CAPACITIVE MEMS DEVICE WITH PROGRAMMABLE OFFSET VOLTAGE CONTROL
    142.
    发明申请
    CAPACITIVE MEMS DEVICE WITH PROGRAMMABLE OFFSET VOLTAGE CONTROL 失效
    具有可编程偏移电压控制的电容式MEMS器件

    公开(公告)号:US20090122384A1

    公开(公告)日:2009-05-14

    申请号:US11938673

    申请日:2007-11-12

    CPC classification number: B81B3/0086 B81B2201/045 G02B26/001 G11C23/00

    Abstract: A capacitive MEMS device is formed having a material between electrodes that traps and retains charges. The material can be realized in several configurations. It can be a multilayer dielectric stack with regions of different band gap energies or band energy levels. The dielectric materials can be trappy itself, i.e. when defects or trap sites are pre-fabricated in the material. Another configuration involves a thin layer of a conductive material with the energy level in the forbidden gap of the dielectric layer. The device may be programmed (i.e. offset and threshold voltages pre-set) by a method making advantageous use of charge storage in the material, wherein the interferometric modulator is pre-charged in such a way that the hysteresis curve shifts, and the actuation voltage threshold of the modulator is significantly lowered. During programming phase, charge transfer between the electrodes and the materials can be performed by applying voltage to the electrodes (i.e. applying electrical field across the material) or by UV-illumination and injection of electrical charges over the energy barrier. The interferometric modulator may then be retained in an actuated state with a significantly lower actuation voltage, thereby saving power.

    Abstract translation: 形成电容MEMS器件,其具有陷阱并保持电荷的电极之间的材料。 该材料可以在几种配置中实现。 它可以是具有不同带隙能量或带能级的区域的多层电介质叠层。 电介质材料本身可以是歪斜的,即当在材料中预先制造缺陷或捕获位置时。 另一种结构涉及导电材料的薄层,其中电介质层的禁止间隙具有能级。 可以通过有利地使用材料中的电荷存储的方法来对器件进行编程(即,偏移和阈值电压预设),其中干涉式调制器以滞后曲线偏移的方式预充电,并且致动电压 调制器的阈值显着降低。 在编程阶段期间,电极和材料之间的电荷转移可以通过向电极施加电压(即跨越材料施加电场)或通过UV照射和在能量屏障上注入电荷来执行。 然后干涉式调制器可以以明显更低的致动电压保持在致动状态,从而节省功率。

    INTEGRATED ELECTRICAL CROSS-TALK WALLS FOR ELECTROSTATIC MEMS
    143.
    发明申请
    INTEGRATED ELECTRICAL CROSS-TALK WALLS FOR ELECTROSTATIC MEMS 有权
    用于静电MEMS的集成电气交叉口墙

    公开(公告)号:US20090071708A1

    公开(公告)日:2009-03-19

    申请号:US12184288

    申请日:2008-08-01

    CPC classification number: B81B3/0021 B81B2201/045

    Abstract: To reduce cross-talk between adjacent hot electrodes, the present invention provides a ground plane, which extends beneath each side of a MEMS mirror platform covering opposite edges of a hot electrode along each side thereof. The ground plane includes an overhang section extending between the mirror platform and the hot electrode forming a first gap between the hot electrode and the overhang section, and a second gap between the overhang section and the mirror platform. The method of the present invention enables highly accurate construction using lithographic patterning and deep reactive ion etching (DRIE).

    Abstract translation: 为了减少相邻热电极之间的串扰,本发明提供了一个接地平面,该接地平面在MEMS反射镜平台的每一侧延伸,覆盖热电极的每一侧的相对边缘。 接地面包括在反射镜平台和热电极之间延伸的突出部分,其在热电极和突出部分之间形成第一间隙,并且在突出部分和反射镜平台之间形成第二间隙。 本发明的方法能够使用光刻图案和深反应离子蚀刻(DRIE)进行高精度的构造。

    Optical microelectromechantical structure
    144.
    发明授权
    Optical microelectromechantical structure 失效
    光学微电子结构

    公开(公告)号:US07489837B2

    公开(公告)日:2009-02-10

    申请号:US10559310

    申请日:2003-06-06

    CPC classification number: B81C3/008 B81B2201/045 B81C2203/0109 G02B26/02

    Abstract: The invention relates to an optical microelectromechanical structure (MEMS) comprising—an (at least one) optically transmissive layer (UTL)—an (at least one) intermediate layer structure (IL)—a (at least one) device layer (DL) said intermediate layer structure (IL) defining one or more optical paths (OP) between said substantially optically transmissive layer (UTL) and said device layer (DL), said intermediate structure layer (IL) defining the distance (d) between said optically transmissive layer (UTL) and said device layer (DL).

