公开(公告)号：US20130128658A1

公开(公告)日：2013-05-23

申请号：US13679454

申请日：2012-11-16

Applicant: Everspin Technologies, Inc.

Inventor： Syed M. Alam ,  Thomas Andre

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/15 ,  G11C11/16 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1673

Abstract: A write driver for writing to a spin-torque magnetoresistive random access memory (ST-MRAM) minimizes sub-threshold leakage of the unselected (off) word line select transistors in the selected column. An effective metal resistance in the bit line and/or source line is reduced and power supply noise immunity is increased. Write driver bias signals are isolated from global bias signals, and a first voltage is applied at one end of a bit line using one of a first NMOS-follower circuit or a first PMOS-follower circuit. A second voltage is applied at opposite ends of a source line using, respectively, second and third PMOS-follower circuits, or second and third NMOS-follower circuits.

Abstract translation: 用于写入自旋扭矩磁阻随机存取存储器（ST-MRAM）的写入驱动器使选定列中未选择（关闭）字线选择晶体管的亚阈值泄漏最小化。 位线和/或源极线中的有效金属电阻降低，并且提供电源抗扰度。 写入驱动器偏置信号与全局偏置信号隔离，并且使用第一NMOS跟随器电路或第一PMOS跟随器电路之一在位线的一端施加第一电压。 分别使用第二和第三PMOS跟随器电路或第二和第三NMOS跟随器电路在源极线的相对端施加第二电压。