Vertical blind carrier
    132.
    发明申请
    Vertical blind carrier 审中-公开
    垂直襟翼

    公开(公告)号:US20080202704A1

    公开(公告)日:2008-08-28

    申请号:US11710997

    申请日:2007-02-27

    Applicant: Ya-Yin Lin

    Inventor: Ya-Yin Lin

    CPC classification number: E06B9/36

    Abstract: A carrier is adapted for a vertical blind assembly that includes an elongate blind headrail extending in a longitudinal direction, a spacer unit and a vertical slat. The spacer unit includes two spacer rods intersecting each other. The carrier includes a carrier body configured with an inner receiving space and having a top side formed with a top opening in spatial communication with the inner receiving space, a bottom side, opposite lateral sides, and front and rear sides each being disposed with a rolling wheel that is engaged slidably in the blind headrail. A pivot seat is mounted detachably on the top side of the carrier body, and has an upright pivot pin connected pivotally to intersecting portions of the spacer rods. A slat-holding member is mounted detachably on the bottom side and holds the vertical slat.

    Abstract translation: 托架适用于垂直的盲组件,其包括沿纵向方向延伸的细长盲头栏杆,间隔单元和垂直板条。 间隔单元包括彼此相交的两个隔离杆。 载体包括:承载体,其构造有内部容纳空间,并且具有形成有与内部容纳空间空间连通的顶部开口的顶面,底侧,相对的侧面以及前后两侧各自设置有滚动 可滑动地接合在盲头轨道中的车轮。 枢轴座可拆卸地安装在承载体的顶侧,并且具有枢转地连接到间隔棒的相交部分的直立枢轴销。 板条保持构件可拆卸地安装在底侧并保持垂直板条。

    SLAT FOR A WINDOW BLIND
    133.
    发明申请
    SLAT FOR A WINDOW BLIND 审中-公开
    SLAT FOR WINDOW BLIND

    公开(公告)号:US20080093036A1

    公开(公告)日:2008-04-24

    申请号:US11551399

    申请日:2006-10-20

    Applicant: Ya-Yin Lin

    Inventor: Ya-Yin Lin

    CPC classification number: E06B9/386

    Abstract: A slat for a window blind includes a slat body made of a foamed plastic, and at least one reinforcing rib embedded in the slat body. The reinforcing rib is made of a non-foamed plastic, and extends along the length of the slat body so as to enhance the overall strength of the slat body.

    Abstract translation: 用于窗帘的板条包括由泡沫塑料制成的板条体,以及嵌入板条主体中的至少一个加强肋。 加强肋由非发泡塑料制成,并且沿着板条主体的长度延伸,以增强板条主体的整体强度。

    Rotary cutting and clamping device for a processing machine
    134.
    发明申请
    Rotary cutting and clamping device for a processing machine 审中-公开
    用于加工机器的旋转切割和夹紧装置

    公开(公告)号:US20070044620A1

    公开(公告)日:2007-03-01

    申请号:US11218088

    申请日:2005-08-31

    Applicant: Chun-Yin Lin

    Inventor: Chun-Yin Lin

    CPC classification number: B23Q16/025 Y10T83/929

    Abstract: A rotary cutting device for a processing machine has a rotary cutter holder provided with an angle-adjusting device and a height-adjusting device. The angle-adjusting device is able to adjust the position of the rotary cutter of the rotary cutter base at any angle, and the height-adjusting device able to adjust the height of the rotary cutter base for matching with the shape and the position of a work piece A power unit is installed on the rotary cutter base for supplying the rotary cutter with power. A clamping device for a processing machine is provided with a clamping unit base having a clamping unit provided with an upper and a lower clamping member. The clamping unit base is provided with a power unit for adjusting the clamping distance between the two clamping members.

    Abstract translation: 一种用于加工机械的旋转切割装置具有设置有角度调节装置和高度调节装置的旋转刀架。 角度调节装置能够以任意角度调整旋转刀具基座的旋转刀具的位置,并且能够调节旋转刀具基座的高度以与其形状和位置匹配的高度调节装置 工件一个动力单元安装在旋转刀具底座上,用于为旋转刀具供电。 一种用于加工机器的夹紧装置设置有夹紧单元基座,该夹紧单元基座具有设置有上部和下部夹紧构件的夹紧单元。 夹紧单元基座设置有用于调节两个夹紧构件之间的夹紧距离的动力单元。

    Method for reducing leakage current in a semiconductor device
    135.
    发明申请
    Method for reducing leakage current in a semiconductor device 有权
    减少半导体器件漏电流的方法

    公开(公告)号:US20060278959A1

    公开(公告)日:2006-12-14

    申请号:US11149575

    申请日:2005-06-10

    Abstract: A method for reducing leakage current in a semiconductor structure is disclosed. One or more dielectric layers are formed on a semiconductor substrate, on which at least one device is constructed. A hydrogen-containing layer is formed over the dielectric layers. A silicon nitride passivation layer covers the dielectric layers and the hydrogen-containing layer. The hydrogen atoms of the hydrogen-containing layer are introduced into the dielectric layers without being blocked by the silicon nitride layer, thereby reducing leakage current therein.

