公开(公告)号：US20100291297A1

公开(公告)日：2010-11-18

申请号：US12733771

申请日：2008-09-19

申请人： Takeshi Nagasaka ,  Masahiro Yamamura ,  Yoshito Watanabe ,  Masaki Kondo ,  Yoshikazu Nakayama

发明人： Takeshi Nagasaka ,  Masahiro Yamamura ,  Yoshito Watanabe ,  Masaki Kondo ,  Yoshikazu Nakayama

IPC分类号： C23C16/26 ,  B01J31/00

CPC分类号： C01B31/0233 ,  B01J23/745 ,  B01J35/002 ,  B01J37/0215 ,  B01J37/0219 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/20 ,  C01B2202/34

摘要： This invention provides a method for forming a catalyst layer for carbon nanostructure growth, which can eliminate the influence of water in a liquid for catalyst layer formation, can grow homogeneous and highly oriented carbon nanostructures over the whole area of a substrate and can realize mass production of the carbon nanostructures, and a liquid for catalyst layer formation for use in the method, and a process for producing carbon nanostructures using the catalyst layer formed by the method. The catalyst layer for use in the production of CNTs is formed by preparing a catalyst metal salt solution of a catalyst metal-containing metal compound (a catalyst metal salt) dispersed or dissolved in a solvent having an ample wettability towards the substrate and coating the catalyst metal salt solution onto the substrate to a form a thin film. The thin film is then heat treated to form a catalyst layer. The substrate with the dried catalyst layer formed thereon is introduced into a carbon nanostructure synthetic device, and CNTs are grown by a thermal CVD method.

摘要翻译： 本发明提供一种用于形成碳纳米结构生长催化剂层的方法，其可以消除用于催化剂层形成的液体中的水的影响，可以在基材的整个区域上生长均匀且高度取向的碳纳米结构，并且可以实现批量生产 的碳纳米结构体，以及用于该方法的催化剂层形成用液体，以及使用该方法形成的催化剂层制造碳纳米结构体的方法。 用于生产CNT的催化剂层是通过制备分散或溶解在具有充分润湿性的溶剂中的含催化剂金属的金属化合物（催化剂金属盐）的催化剂金属盐溶液形成于底物上并涂覆催化剂 金属盐溶液形成薄膜。 然后将该薄膜热处理以形成催化剂层。 将其上形成有干燥催化剂层的基板引入碳纳米结构合成装置中，并通过热CVD法生长CNT。

公开(公告)号：US07755134B2

公开(公告)日：2010-07-13

申请号：US11765881

申请日：2007-06-20

申请人： Masaru Kito ,  Nobutoshi Aoki ,  Masaru Kidoh ,  Ryota Katsumata ,  Masaki Kondo ,  Naoki Kusunoki ,  Toshiyuki Enda ,  Sanae Ito ,  Hiroyoshi Tanimoto ,  Hideaki Aochi ,  Akihiro Nitayama ,  Riichiro Shirota

发明人： Masaru Kito ,  Nobutoshi Aoki ,  Masaru Kidoh ,  Ryota Katsumata ,  Masaki Kondo ,  Naoki Kusunoki ,  Toshiyuki Enda ,  Sanae Ito ,  Hiroyoshi Tanimoto ,  Hideaki Aochi ,  Akihiro Nitayama ,  Riichiro Shirota

IPC分类号： H01L27/115

CPC分类号： H01L29/7881 ,  H01L21/84 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11568 ,  H01L27/1203 ,  H01L29/42336

摘要： A nonvolatile semiconductor memory device includes: a semiconductor region; device isolation regions placed in the semiconductor region and extending in a column direction; a semiconductor layer placed on the semiconductor region and between the device isolation regions, and having a convex shape in cross section along a row direction; source/drain regions placed in the semiconductor layer and spaced from each other; a gate insulating film placed on the semiconductor layer between the source/drain regions; a floating gate electrode layer placed on the gate insulating film; an intergate insulating film placed on the floating gate electrode layer and upper surfaces of the device isolation regions; and a control gate electrode layer placed on the intergate insulating film and extending in the row direction.