    Abstract translation: 本发明涉及一种光学微机电结构(MEMS),其包括 - (至少一个)光学透射层(UTL) - (至少一个)中间层结构(IL)-a(至少一个)器件层(DL) 所述中间层结构(IL)限定所述基本光学透射层(UTL)和所述器件层(DL)之间的一个或多个光路(OP),所述中间结构层(IL)限定所述光学透射 层(UTL)和所述设备层(DL)。

    Microminiature moving device and method of making the same
    145.
    发明授权
    Microminiature moving device and method of making the same 失效
    微型移动装置及其制作方法

    公开(公告)号:US07476948B2

    公开(公告)日:2009-01-13

    申请号:US11069184

    申请日:2005-02-28

    Abstract: In a microminiature moving device that has disposed, on a single-crystal silicon substrate, movable elements (a movable rod 46, a movable comb electrode 49, etc.) displaceable in parallel to the substrate surface and stationary parts (a stationary part 40a, etc.), the stationary parts are fixedly secured to the single-crystal silicon substrate 61 with an insulating layer 62 sandwiched therebetween, and depressions 64 are formed in those surface regions of the single-crystal silicon substrate 61 where no stationary parts are present, and the movable parts are positioned above the depressions 64. The depressions 64 form gaps 50 large enough to prevent foreign bodies from causing troubles such as malfunction of the movable parts and shoring.

    Abstract translation: 在微单元移动装置中,在单晶硅基板上设置可移动的元件(可动杆46,活动梳状电极49等),其可平行于基板表面和静止部分(静止部分40a, 等等)时,固定部分被固定地固定在单晶硅衬底61上,绝缘层62夹在它们之间,在单晶硅衬底61的不存在静止部分的那些表面区域形成凹陷64, 并且可动部件位于凹部64的上方。凹部64形成足够大的间隙50,以防止异物引起诸如可移动部件和支撑件的故障的麻烦。

    Method of making microminiature moving device
    146.
    发明授权
    Method of making microminiature moving device 失效
    制作微型移动装置的方法

    公开(公告)号:US07476561B2

    公开(公告)日:2009-01-13

    申请号:US11407468

    申请日:2006-04-19

    Abstract: In a microminiature moving device that has disposed, on a single-crystal silicon substrate, movable elements (a movable rod 46, a movable comb electrode 49, etc.) displaceable in parallel to the substrate surface and stationary parts (a stationary part 40a, etc.), the stationary parts are fixedly secured to the single-crystal silicon substrate 61 with an insulating layer 62 sandwiched therebetween, and depressions 64 are formed in those surface regions of the single-crystal silicon substrate 61 where no stationary parts are present, and the movable parts are positioned above the depressions 64. The depressions 64 form gaps 50 large enough to prevent foreign bodies from causing troubles such as malfunction of the movable parts and shoring.

    Abstract translation: 在微单元移动装置中,在单晶硅基板上设置可移动的元件(可动杆46,活动梳状电极49等),其可平行于基板表面和静止部分(静止部分40a, 等等)时,固定部分被固定地固定在单晶硅衬底61上,绝缘层62夹在它们之间,在单晶硅衬底61的不存在静止部分的那些表面区域形成凹陷64, 并且可动部件位于凹部64的上方。凹部64形成足够大的间隙50,以防止异物引起诸如可移动部件和支撑件的故障的麻烦。

    MEMS ACTUATOR WITH DISCRETELY CONTROLLED MULTIPLE MOTIONS
    147.
    发明申请
    MEMS ACTUATOR WITH DISCRETELY CONTROLLED MULTIPLE MOTIONS 有权
    具有异步控制的多动作的MEMS执行器

    公开(公告)号:US20080309190A1

    公开(公告)日:2008-12-18

    申请号:US11762683

    申请日:2007-06-13

    CPC classification number: B81B3/0062 B81B2201/037 B81B2201/045

    Abstract: A MEMS (micro electro mechanical system) actuator with discretely controlled multiple motions comprises bottom layer, stepper plate, support, and motion plate. The multiple motion of the motion plate is generated by the electrostatically actuated stepper plates and geometrically predetermined supports. By introducing the MEMS actuator with discretely controlled multiple motions, simple motion control can be achieved by digital controlling and only single voltage is needed for motion control of the motion plate.

    Abstract translation: 具有离散控制的多个运动的MEMS(微机电系统)致动器包括底层,步进板,支撑和运动板。 运动板的多重运动由静电驱动的步进板和几何预定的支撑件产生。 通过引入具有离散控制的多个运动的MEMS致动器,可以通过数字控制实现简单的运动控制,并且仅需要运动控制板的单个电压。

    MICRO-ELECTRO-MECHANICAL-SYSTEM MICROMIRRORS FOR HIGH FILL FACTOR ARRAYS AND METHOD THEREFORE
    148.
    发明申请
    MICRO-ELECTRO-MECHANICAL-SYSTEM MICROMIRRORS FOR HIGH FILL FACTOR ARRAYS AND METHOD THEREFORE 有权
    用于高填充因子阵列的微电子机械系统微型计算机及其方法

    公开(公告)号:US20080151345A1

    公开(公告)日:2008-06-26

    申请号:US11950721

    申请日:2007-12-05

    Applicant: Tiansheng Zhou

    Inventor: Tiansheng Zhou

    CPC classification number: B81B3/004 B81B2201/045 G02B26/0841

    Abstract: A micro-electro-mechanical-system (MEMS) micromirror for use in high fill factor arrays which includes at least one stationary body and a movable body. The movable body has opposed ends and is secured to the stationary body at each of the opposed ends by a resilient primary axis pivot. A mirror support is supported by and movable with the movable body. The mirror support has a first unfettered side and a second unfettered side. A primary axis actuator is provided including a fixed portion connected to the stationary body, and a movable portion corrected to the movable body. The movable portion is adapted to move away from the fixed portion in response to an electrical potential difference between the fixed portion and the movable portion, such that the movable body rotates about the primary axis resilient pivot. A mirror is supported by the mirror support.