    Abstract translation: 公开了一种用于减小半导体结构中的漏电流的方法。 一个或多个电介质层形成在半导体衬底上,其上构造有至少一个器件。 在电介质层上形成含氢层。 氮化硅钝化层覆盖电介质层和含氢层。 含氢层的氢原子被引入到电介质层中而不被氮化硅层阻挡,从而减少其中的漏电流。

    Responsive liposomes for ultrasonic drug delivery
    136.
    发明申请
    Responsive liposomes for ultrasonic drug delivery 审中-公开
    响应性脂质体用于超声药物递送

    公开(公告)号:US20060002994A1

    公开(公告)日:2006-01-05

    申请号:US11087142

    申请日:2005-03-23

    CPC classification number: A61K9/127 A61K9/0009 A61K9/1272

    Abstract: This invention relates to biotechnology, more particularly, to an improved liposomal drug delivery system. Liposomes treated with or incorporating a surface active dopant, such as those containing polymers or oligomers of ethylene glycol as their hydrophilic “headgroup” component, have strongly increased permeabilizability when exposed to ultrasound. Permeabilizability was measured by the rate of release of self-quenching fluorescent dye at concentrations that caused no increase in permeability in the absence of ultrasound. The surface active dopants reached maximal effectiveness at about 1% of their critical micelle concentration. As disclosed by the present invention, surface active dopants, such as a PEG-lipid and a PLURONIC® triblock copolymer and a PEG-PBLA block copolymer, can be irreversibly incorporated into liposomes to give formulations for use as drug delivery vehicles.

    Abstract translation: 本发明涉及生物技术,更具体地涉及改进的脂质体药物递送系统。 用或掺入表面活性掺杂剂的脂质体,例如含有乙二醇的聚合物或低聚物作为其亲水性“头组”组分的脂质体当暴露于超声波时具有强烈增加的透化性。 通过在不存在超声波的情况下不引起渗透性增加的浓度的自熄荧光染料的释放速率来测量渗透性。 表面活性掺杂剂在其临界胶束浓度的约1%下达到最大的有效性。 如本发明所公开的,表面活性掺杂剂例如PEG-脂质和三嵌段共聚物和PEG-PBLA嵌段共聚物可以不可逆地掺入脂质体中以得到用作药物递送载体的制剂。

    Atomic layer deposition (ALD) method with enhanced deposition rate
    137.
    发明申请
    Atomic layer deposition (ALD) method with enhanced deposition rate 有权
    原子层沉积(ALD)方法具有提高的沉积速率

    公开(公告)号:US20050070041A1

    公开(公告)日:2005-03-31

    申请号:US10672778

    申请日:2003-09-26

    CPC classification number: H01L21/0228 C23C16/45527 H01L21/3141

    Abstract: An atomic layer deposition method for forming a microelectronic layer employs a reactor chamber pressure of greater than about 500 mtorr and more preferably from about 20 to about 50 torr. By employing a reactor chamber pressure within the foregoing range, the microelectronic layer is formed with an enhanced deposition rate while employing the atomic layer deposition method, due to a gas phase chemical vapor deposition component to the atomic layer deposition method.

    Abstract translation: 用于形成微电子层的原子层沉积方法采用的反应器室压力大于约500mtorr,更优选为约20至约50托。 通过采用上述范围内的反应室压力,由于采用原子层沉积方法的气相化学气相沉积成分,由于采用原子层沉积法,所以微电子层以增加的沉积速率形成。

    Method for the CVD deposition of a low residual halogen content multi-layered titanium nitride film having a combined thickness greater than 1000 Å
    138.
    发明授权
    Method for the CVD deposition of a low residual halogen content multi-layered titanium nitride film having a combined thickness greater than 1000 Å 失效
    用于沉积具有大于1000的组合厚度的低残留卤素含量多层氮化钛膜的CVD沉积的方法

    公开(公告)号:US06436820B1

    公开(公告)日:2002-08-20

    申请号:US09497787

    申请日:2000-02-03

    CPC classification number: H01L21/28568 C23C16/34 C23C16/56

    Abstract: The present disclosure pertains to the discovery that TiN films having a thickness of greater than about 400 Å and, particularly greater than 1000 Å, and a resistivity of less than about 175 &mgr;&OHgr;cm, can be produced by a CVD technique in which a series of TiN layers are deposited to form a desired TiN film thickness. Each layer is deposited employing a CVD deposition/treatment step. During a treatment step, residual halogen (typically chlorine) was removed from the CVD deposited film. Specifically, a TiN film having a thickness of greater than about 400 Å was prepared by a multi deposition/treatment step process where individual TiN layers having a thickness of less than 400 Å were produced in series to provide a finished TiN layer having a combined desired thickness. Each individual TiN layer was CVD deposited and then treated by exposing the TiN surface to ammonia in an annealing step carried out in an ammonia ambient. The TiN film formed in this manner not only had a resistivity of less than about 175 &mgr;&OHgr;cm, but was substantially free of micro cracks as well, including films having a thickness greater than 1,000 Å.

