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131.发明授权
公开(公告)号：US5332695A
公开(公告)日：1994-07-26
申请号：US65761
申请日：1993-05-24
申请人： Kimio Shigihara , Yutaka Nagai , Toshitaka Aoyagi
发明人： Kimio Shigihara , Yutaka Nagai , Toshitaka Aoyagi
IPC分类号： H01L23/14 , H01L21/28 , H01L21/48 , H01L21/52 , H01L23/36 , H01L23/373 , H01L29/43 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/042 , H01L21/60
CPC分类号： H01L23/3738 , H01L21/4882 , H01L2224/45144 , H01L2224/48463 , H01L2224/73265 , H01S5/0021 , H01S5/02272 , H01S5/02484 , H01S5/0425
摘要： A semiconductor device having a semiconductor element and a heat sink radiating heat generated by the semiconductor element incudes an amorphous semiconductor film disposed on the heat sink and the semiconductor element disposed on the amorphous semiconductor film. Therefore, the stress applied to the semiconductor element is reduced because of the amorphous semiconductor film. In one structure, an amorphous semiconductor film comprising amorphous silicon or amorphous germanium is sandwiched between first and second metal films and the semiconductor element is bonded to the second metal film. An ohmic contact is made by alloys formed between the amorphous semiconductor film and the first and second metal films.
摘要翻译： 具有半导体元件和由半导体元件产生的辐射热的散热器的半导体器件包括设置在散热器上的非晶半导体膜和设置在非晶半导体膜上的半导体元件。 因此，由于非晶半导体膜，施加到半导体元件的应力减小。 在一种结构中，包含非晶硅或非晶锗的非晶半导体膜被夹在第一和第二金属膜之间，并且半导体元件被接合到第二金属膜。 由非晶半导体膜与第一和第二金属膜之间形成的合金制成欧姆接触。
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公开(公告)号：US4176009A
公开(公告)日：1979-11-27
申请号：US853302
申请日：1977-11-21
CPC分类号： C07K5/0808 , C07K14/78 , Y10S930/28
摘要： A method of measuring collagenase activity using as substrates peptide derivatives having the structure A-Pro-B-Gly-C-Ala-Gly-E wherein A is a hydrophobic neutral or acidic chromophore, B is an amino acid residue, C is Ile or Leu, E is Gln-D-Arg-OH or D-Arg-OH and all the amino acid residues except for Gly are L-configuration unless otherwise stated.
摘要翻译： 使用具有结构A-Pro-B-Gly-C-Ala-Gly-E的底物肽衍生物测定胶原酶活性的方法，其中A是疏水性中性或酸性发色团，B是氨基酸残基，C是Ile或 Leu，E是Gln-D-Arg-OH或D-Arg-OH，除Gly以外的所有氨基酸残基均为L-构型，除非另有说明。
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