公开(公告)号：US4629898A

公开(公告)日：1986-12-16

申请号：US541719

申请日：1983-10-13

Applicant: Jonathan H. Orloff ,  Lynwood W. Swanson

Inventor： Jonathan H. Orloff ,  Lynwood W. Swanson

IPC: H01J37/04 ,  H01J37/08 ,  H01J37/12 ,  H01J37/30 ,  H01J3/18

CPC classification number: H01J37/12 ,  H01J37/04 ,  H01J37/08 ,  H01J37/3007 ,  H01J2237/0807

Abstract: A three element asymmetric lens system having a very low chromatic aberration coefficient is used in conjunction with a TFE electron source having an angular intensity of approximately 10.sup.-3 amperes per steradian to achieve precise focusing of the resulting electron beam despite the large energy spread thereof for beam, accelerating ratios in the range from 0.2 to 6.0. In one embodiment, an FI ion source is used in conjunction with the same type of lens system to initially visualize the surface of the integrated circuit. The ion beam then is rapidly focused on and scanned across a small area of passivation over an underlying metal conductor to sputter a hole through the passivation layer to the metal. A secondary electron collecting apparatus detects a large increase in the secondary electron emission when the ion beam reaches the metal. The electron beam then is scanned across the surface of the integrated circuit. The resulting secondary electrons are collected, amplified and input to the intensity control of a CRT, resulting in a display in which the brightness of the location of the milled hole accurately represents the voltage of the metal conductor.

Abstract translation: 与具有非常低色差系数的三元非对称透镜系统结合使用具有大约10-3安培角度强度的每个球面度的TFE电子源，以实现所得电子束的精确聚焦，尽管其大的能量扩散用于 光束，加速比在0.2到6.0的范围内。 在一个实施例中，FI离子源与相同类型的透镜系统一起使用以最初可视化集成电路的表面。 然后，离子束被快速聚焦并穿过下面的金属导体上的小的钝化区域扫描，以将穿过钝化层的孔溅射到金属。 二次电子收集装置检测当离子束到达金属时二次电子发射的大量增加。 然后电子束在集成电路的表面上扫描。 所得到的二次电子被收集，放大并输入到CRT的强度控制，导致显示，其中铣孔位置的亮度准确地表示金属导体的电压。

公开(公告)号：US4338548A

公开(公告)日：1982-07-06

申请号：US116895

申请日：1980-01-30

Applicant: David C. Bono ,  Marvin Fishbein ,  Kenneth J. Harte

Inventor： David C. Bono ,  Marvin Fishbein ,  Kenneth J. Harte

IPC: H01J3/18 ,  H01J37/12 ,  H01J37/305 ,  H01J37/317 ,  H01J29/58

CPC classification number: H01J37/12 ,  H01J3/18

Abstract: A unipotential electrostatic lens and method of operation for charged particle beam tubes of the electron beam, compound fly's eye type having both coarse and fine deflection sections wherein the objective lens assembly may lack coaxial symmetry about the lens axis. The unipotential lens comprises an assembly of axially aligned electrostatic lens elements with each lens element having an array of micro lenslet apertures and with each set of axially aligned micro lenslet apertures forming a micro lenslet. Preferably, there are three such lens elements in the assembly with a high voltage excitation potential supplied to the center lens element. A dynamic focus correction potential derived from the deflection potentials applied to the tube is supplied to the entrance outer lens element closest to the electron gun of the beam tube. The remaining outer lens element is maintained at system ground reference potential. In preferred arrangements, a fixed offset potential is added to the high voltage excitation potential supplied to the center lens element and a compensating offset potential is supplied to the entrance outer lens element along with the dynamic focusing correction potential to thereby distribute and minimize the effect of deflection sweep and astigmatism errors which otherwise might be introduced by the uncompensated dynamic focus correction potential.

Abstract translation: 用于电子束的带电粒子束管的单电位静电透镜和操作方法，具有粗略偏转部分和精细偏转部分的复合蝇眼类型，其中物镜组件可能不具有围绕透镜轴的同轴对称性。 单能透镜包括轴向对准的静电透镜元件的组件，每个透镜元件具有微孔镜孔的阵列，并且每组轴向对准的微小孔小孔形成微小透镜。 优选地，在组件中有三个这样的透镜元件，其具有供给中心透镜元件的高电压激励电位。 从施加到管的偏转电位得到的动态聚焦校正电位被提供给最靠近光束管的电子枪的入射外透镜元件。 剩余的外部透镜元件保持在系统接地参考电位。 在优选的布置中，向提供给中心透镜元件的高电压激励电位添加固定的偏移电位，并且补偿偏移电势与动态聚焦校正电位一起被提供给入射外透镜元件，从而分布并最小化 偏转扫描和散光误差，否则可能由未补偿的动态聚焦校正电位引入。