    Abstract translation: 本公开涉及通过CVD技术产生厚度大于约400埃,特别是大于1000埃,电阻率小于约175微米/厘米3的TiN膜的发现,其中一系列TiN 沉积层以形成期望的TiN膜厚度。 使用CVD沉积/处理步骤沉积各层。 在处理步骤中,从CVD沉积膜去除残留的卤素(通常为氯)。 具体地,通过多次沉积/处理步骤工艺制备具有大于约400埃厚度的TiN膜,其中制备具有小于400的厚度的单独TiN层以提供具有组合所需的成品TiN层 厚度。 每个单独的TiN层被CVD沉积,然后通过在氨环境中进行的退火步骤中将TiN表面暴露于氨进行处理。 以这种方式形成的TiN膜不仅具有小于约175μOMEGA·cm的电阻率,而且基本上没有微裂纹,包括厚度大于的的膜。

    Method of performing titanium/titanium nitride integration
    139.
    发明授权
    Method of performing titanium/titanium nitride integration 失效
    执行钛/氮化钛整合的方法

    公开(公告)号:US06221174B1

    公开(公告)日:2001-04-24

    申请号:US09248869

    申请日:1999-02-11

    CPC classification number: C23C16/0281 H01L21/28568

    Abstract: The present invention is a method of wafer processing which improves the reliability of an integrated titanium (Ti)/titanium nitride (TiN) CVD film formed from a reaction of titanium tetrachloride (TiCi4) and ammonia (NH3). A Ti film is subject to a treatment of NH3 gas to render the Ti film unreactive towards attack by chlorine and hydrogen chloride. A thin seed layer of TiN film is deposited upon the treated Ti film using a thermal TiCl4/NH3 reaction. Subsequent TiN film deposition upon the seed layer results in a successful integration of a Ti/TiN film stack for a Ti film thickness up to about 300 Å.

    Abstract translation: 本发明是提高由四氯化钛(TiCi4)和氨(NH3)的反应形成的钛(Ti)/氮化钛(TiN)CVD膜的一体化的可靠性的晶片处理方法。 对Ti膜进行NH 3气处理,使Ti膜不受氯和氯化氢侵蚀。 使用热TiCl 4 / NH 3反应将TiN膜的薄晶种层沉积在处理的Ti膜上。 随后在种子层上的TiN膜沉积导致Ti / TiN膜叠层的成功整合,使Ti膜厚度达到约300。

    Method of improving accuracy of touch trigger probe
    140.
    发明授权
    Method of improving accuracy of touch trigger probe 失效
    提高触发式探头精度的方法

    公开(公告)号:US5657549A

    公开(公告)日:1997-08-19

    申请号:US538952

    申请日:1995-10-04

    CPC classification number: G01B21/045

    Abstract: A method for improving accuracy of dimensional measurements of a touch trigger probe. The method includes moving a touch trigger probe in an approach direction toward an object, contacting a contact point on the object with a portion of the touch trigger probe, generating a trigger signal corresponding to coordinates of the contact point after the touch trigger probe travels a pretraveled distance, and adjusting the coordinates to compensate for the pretravel. The adjusting step compensates for bending of the touch trigger probe and the bending is calculated as a function of trigger force derived from contact forces of a kinematic seating arrangement of the touch trigger probe. The method is effective in compensating for variations in trigger force due to the approach direction commonly referred to as lobing. The method is applicable to straight and non-straight touch trigger probes.

    Abstract translation: 一种用于提高触摸式触发式探头尺寸测量精度的方法。 该方法包括将接触触发探针沿接近方向移动到物体上,将物体上的接触点与触摸触发探针的一部分接触,产生对应于触摸探针探测器行进之后接触点的坐标的触发信号 预先行驶距离,并调整坐标以补偿预行程。 调节步骤补偿触摸触发式探头的弯曲,并且根据由触摸式触发式探头的运动学座椅装置的接触力导出的触发力来计算弯曲。 该方法有效地补偿由于通常被称为lobing的进近方向引起的触发力的变化。 该方法适用于直接和非直接触发式探头。

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