Abstract:
This invention presents a fast and effective method to detect macromolecules such as peptides. Using a multifunctional chiral monomer, it combines molecular imprinting polymerization technology with a quartz crystal microbalance for detection of peptides to the ng/ml scale.
Abstract:
A carrier is adapted for a vertical blind assembly that includes an elongate blind headrail extending in a longitudinal direction, a spacer unit and a vertical slat. The spacer unit includes two spacer rods intersecting each other. The carrier includes a carrier body configured with an inner receiving space and having a top side formed with a top opening in spatial communication with the inner receiving space, a bottom side, opposite lateral sides, and front and rear sides each being disposed with a rolling wheel that is engaged slidably in the blind headrail. A pivot seat is mounted detachably on the top side of the carrier body, and has an upright pivot pin connected pivotally to intersecting portions of the spacer rods. A slat-holding member is mounted detachably on the bottom side and holds the vertical slat.
Abstract:
A slat for a window blind includes a slat body made of a foamed plastic, and at least one reinforcing rib embedded in the slat body. The reinforcing rib is made of a non-foamed plastic, and extends along the length of the slat body so as to enhance the overall strength of the slat body.
Abstract:
A rotary cutting device for a processing machine has a rotary cutter holder provided with an angle-adjusting device and a height-adjusting device. The angle-adjusting device is able to adjust the position of the rotary cutter of the rotary cutter base at any angle, and the height-adjusting device able to adjust the height of the rotary cutter base for matching with the shape and the position of a work piece A power unit is installed on the rotary cutter base for supplying the rotary cutter with power. A clamping device for a processing machine is provided with a clamping unit base having a clamping unit provided with an upper and a lower clamping member. The clamping unit base is provided with a power unit for adjusting the clamping distance between the two clamping members.
Abstract:
A method for reducing leakage current in a semiconductor structure is disclosed. One or more dielectric layers are formed on a semiconductor substrate, on which at least one device is constructed. A hydrogen-containing layer is formed over the dielectric layers. A silicon nitride passivation layer covers the dielectric layers and the hydrogen-containing layer. The hydrogen atoms of the hydrogen-containing layer are introduced into the dielectric layers without being blocked by the silicon nitride layer, thereby reducing leakage current therein.
Abstract:
This invention relates to biotechnology, more particularly, to an improved liposomal drug delivery system. Liposomes treated with or incorporating a surface active dopant, such as those containing polymers or oligomers of ethylene glycol as their hydrophilic “headgroup” component, have strongly increased permeabilizability when exposed to ultrasound. Permeabilizability was measured by the rate of release of self-quenching fluorescent dye at concentrations that caused no increase in permeability in the absence of ultrasound. The surface active dopants reached maximal effectiveness at about 1% of their critical micelle concentration. As disclosed by the present invention, surface active dopants, such as a PEG-lipid and a PLURONIC® triblock copolymer and a PEG-PBLA block copolymer, can be irreversibly incorporated into liposomes to give formulations for use as drug delivery vehicles.
Abstract:
An atomic layer deposition method for forming a microelectronic layer employs a reactor chamber pressure of greater than about 500 mtorr and more preferably from about 20 to about 50 torr. By employing a reactor chamber pressure within the foregoing range, the microelectronic layer is formed with an enhanced deposition rate while employing the atomic layer deposition method, due to a gas phase chemical vapor deposition component to the atomic layer deposition method.
Abstract:
The present disclosure pertains to the discovery that TiN films having a thickness of greater than about 400 Å and, particularly greater than 1000 Å, and a resistivity of less than about 175 &mgr;&OHgr;cm, can be produced by a CVD technique in which a series of TiN layers are deposited to form a desired TiN film thickness. Each layer is deposited employing a CVD deposition/treatment step. During a treatment step, residual halogen (typically chlorine) was removed from the CVD deposited film. Specifically, a TiN film having a thickness of greater than about 400 Å was prepared by a multi deposition/treatment step process where individual TiN layers having a thickness of less than 400 Å were produced in series to provide a finished TiN layer having a combined desired thickness. Each individual TiN layer was CVD deposited and then treated by exposing the TiN surface to ammonia in an annealing step carried out in an ammonia ambient. The TiN film formed in this manner not only had a resistivity of less than about 175 &mgr;&OHgr;cm, but was substantially free of micro cracks as well, including films having a thickness greater than 1,000 Å.
Abstract:
The present invention is a method of wafer processing which improves the reliability of an integrated titanium (Ti)/titanium nitride (TiN) CVD film formed from a reaction of titanium tetrachloride (TiCi4) and ammonia (NH3). A Ti film is subject to a treatment of NH3 gas to render the Ti film unreactive towards attack by chlorine and hydrogen chloride. A thin seed layer of TiN film is deposited upon the treated Ti film using a thermal TiCl4/NH3 reaction. Subsequent TiN film deposition upon the seed layer results in a successful integration of a Ti/TiN film stack for a Ti film thickness up to about 300 Å.
Abstract:
A method for improving accuracy of dimensional measurements of a touch trigger probe. The method includes moving a touch trigger probe in an approach direction toward an object, contacting a contact point on the object with a portion of the touch trigger probe, generating a trigger signal corresponding to coordinates of the contact point after the touch trigger probe travels a pretraveled distance, and adjusting the coordinates to compensate for the pretravel. The adjusting step compensates for bending of the touch trigger probe and the bending is calculated as a function of trigger force derived from contact forces of a kinematic seating arrangement of the touch trigger probe. The method is effective in compensating for variations in trigger force due to the approach direction commonly referred to as lobing. The method is applicable to straight and non-straight touch trigger probes.