公开(公告)号：US5824605A

公开(公告)日：1998-10-20

申请号：US509080

申请日：1995-07-31

Applicant: Ching-Hwa Chen ,  David Liu ,  Mark J. Christensen

Inventor： Ching-Hwa Chen ,  David Liu ,  Mark J. Christensen

IPC: H01J37/32 ,  H05H1/46 ,  H05H1/00

CPC classification number: H01J37/3244 ,  H01J37/321 ,  H05H1/46

Abstract: A gas dispersion window for a plasma etching or plasma deposition reactor including a housing having a chamber in which an article can be treated with plasma. The housing includes at least one inlet port connected to an interior of the chamber through which process gas can be supplied to the chamber. A radiofrequency energy source is arranged to pass radiofrequency energy into the chamber and induce plasma in the interior of the chamber by activating, with an electric field induced by the radiofrequency energy source, process gas supplied to the chamber through the inlet port. A dielectric window formed by spaced apart first and second dielectric members has an inner surface thereof forming part of an inner wall of the chamber. Radiofrequency energy passes from the radiofrequency energy source to the interior of the chamber through the dielectric window. The process gas is supplied to the gap between the first and second dielectric members and passes inwardly into the chamber through gas dispersion holes in the second member.

Abstract translation: 一种用于等离子体蚀刻或等离子体沉积反应器的气体分散窗，其包括具有腔室的壳体，其中可以用等离子体处理制品。 壳体包括连接到室的内部的至少一个入口端口，通过该入口端口可将工艺气体供应到室。 射频能源设置成将射频能量传递到腔室中并且通过由射频能量源引起的电场通过入口端口供应到腔室的处理气体进行激活而在腔室的内部引起等离子体。 由间隔开的第一和第二电介质构件形成的电介质窗口具有形成室的内壁的一部分的内表面。 射频能量通过电介质窗从射频能量传递到腔室的内部。 工艺气体被供应到第一和第二电介质构件之间的间隙，并通过第二构件中的气体分散孔向内进入腔室。

公开(公告)号：US5482880A

公开(公告)日：1996-01-09

申请号：US66816

申请日：1993-05-24

Applicant: Cetin Kaya ,  David Liu

Inventor： Cetin Kaya ,  David Liu

IPC: H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC classification number: H01L27/11517 ,  H01L27/115 ,  H01L29/7886

Abstract: In one embodiment, a non-volatile memory cell structure 10 comprises heavily doped source 11 and drain 12 regions formed in the surface of a semiconductor substrate 8 and separated by a channel region 21. A floating gate 13 is formed over and insulated from the channel region 21 and a control gate 14 is formed over and insulated from the floating gate 13. A lightly doped region 20 is formed in the channel 21 beneath the floating gate 13 and adjoining the source region 11. The lightly doped region 20 is spaced from the surface of said substrate 8. Other embodiments and processes are also disclosed.

Abstract translation: 在一个实施例中，非易失性存储单元结构10包括形成在半导体衬底8的表面中并被沟道区21分隔的重掺杂源极11和漏极12区域。浮置栅极13形成在沟道上并与沟道绝缘 区域21和控制栅极14形成在浮置栅极13之上并与浮动栅极13绝缘。轻掺杂区域20形成在浮置栅极13下方的沟道21中并与源极区域11相邻。轻掺杂区域20与 还公开了其它实施方案和方法。

公开(公告)号：US5368710A

公开(公告)日：1994-11-29

申请号：US038612

申请日：1993-03-29

Applicant: Ching-Hwa Chen ,  David Liu ,  Duc Tran

Inventor： Ching-Hwa Chen ,  David Liu ,  Duc Tran

IPC: H05H1/46 ,  C23C16/50 ,  C23C16/507 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23C14/00

CPC classification number: H01J37/32238 ,  C23C16/507 ,  H01J37/32082 ,  H01J37/321

Abstract: A method of plasma treating an article in a housing having a chamber in which the article such as a wafer can be treated with plasma. The housing includes at least one inlet port connected to an interior of the chamber through which process gas can be supplied to the chamber. A radiofrequency energy source is arranged to pass radiofrequency energy into the chamber and induce plasma in the interior of the chamber by activating, with an electric field induced by the radiofrequency energy source, process gas supplied to the chamber through the inlet port. A dielectric window having an inner surface thereof forms part of an inner wall of the chamber. Radiofrequency energy passes from the radiofrequency energy source to the interior of the chamber through the dielectric window. The dielectric window has a thickness which varies at different points along the inner surface thereof such that the thickness is largest at a central portion of the dielectric window. The dielectric window is effective to decrease the induced electric field in the interior of the chamber near the central portion of the dielectric window.

Abstract translation: 一种等离子体处理具有室的壳体中的物品的方法，其中诸如晶片的物品可以用等离子体处理。 壳体包括连接到室的内部的至少一个入口端口，通过该入口端口可将工艺气体供应到室。 射频能源设置成将射频能量传递到腔室中并且通过由射频能量源引起的电场通过入口端口供应到腔室的处理气体进行激活而在腔室的内部引起等离子体。 具有内表面的电介质窗形成室的内壁的一部分。 射频能量通过电介质窗从射频能量传递到腔室的内部。 电介质窗口具有在其内表面的不同点处变化的厚度，使得在电介质窗口的中心部分处的厚度最大。 电介质窗口有效地减小在电介质窗口的中心部分附近的室内的感应电场。

公开(公告)号：US5058242A

公开(公告)日：1991-10-22

申请号：US567070

申请日：1990-08-14

Applicant: David Liu ,  Jane Keo

Inventor： David Liu ,  Jane Keo

IPC: B42F9/00

CPC classification number: B42F9/001 ,  Y10T24/20 ,  Y10T24/204

Abstract: A pen holder is adapted to be attached to a spring of a clip-board. The spring has a U-shaped portion. The pen holder has a recess for holding a pen. A notch and a pair of grooves are formed in the base portion for receiving the pivot axle and the legs of the U-shaped portion of the spring. The width of the base portion is arranged such that the pen holder can be retained in position by the engagements between the notch and the pivot axle and between the grooves and the legs of the U-shaped portion.

Abstract translation: 笔夹适于附接到夹板的弹簧。 弹簧具有U形部分。 笔架有一个用于拿笔的凹槽。 在底座部分形成有一个槽口和一对槽，用于容纳枢转轴和弹簧的U形部分的腿部。 基部的宽度被布置成使得笔夹可以通过凹口和枢转轴之间的接合以及U形部分的凹槽和腿之间的接合而保持在适当的位置。