    Abstract translation: 一种用于高填充因子阵列的微电子机械系统(MEMS)微镜,其包括至少一个固定体和可移动体。 可移动体具有相对的端部,并且通过弹性主轴枢轴在每个相对的端部处固定到固定体。 反射镜支撑件由可移动体支撑并可移动。 镜子支架具有第一个不受约束的侧面和第二个不受约束的侧面。 主轴致动器设置有连接到固定体的固定部分和校正到可移动体的可动部分。 可移动部分适于响应于固定部分和可移动部分之间的电势差而远离固定部分移动,使得可移动体围绕主轴线弹性枢轴旋转。 镜像支持支持镜像。

    MANUFACTURING METHOD FOR STRESS COMPENSATED X-Y GIMBALED MEMS MIRROR ARRAY
    149.
    发明申请
    MANUFACTURING METHOD FOR STRESS COMPENSATED X-Y GIMBALED MEMS MIRROR ARRAY 有权
    用于应力补偿的X-Y GIMBALED MEMS MIRROR ARRAY的制造方法

    公开(公告)号:US20080130081A1

    公开(公告)日:2008-06-05

    申请号:US11950400

    申请日:2007-12-04

    Abstract: A wafer-level manufacturing method produces stress compensated x-y gimbaled comb-driven MEMS mirror arrays using two SOI wafers and a single carrier wafer. MEMS structures such as comb drives, springs, and optical surfaces are formed by processing front substrate layer surfaces of the SOI wafers, bonding together the processed surfaces, and removing the unprocessed SOI layers to expose second surfaces of the front substrate layers for further wafer-level processing. The bonded SOI wafers are mounted to a surface of the carrier wafer that has been separately processed. Processing wafer surfaces may include formation of a stress compensation layer to counteract physical effects of MEMS mirrors to be formed in a subsequent step. The method may form multi-layered conductive spring structures for the mirrors, each spring having a first conducting layer for energizing a comb drive, a second conducting layer imparting a restoring force, and an insulating layer between the first and second conducting layers.

    Abstract translation: 晶片级制造方法使用两个SOI晶片和单载体晶片产生应力补偿的x-y万向节梳状驱动的MEMS反射镜阵列。 MEMS结构如梳形驱动器,弹簧和光学表面是通过处理SOI晶片的前衬底层表面,将处理后的表面结合在一起而形成的,并且去除未处理的SOI层以暴露前衬底层的第二表面, 级处理。 结合的SOI晶片被安装到已经分开处理的载体晶片的表面上。 处理晶片表面可以包括形成应力补偿层,以抵消在随后的步骤中形成的MEMS镜的物理效应。 该方法可以形成用于反射镜的多层导电弹簧结构,每个弹簧具有用于激励梳状驱动器的第一导电层,赋予恢复力的第二导电层以及第一和第二导电层之间的绝缘层。

    Energy storage structures using electromechanically active materials for micro electromechanical systems
    150.
    发明申请
    Energy storage structures using electromechanically active materials for micro electromechanical systems 有权
    使用微机电系统的机电活性材料的储能结构

    公开(公告)号:US20070263274A1

    公开(公告)日:2007-11-15

    申请号:US11430651

    申请日:2006-05-09

    CPC classification number: G02B26/0841 B81B3/0054 B81B2201/045 B81B2203/0118

    Abstract: System and method for storing energy using electromechanically active materials in micro electromechanical systems. A preferred embodiment comprises a movable element, an intermediate layer formed under the movable element, and electrical addressing circuitry formed under the intermediate layer. The intermediate layer contains a hinge and at least one flexible member associated with the movable element, with the flexible member comprising a layer made from an electromechanically active material. The electromechanically active material contracts or deforms when an electric field is applied, helping the movable element move from a first position to a second position. The use of the electromechanically active material enables the flexible member to apply a greater force on the movable element to help the movable element overcome stiction.

    Abstract translation: 在微机电系统中使用机电活性材料储存能量的系统和方法。 优选实施例包括可移动元件,形成在可移动元件下方的中间层以及形成在中间层下面的电寻址电路。 中间层包含铰链和与可移动元件相关联的至少一个柔性构件,柔性构件包括由机电活性材料制成的层。 当施加电场时,机电活性物质收缩或变形,帮助可动元件从第一位置移动到第二位置。 使用机电活性材料使得柔性构件能够在可移动元件上施加更大的力以帮助可移动元件克服粘性。

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