Abstract:
Techniques for determining and a computing device configured to determine a quantum Karnaugh map through decomposing a quantum circuit into a multiple number of sub-circuits are provided. Also, techniques for obtaining and a computing device configured to obtain a quantum circuit which includes the minimum number of gates among possible quantum circuits corresponding to a quantum Karnaugh map are also provided.
Abstract:
A method and an apparatus for playing broadcast content in a broadcasting system are provided. The method and the apparatus enable a viewer to watch an entire event by broadcasting the event through different networks in a condition that the event may not be broadcast from start to finish over a single broadcasting network.
Abstract:
Provided is an accelerator provided in an electronic device and configured to perform simultaneous localization and mapping (SLAM), the accelerator including a factor graph database, a memory, and a back-end processor, wherein the back-end processor is configured to receive a first piece of data corresponding to map points and camera positions from the factor graph database, convert the received first piece of data into a matrix for the map points and a matrix for the camera positions, store, in the memory, results obtained by performing an optimization calculation on the matrix for the map points and a matrix for at least one camera position, among the camera positions, corresponding to the map points, and obtain a second piece of data optimized with respect to the first piece of data based on the results stored in the memory.
Abstract:
A triboelectric nanogenerator (TENG) using a 3D-spacer fabric and polydimethylsiloxane (PDMS) shows great application potential for biokinetic energy harvesting and a multifunctional self-power device. In the present disclosure, a TENG with a fabric-PDMS-fabric structure is fabricated using diverse three-dimensional (3D) fabrics and PDMS. Peak-to-peak output voltages of the diverse 3D-spacer fabrics are compared. The output voltages are changed due to structures and vertical fibers. In addition, a coefficient of surface friction between PDMS and fabric improves the output voltage. TENGs using different 3D-spacer polymeric fabrics show different maximum peak-to-peak output voltage performances. This is due to the stiffness, lateral elasticity, and 3D morphology of the fabrics. It is considered that those factors including the stiffness, the lateral elasticity, and the 3D morphology influence the densities in vertical and lateral fiber-to-fiber interaction.
Abstract:
A filter for air purification includes an air-permeable body frame and a photocatalyst member provided in the body frame. The photocatalyst member includes at least one mesh slit and a plurality of bead layers disposed on both sides of the mesh slit to be spaced apart from each other wherein the bead layers include a plurality of photocatalyst-containing beads aligned in a single layer to be spaced apart from each other at regular intervals.
Abstract:
The importance of architectural asymmetry is investigated to improve the output voltage of TENGs with polyester/spandex blend three-dimensional (3D) spacer fabrics. Different types of TENGs are fabricated by stacking the 3D spacer fabrics, polydimethylsiloxane (PDMS) films, and electrodes with different stack configurations. The 3D spacer fabric TENGs fabricated with higher architectural asymmetry show higher output voltages than those fabricated with lower architectural asymmetry. In particular, the TENG with the PDMS/fabric/fabric configuration shows the highest peak-to-peak output voltage among all types. An increase in the TENG output voltage is attributed to the relatively high architectural asymmetry in the device configuration and the relatively high effective density of triboelectric charge.
Abstract:
Organic polymer semiconductor-based polymer solar cells (PSCs) have attracted considerable research interest due to having excellent electrical, structural, optical, mechanical, and chemical properties. In the past 20 years, considerable efforts have been made to develop PSCs. Generally, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is used as a hole transport layer (HTL) of the PSC to enhance hole extraction efficiency, but highly acidic PEDOT:PSS destroys an indium tin oxide (ITO) electrode and an active layer and thus reduces the lifetime of the device. To avoid this problem, some attempts have been made to develop inverted PSCs having different electron transport layers (ETLs). However, such a device has limited power conversion efficiency (PCE) due to low electron mobility of the ETL. Therefore, attempts have been made to enhance the PCE of inverted PSCs using indium gallium zinc oxide (IGZO) having optimized indium (In), gallium (Ga), and zinc (Zn) contents. Accordingly, inverted PSCs that have ZnO or IGZO (having varying In:Ga:Zn molar ratios) as an ETL and have an ITO/ETL/PTB7:PC71BM/MoO3/Al structure have been constructed. The PCE of the inverted PSC can be increased from 6.22% to 8.72% using IGZO having an optimized weight ratio of In, Ga, and Zn.
Abstract:
An information management apparatus may include a storage device that separately stores ontology information of an intelligent robot that provides a service and includes a plurality of repositories each having meta information. A storage management device sorts and stores ontology information of the intelligent robot in the plurality of repositories based on a prefix of the ontology information of the intelligent robot and the meta information.
Abstract:
PSS-doped polyaniline (PANI), which is inexpensive, less acidic, and stable in water, is used as a hole transport material (HTM) of an organic photovoltaic (OPV) cell for efficiently collecting energy from indoor lighting. Therefore, the organic photovoltaic cell exhibits a transmittance of 90% or more. Also, a solar cell according to the present invention has improved environmental stability.
Abstract:
The present invention discloses a Quantum Fourier Transformation (QFT) circuit and a method of forming the QFT circuit capable of reducing the number of T-count and T-depth. The method of forming a QFT circuit comprises moving Hadamard gate (H-gate) of an even-numbered qubits to the earliest stage where there is no quantum entanglement with other qubits, in a standard n (n is a natural number greater than or equal to 5) qubit QFT, decomposing quantum circuit into a form in which Rz gate is implemented, using quantum addition, and reducing a number of Rz gate layers using ancilla qubits.