公开(公告)号：US09812352B2

公开(公告)日：2017-11-07

申请号：US15011629

申请日：2016-01-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chich-Neng Chang ,  Ya-Jyuan Hung ,  Bin-Siang Tsai

IPC: H01L21/00 ,  H01L21/768 ,  H01L23/532 ,  H01L23/535

CPC classification number: H01L21/7682 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76895 ,  H01L23/5222 ,  H01L23/53295 ,  H01L23/535 ,  H01L2221/1063

Abstract: A method for fabricating semiconductor device is disclosed. First, a substrate is provided, a dielectric layer is formed on the substrate, and an opening is formed in the dielectric layer, in which the dielectric layer includes a damaged layer adjacent to the opening. Next, a dielectric protective layer is formed in the opening, a metal layer is formed in the opening, and the damaged layer and the dielectric protective layer are removed.

公开(公告)号：US20170200632A1

公开(公告)日：2017-07-13

申请号：US15011629

申请日：2016-01-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chich-Neng Chang ,  Ya-Jyuan Hung ,  Bin-Siang Tsai

IPC: H01L21/768 ,  H01L23/535 ,  H01L23/532

CPC classification number: H01L21/7682 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76895 ,  H01L23/5222 ,  H01L23/53295 ,  H01L23/535 ,  H01L2221/1063

Abstract: A method for fabricating semiconductor device is disclosed. First, a substrate is provided, a dielectric layer is formed on the substrate, and an opening is formed in the dielectric layer, in which the dielectric layer includes a damaged layer adjacent to the opening. Next, a dielectric protective layer is formed in the opening, a metal layer is formed in the opening, and the damaged layer and the dielectric protective layer are removed.

公开(公告)号：US20160379864A1

公开(公告)日：2016-12-29

申请号：US15259041

申请日：2016-09-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wei-Hsin Liu ,  Bin-Siang Tsai

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/32 ,  H01L21/02

CPC classification number: H01L21/7682 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/32 ,  H01L21/76825 ,  H01L21/76834 ,  H01L23/485 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53238 ,  H01L23/53295

Abstract: A semiconductor process includes the following steps. Metal patterns are formed on a first dielectric layer. A modifiable layer is formed to cover the metal patterns and the first dielectric layer. A modification process is performed to modify a part of the modifiable layer on top sides of the metal patterns, thereby top masks being formed. A removing process is performed to remove a part of the modifiable layer on sidewalls of the metal patterns but preserve the top masks. A dielectric layer having voids under the top masks and between the metal patterns is formed. Moreover, the present invention also provides a semiconductor structure formed by said semiconductor process.

Abstract translation: 半导体工艺包括以下步骤。 金属图案形成在第一电介质层上。 形成可修饰层以覆盖金属图案和第一介电层。 执行修改处理以修改金属图案的顶侧上的可修改层的一部分，从而形成顶部掩模。 执行去除过程以去除金属图案的侧壁上的可修饰层的一部分，但保留顶部掩模。 形成在顶部掩模之下和金属图案之间具有空隙的电介质层。 此外，本发明还提供了由所述半导体工艺形成的半导体结构。