公开(公告)号：US11062667B2

公开(公告)日：2021-07-13

申请号：US15819347

申请日：2017-11-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Susumu Kawashima ,  Kouhei Toyotaka ,  Kei Takahashi

IPC: G09G3/36 ,  G06F3/041 ,  G02F1/1333 ,  G02F1/1368 ,  G06F3/044

Abstract: A display device that achieves both high-accuracy sensing by a touch sensor unit and smooth input using the touch sensor unit is provided. The display device includes a display unit and the touch sensor unit. The touch sensor unit performs touch sensing operation at a different timing from display image rewriting by the display unit, whereby the high-accuracy sensing can be achieved. The display unit has a function of rewriting a display image only in a region that needs to be rewritten. In the case where the entire display region is not necessarily rewritten, the time for the sensing operation by the touch sensor unit can be lengthened, whereby the smooth input can be achieved.

公开(公告)号：US11013087B2

公开(公告)日：2021-05-18

申请号：US13783809

申请日：2013-03-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kouhei Toyotaka ,  Koji Kusunoki

IPC: G11C19/28 ,  H05B47/10 ,  G09G3/3233 ,  G09G3/3266

Abstract: Provided is a light-emitting device which can prevent appearance of an after-image after power on. Before or after supply of a power voltage applied to a light-emitting element is cut, a potential of a gate electrode of a transistor controlling the supply of the power voltage to the light-emitting element is initialized. Specifically, in the case where the transistor is n-channel type, the potential of the gate electrode is initialized so that a gate voltage is equal to or lower than a threshold voltage. In the case where the transistor is p-channel type, the potential of the gate electrode is initialized so that the gate voltage is equal to or higher than the threshold voltage.

公开(公告)号：US11004983B2

公开(公告)日：2021-05-11

申请号：US16778336

申请日：2020-01-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kosei Noda ,  Kouhei Toyotaka ,  Kazunori Watanabe ,  Hikaru Harada

IPC: H01L29/786 ,  H01L27/108 ,  H01L27/11 ,  H01L49/02 ,  H01L27/12 ,  G06F15/76 ,  H01L29/24 ,  H01L29/417 ,  H01L29/423

Abstract: An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.

公开(公告)号：US20210026176A1

公开(公告)日：2021-01-28

申请号：US17042326

申请日：2019-03-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kouhei Toyotaka ,  Koji KUSUNOKI

IPC: G02F1/1368 ,  H01L27/12

Abstract: A highly visible display device is provided. The display device includes a transistor, a first conductive layer, a second conductive layer, and a third conductive layer. The channel width of the transistor is greater than or equal to 30 μm and less than or equal to 1000 μm. The transistor includes 2 to 50 semiconductor layers, each of which includes a first region, a second region, and a channel formation region. The channel formation region has a region overlapping overlaps with the first conductive layer. The first region overlaps with the second conductive layer and does not overlap with the first conductive layer. The second region overlaps with the third conductive layer and does not overlap with the first conductive layer. The third conductive layer has a function of transmitting visible light, and the second region and the third conductive layer in a stacked state have a function of transmitting visible light.

公开(公告)号：US10777682B2

公开(公告)日：2020-09-15

申请号：US16121700

申请日：2018-09-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kouhei Toyotaka ,  Masashi Tsubuku ,  Kosei Noda ,  Hideaki Kuwabara

IPC: H01L29/24 ,  H01L29/786 ,  H01L27/12 ,  H01L29/26 ,  G06K19/077 ,  H01L21/8236 ,  H01L23/66 ,  H01L27/088 ,  H01L29/66 ,  G11C7/00 ,  G11C19/28 ,  H02M3/07

Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

公开(公告)号：US10475869B2

公开(公告)日：2019-11-12

申请号：US15681844

申请日：2017-08-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kouhei Toyotaka ,  Hiroyuki Miyake

IPC: G02F1/136 ,  H01L27/32 ,  G02F1/1362 ,  H01L29/786 ,  G02F1/1335 ,  H01L27/12 ,  H01L51/05

Abstract: A display device with high luminance and excellent white balance is provided. The display device includes a first display element, a second display element, a first transistor, and a second transistor. The first display element includes a light-emitting layer and is electrically connected to the first transistor. The first transistor includes a first semiconductor film, a first gate electrode and a second gate electrode facing each other with the first semiconductor film provided therebetween, and a first source electrode and a first drain electrode over and in contact with the first semiconductor film. The second gate electrode is electrically connected to the first source electrode or the first drain electrode. The second display element includes a light-emitting layer and is electrically connected to the second transistor. The second transistor includes a second semiconductor film, and a third gate electrode and a fourth gate electrode facing each other with the second semiconductor film provided therebetween. The fourth gate electrode is electrically connected to the third gate electrode.

