公开(公告)号：US2860096A

公开(公告)日：1958-11-11

申请号：US51573255

申请日：1955-06-15

Applicant: IONICS

Inventor： WALTER JUDA ,  HAMERSCHLAG ALLAN H

IPC: C08F8/44

CPC classification number: C08F8/44 ,  C08F226/06 ,  C08F212/02

公开(公告)号：US2800445A

公开(公告)日：1957-07-23

申请号：US28407852

申请日：1952-04-24

Applicant: IONICS

Inventor： THACHER CLARKE JOHN

IPC: C08J5/22

CPC classification number: C08J5/2243 ,  C08J2353/02

公开(公告)号：US2785955A

公开(公告)日：1957-03-19

申请号：US28452452

申请日：1952-04-26

Applicant: IONICS

Inventor： WILLIAM POTTER ,  EDGARDO PARSI

IPC: D21C11/00

CPC classification number: D21C11/005

公开(公告)号：US2780604A

公开(公告)日：1957-02-05

申请号：US33274653

申请日：1953-01-22

Applicant: IONICS

Inventor： CLARKE JOHN T ,  HAMERSCHLAG ALLAN H

IPC: C07C209/08 ,  C08F26/00

CPC classification number: C07C209/08 ,  C08F26/00 ,  Y10S526/923

公开(公告)号：US2778714A

公开(公告)日：1957-01-22

申请号：US28460452

申请日：1952-04-26

Applicant: IONICS

Inventor： KASPER ANDREW A ,  KATZ WILLIAM E

IPC: B01J47/10 ,  D21C11/00

CPC classification number: D21C11/005 ,  B01J47/10 ,  Y10S423/03

公开(公告)号：US2731425A

公开(公告)日：1956-01-17

申请号：US22054451

申请日：1951-04-11

Applicant: IONICS

Inventor： WALTER JUDA ,  KASPER ANDREW A

IPC: C08J5/22

CPC classification number: C08J5/2256 ,  C08J2323/02

公开(公告)号：US2654017A

公开(公告)日：1953-09-29

申请号：US20943551

申请日：1951-02-05

Applicant: IONICS

Inventor： WESLEY HICKS WILLIAM

IPC: F24H3/00

CPC classification number: F24H3/002

公开(公告)号：US20240242959A1

公开(公告)日：2024-07-18

申请号：US18541778

申请日：2023-12-15

Applicant: Infineon Technologies Austria AG ,  Oxford Ionics Limited

Inventor： Clemens Rössler ,  Clemens Matthiesen ,  Chris Ballance

IPC: H01J49/42

CPC classification number: H01J49/424 ,  H01J49/429

Abstract: A micro-fabricated device for controlling trapped ions includes a substrate of a dielectric material or a semiconductor material. A structured electrode layer is disposed above the substrate. The structured electrode layer forms a plurality of electrodes of an ion trap configured to trap ions in a space above the structured electrode layer. The structured electrode layer includes a low phonon density of states layer, referred to as low-PDOS layer, the low-PDOS layer being of TiN or TiW or Ti or W and having a thickness of equal to or greater than 100 nm.

公开(公告)号：US10923310B2

公开(公告)日：2021-02-16

申请号：US16485084

申请日：2018-02-12

Applicant: IONICS FRANCE

Inventor： Denis Busardo ,  Frédéric Guernalec

IPC: H01J37/08 ,  G02B1/113 ,  H01J37/317 ,  G06F3/041

Abstract: Process for treatment of a sapphire part with a beam of a mixture of mono- and multicharged ions of a gas which are produced by an electron cyclotron resonance (ECR) source, where: the voltage for acceleration of the ions is between 10 kV and 100 kV; the implanted dose, expressed in ions/cm2, is between (5×1016)×(M/14)−1/2 and 1017×(M/14)−1/2, where M is the atomic mass of the ion; the rate of displacement VD, expressed in cm/s, is between 0.025×(P/D) and 0.1×(P/D), where P is the power of the beam, expressed in W (watts), and D is the diameter of the beam, expressed in cm (centimetres). A part made of sapphire having a high transmittance and which is resistant to scratching is thus advantageously obtained.

公开(公告)号：US10737242B2

公开(公告)日：2020-08-11

申请号：US15967475

申请日：2018-04-30

Applicant: IONICS FRANCE

Inventor： Denis Busardo ,  Frederic Guernalec

IPC: B01J23/10 ,  C04B35/50 ,  C01G25/00 ,  C01F17/206 ,  B01J37/34

Abstract: A method of treating a powder (P) made from cerium oxide using an ion beam (F) in which: —the powder is stirred once or a plurality of times; —the ions of the ion beam are selected from the ions of the elements of the list consisting of helium (He), boron (B), carbon (C), nitrogen (N), oxygen (O), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe)—the acceleration voltage of the ions of the beam is between 10 kV and 1000 kV; —the treatment temperature of the powder (P) is less than or equal to Tf/3; —the ion dose per mass unit of powder to be treated is chosen from a range of between 1016 ions/g and 1022 ions/cm2 so as to lower the reduction temperature of the powder made from cerium oxide (P).