摘要翻译： 非易失性半导体存储器件包括：半导体区域; 器件隔离区域放置在半导体区域中并沿列方向延伸; 放置在半导体区域和器件隔离区之间的半导体层，沿着行方向具有凸形的横截面; 源极/漏极区域放置在半导体层中并彼此间隔开; 位于源极/漏极区之间的半导体层上的栅极绝缘膜; 放置在栅极绝缘膜上的浮栅电极层; 布置在浮栅电极层和器件隔离区的上表面上的隔间绝缘膜; 以及控制栅极电极层，其设置在所述隔间绝缘膜上并沿行方向延伸。

公开(公告)号：US07738141B2

公开(公告)日：2010-06-15

申请号：US11509761

申请日：2006-08-25

申请人： Masaki Kondo

发明人： Masaki Kondo

IPC分类号： G06F15/00

CPC分类号： H04N1/6019 ,  H04N1/6022

摘要： A printing unit prints an image based on print data. The printing unit has characteristics. An input-color-data storing portion stores input color data indicative of colors of inputted image data. The input color data have color component values of a first color group. A print-data generating portion converts the color component values of the first color group stored in the input-color-data storing portion into color component values of a second color group, thereby generating pre-correction print data having a predetermined bit width. A correcting portion converts the pre-correction print data into post-correction print data that is adapted to the characteristics of the printing unit. The correcting portion includes a bit-width correcting portion that generates the post-correction print data having a bit width greater than the predetermined bit width. The bit-width correcting portion selectively increases the bit width based on predetermined criteria.

摘要翻译： 打印单元根据打印数据打印图像。 印刷单元有特点。 输入颜色数据存储部分存储表示输入的图像数据的颜色的输入颜色数据。 输入颜色数据具有第一颜色组的颜色分量值。 打印数据生成部分将存储在输入颜色数据存储部分中的第一颜色组的颜色分量值转换为第二颜色组的颜色分量值，从而产生具有预定位宽的预校正打印数据。 校正部分将预校正打印数据转换成适合于打印单元的特性的后校正打印数据。 校正部分包括产生具有大于预定比特宽度的比特宽度的校正后印刷数据的比特宽度校正部分。 比特宽度校正部分基于预定标准选择性地增加比特宽度。

公开(公告)号：US07626723B2

公开(公告)日：2009-12-01

申请号：US11065453

申请日：2005-02-25

申请人： Ryuji Yamada ,  Masaki Kondo ,  Yasunari Yoshida

发明人： Ryuji Yamada ,  Masaki Kondo ,  Yasunari Yoshida

IPC分类号： G06F15/00 ,  G03F3/08 ,  H04N1/46 ,  G06K9/00

CPC分类号： H04N1/6058

摘要： A color-conversion-table creating method includes (a) defining a color gamut in a first color space defined for a first device, the color gamut having a surface, an internal space surrounded by the surface, surface grid points positioned on the surface, and internal grid points positioned in the internal space, and determining a correspondence relationship between the surface grid points in the first color space and parameters in a second color space defined for a second device, (b) determining, based on the correspondence relationship determined in step (a), a correspondence relationship between the internal grid points in the first color space and parameters in the second color space, and (c) creating a color conversion table indicative of a correspondence relationship between all grid points in the first color space and parameters in the second color space based on both the correspondence relationship determined in step (a) and the correspondence relationship determined in step (b).