公开(公告)号：US10330993B2

公开(公告)日：2019-06-25

申请号：US15841866

申请日：2017-12-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kouhei Toyotaka

IPC: H01L27/32 ,  H01L51/52 ,  G02F1/1333 ,  G02F1/1343

Abstract: A display device having high display quality is provided. In the display device including a plurality of pixels, adjacent pixel electrodes are formed over different insulating layers. Accordingly, when seen in a plan view, the adjacent pixel electrodes can be close to each other without constraints of design rules. Openings (light-emitting regions) of the adjacent pixels can be close to each other, leading to an improvement in graininess of an image. With the use of a step provided between the adjacent pixel electrodes, the resistance of an EL layer across the adjacent pixels can be increased to reduce crosstalk.

公开(公告)号：US10139663B2

公开(公告)日：2018-11-27

申请号：US15153077

申请日：2016-05-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideaki Shishido ,  Koji Kusunoki ,  Kouhei Toyotaka ,  Kazunori Watanabe ,  Makoto Kaneyasu

IPC: G02F1/1335 ,  G02F1/1333 ,  G06F3/041 ,  G06F3/044 ,  G02F1/1362 ,  G02F1/1343

Abstract: An input/output device is provided. The input/output device includes a first pixel electrode, a second pixel electrode, a first common electrode, a second common electrode, a liquid crystal, a first insulating film, a second insulating film, and a transistor. The first common electrode can serve as one electrode of a sensor element. The second common electrode can serve as the other electrode of the sensor element. The transistor includes a first gate, a second gate, and a semiconductor layer. The pixel electrode, the common electrodes, and the second gate are positioned on different planes. The second gate contains one or more kinds of metal elements included in the semiconductor layer. The second gate, the pixel electrode, and the common electrodes preferably contain one or more kinds of metal elements included in the semiconductor layer.

公开(公告)号：US10103275B2

公开(公告)日：2018-10-16

申请号：US15609513

申请日：2017-05-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake ,  Kei Takahashi ,  Kouhei Toyotaka ,  Masashi Tsubuku ,  Kosei Noda ,  Hideaki Kuwabara

IPC: H01L29/78 ,  H01L21/84 ,  H01L29/786 ,  H01L23/552 ,  H01L23/66 ,  H01L25/16 ,  H01L27/02 ,  H01L27/108 ,  H01L27/12 ,  H01L49/02 ,  H01L23/60

Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized.

公开(公告)号：US10083991B2

公开(公告)日：2018-09-25

申请号：US15375453

申请日：2016-12-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kouhei Toyotaka ,  Kei Takahashi ,  Hideaki Shishido ,  Koji Kusunoki

IPC: H01L27/12 ,  H01L29/04 ,  H01L29/49 ,  H01L29/786 ,  H01L27/32

CPC classification number: H01L27/1225 ,  H01L27/124 ,  H01L27/1266 ,  H01L27/3262 ,  H01L27/3272 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/78648 ,  H01L29/7869

Abstract: A novel display device or the like in which a transistor connected to a scan line has small gate capacitance is provided. A novel display device or the like in which a scan line has low resistance is provided. A novel display device or the like in which pixels can be arranged with high density is provided. A novel display device or the like that can be manufactured without an increase in cost is provided. In a transistor including a first gate electrode and a second gate electrode, the first gate electrode is formed using a metal material with low resistance and the second gate electrode is formed using a metal oxide material that can reduce oxygen vacancies in an oxide semiconductor layer. The first gate electrode is connected to the scan line, and the second gate electrode is connected to a wiring to which a constant potential is supplied.