Cr层，防止铜电极焊盘腐蚀。

公开(公告)号：US5130878A

公开(公告)日：1992-07-14

申请号：US496717

申请日：1990-03-07

申请人： Daisuke Mitsuhashi ,  Noboru Kawasaki ,  Osamu Shimizu ,  Satoshi Yoshida ,  Takashi Kubo

发明人： Daisuke Mitsuhashi ,  Noboru Kawasaki ,  Osamu Shimizu ,  Satoshi Yoshida ,  Takashi Kubo

IPC分类号： G11B5/31 ,  G11B17/32

CPC分类号： G11B17/32 ,  G11B5/3106

摘要： A regulating plate disposed opposite to a magnetic head with respect to a rotary flexible magnetic disk and in sliding contact with the flexible magnetic disk, having protruding portions provided on the regulating plate at upstream and downstream sides of the magnetic head, top portions of the protruding portions being formed to flat surfaces, thereby obtaining stable sliding contact of the magnetic head with the flexible magnetic disk from the beginning, and a thin film magnetic head comprised at least of a magnetic layer, a coil conductor layer, and an insulative layer formed on a substrate, and a protective layer stacked on the magnetic layer, characterized in that the protective layer comprises MgO, SiO.sub.2, and Al.sub.2 O.sub.3.

摘要翻译： 调节板，相对于旋转的柔性磁盘与磁头相对设置并与柔性磁盘滑动接触，在磁头的上游侧和下游侧具有设置在调节板上的突出部分，突出部分的顶部 部分形成为平坦表面，从而从头开始获得磁头与柔性磁盘的稳定的滑动接触，以及至少包括磁性层，线圈导体层和绝缘层的薄膜磁头， 衬底和层叠在所述磁性层上的保护层，其特征在于，所述保护层包括MgO，SiO 2和Al 2 O 3。

公开(公告)号：USD321527S

公开(公告)日：1991-11-12

申请号：US332781

申请日：1989-04-03

申请人： Shigeru Kurozumi ,  Kazuo Tsujimoto ,  Osamu Shimizu

设计人： Shigeru Kurozumi ,  Kazuo Tsujimoto ,  Osamu Shimizu

公开(公告)号：USD308373S

公开(公告)日：1990-06-05

申请号：US271074

申请日：1988-11-14

申请人： Osamu Shimizu

设计人： Osamu Shimizu

公开(公告)号：US4833519A

公开(公告)日：1989-05-23

申请号：US049917

申请日：1987-05-15

申请人： Michiari Kawano ,  Masayuki Higashimoto ,  Shigeo Kashiwagi ,  Jun Nakano ,  Osamu Shimizu

发明人： Michiari Kawano ,  Masayuki Higashimoto ,  Shigeo Kashiwagi ,  Jun Nakano ,  Osamu Shimizu

IPC分类号： H01L21/285 ,  H01L21/768

CPC分类号： H01L21/76877 ,  H01L21/28525 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76847 ,  H01L21/76849

摘要： A method and apparatus are disclosed for improving step coverage of a wiring layer of a semiconductor device especially at the contact holes thereof. The inside of the contact holes are covered by a polysilicon layer deposited by chemical vapor deposition (CVD), and selectively doped with impurities having the same conductivity type as the contact region which the polysilicon layer contacts at the bottom of the contact hole. The remaining part of the contact hole is buried with SiO.sub.2, and the wiring layer is formed on it. Since the step coverage of the material deposited by CVD is very good, the disconnection at the side walls of the contact hole is avoided. Further, short circuits caused by growth of spikes of eutectic of silicon and aluminum is also avoided. If the surface of the polysilicon layer is covered with a thin film of SiO.sub.2 or Si.sub.3 N.sub.4, the material to bury the contact hole may be replaced by other materials such as polysilicon or amorphous silicon. Further, a barrier layer may be provided between the wiring layer and the polysilicon layer. This prevents the migration of aluminum over the polysilicon, so that the reliability of the wiring is further improved. The barrier layer is made from a silicide of high melting point metal or the metal itself. This improves the conduction between the contact region and the wiring layer.

公开(公告)号：US3950656A

公开(公告)日：1976-04-13

申请号：US501962

申请日：1974-08-30

申请人： Shizuo Sumida ,  Kazuo Nii ,  Osamu Shimizu ,  Atsushi Ueda ,  Mitsuaki Ishii

发明人： Shizuo Sumida ,  Kazuo Nii ,  Osamu Shimizu ,  Atsushi Ueda ,  Mitsuaki Ishii

IPC分类号： G01R31/02 ,  G01R31/00 ,  H01H9/54 ,  H03K5/22 ,  H03K5/20

CPC分类号： H03K5/22

摘要： State detecting apparatus comprising: first, second and third terminals, first and second potential detecting circuits each having an input and an output, a resistance, means connecting the inputs of the first and second potential detecting circuits to the first terminal, means connecting the resistance between the first terminal and a power source, means connecting the output of the first potential detecting circuit to the second terminal, means connecting the output of the second potential detecting circuit to the third terminal.