摘要翻译： 颜色转换表创建方法包括：（a）在为第一设备定义的第一颜色空间中定义色域，色域具有表面，被表面包围的内部空间，位于表面上的表面网格点， 以及位于所述内部空间中的内部网格点，以及确定所述第一颜色空间中的表面网格点与为第二设备定义的第二颜色空间中的参数之间的对应关系，（b）基于在 步骤（a），第一颜色空间中的内部网格点与第二颜色空间中的参数之间的对应关系，以及（c）创建指示第一颜色空间中的所有网格点之间的对应关系的颜色转换表，以及 基于在步骤（a）中确定的对应关系和步骤（b）中确定的对应关系的第二颜色空间中的参数。

公开(公告)号：US07595920B2

公开(公告)日：2009-09-29

申请号：US11359537

申请日：2006-02-23

申请人： Masaki Kondo ,  Yasunari Yoshida ,  Takeshi Watanabe

发明人： Masaki Kondo ,  Yasunari Yoshida ,  Takeshi Watanabe

IPC分类号： G03F3/08 ,  G06K9/001

CPC分类号： H04N1/6058 ,  H04N1/628

摘要： An image processing apparatus for color image information inputs a combination of component values of reference colors that constitute a processing color, and converts the combination of component values into a lightness value, saturation value, and hue value. The first correction factor, the second correction factor, and the third correction factor each has a value of 1.0 for a lightness value, saturation value and hue value converted from a specified color respectively, and monotonically decreases toward 0.0. The modulation amount storage means stores a modulation amount of the lightness value, saturation value, and hue value respectively.The lightness correction means computes a corrected lightness value from the converted lightness value, the saturation correction means computes a corrected saturation value from the converted saturation value, and the hue correction means computes a corrected hue value from the converted hue value by using the first, second, and third correction factors, and the modulation amount. The inverse conversion means inversely converts the corrected lightness value, corrected saturation value, and corrected hue value into a combination of component values of reference colors.

摘要翻译： 用于彩色图像信息的图像处理设备输入构成处理颜色的参考颜色的分量值的组合，并将分量值的组合转换为亮度值，饱和度值和色调值。 第一校正因子，第二校正因子和第三校正因子分别对于从指定颜色转换的亮度值，饱和度值和色相值分别为1.0，并且朝向0.0单调减小。 调制量存储装置分别存储亮度值，饱和度值和色相值的调制量。 亮度校正装置根据转换的亮度值计算校正亮度值，饱和校正装置根据转换后的饱和度计算校正的饱和度值，色相校正装置通过使用第一， 第二和第三校正因子以及调制量。 逆变换装置将校正后的亮度值，校正后的饱和度值和校正后的色调值逆变换为基准色的分量值的组合。

公开(公告)号：US20090146203A1

公开(公告)日：2009-06-11

申请号：US12327418

申请日：2008-12-03

申请人： Takashi Izumida ,  Masaki Kondo

发明人： Takashi Izumida ,  Masaki Kondo

IPC分类号： H01L29/788

CPC分类号： H01L29/7881 ,  G11C16/0483 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324

摘要： In one aspect of the present invention, a nonvolatile semiconductor memory device may include a semiconductor substrate; a plurality of tunnel insulating films formed on the semiconductor substrate at predetermined intervals in a first direction; a plurality of floating gate electrodes each having a first portion and a second portion, the first portions being formed on the respective tunnel insulating films, the second portions being formed on the respective first portions and having smaller width than the first portions in the first direction; an inter-gate insulating film formed on the floating gate electrodes; and first and second control gate electrodes respectively formed on sidewalls, in the first direction, of the second portion of each of the plurality of floating gate electrodes with the inter-gate insulating film interposed therebetween.

摘要翻译： 在本发明的一个方面中，非易失性半导体存储器件可以包括半导体衬底; 在第一方向上以预定间隔形成在所述半导体衬底上的多个隧道绝缘膜; 多个浮置栅极，每个具有第一部分和第二部分，所述第一部分形成在相应的隧道绝缘膜上，所述第二部分形成在相应的第一部分上，并且具有比所述第一方向上的第一部分更小的宽度 ; 形成在所述浮栅电极上的栅极间绝缘膜; 以及第一和第二控制栅极电极，分别形成在多个浮置栅电极中的每一个的第二部分的第一方向的侧壁上，栅间绝缘膜插入其间。

公开(公告)号：US20080315280A1

公开(公告)日：2008-12-25

申请号：US12142274

申请日：2008-06-19

申请人： Shinichi WATANABE ,  Fumitaka Arai ,  Makoto Mizukami ,  Hirofumi Inoue ,  Masaki Kondo

发明人： Shinichi WATANABE ,  Fumitaka Arai ,  Makoto Mizukami ,  Hirofumi Inoue ,  Masaki Kondo

IPC分类号： H01L29/423 ,  H01L21/336

CPC分类号： H01L27/115 ,  H01L27/11526 ,  H01L27/11529

摘要： A semiconductor memory device includes a silicon substrate including a first region which has a buried insulating layer below a single-crystal silicon layer and a second region which does not have the buried insulating layer below the single-crystal silicon layer, at least one memory cell transistor which has a first gate electrode, the first gate electrode being provided on the single-crystal silicon layer in the first region, and at least one selective gate transistor which has a second gate electrode and is provided on the single-crystal silicon layer in the first region. The one selective gate transistor is provided in such a manner that a part of the second gate electrode is placed on the single-crystal silicon layer in the second region.

摘要翻译： 一种半导体存储器件包括：硅衬底，其包括在单晶硅层下方具有掩埋绝缘层的第一区域和在单晶硅层下方不具有掩埋绝缘层的第二区域;至少一个存储单元 晶体管，其具有第一栅极电极，第一栅电极设置在第一区域中的单晶硅层上，以及至少一个选择栅极晶体管，其具有第二栅电极，并设置在单晶硅层上 第一个地区。 一个选择栅极晶体管被设置成使得第二栅电极的一部分被放置在第二区域中的单晶硅层上。

公开(公告)号：US20080246072A1

公开(公告)日：2008-10-09

申请号：US11773721

申请日：2007-07-05

申请人： Masaki Kondo ,  Takashi Izumida ,  Nobutoshi Aoki ,  Toshiharu Watanabe

发明人： Masaki Kondo ,  Takashi Izumida ,  Nobutoshi Aoki ,  Toshiharu Watanabe

IPC分类号： H01L29/788

CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： In a nonvolatile semiconductor memory device including a memory cell column formed by connecting in series a plurality of memory cells each having a structure in which a charge-storage layer and a control gate are stacked via an insulating layer on a semiconductor substrate, a first selection transistor formed on the semiconductor substrate and connected between one end of the memory cell column and a common source line, and a second selection transistor formed on the semiconductor substrate and connected between the other end of the memory cell column and a bit line, a recessed portion is formed on a surface of the semiconductor substrate between the first selection transistor and a memory cell adjacent to the first selection transistor, and an edge at a side of the first selection transistor in the recessed portion reaches an end portion at a side of the memory cell in a gate of the first selection transistor.

摘要翻译： 在包括存储单元列的非易失性半导体存储器件中，该存储单元列是通过串联连接多个存储单元而形成的，每个存储单元具有通过绝缘层在半导体衬底上层叠电荷存储层和控制栅极的结构，第一选择 形成在半导体衬底上并连接在存储单元列的一端和公共源极线之间的晶体管，以及形成在半导体衬底上并连接在存储单元列的另一端和位线之间的第二选择晶体管， 部分形成在第一选择晶体管和与第一选择晶体管相邻的存储单元之间的半导体衬底的表面上，并且凹陷部分中的第一选择晶体管的一侧的边缘到达第二选择晶体管的一侧的端部 第一选择晶体管的栅极中的存储单元。

公开(公告)号：US07367156B2

公开(公告)日：2008-05-06

申请号：US11006686

申请日：2004-12-08

申请人： Masaki Kondo ,  Yasunari Yoshida ,  Masashi Ueda

发明人： Masaki Kondo ,  Yasunari Yoshida ,  Masashi Ueda

IPC分类号： B41J2/205

CPC分类号： B41J2/2121

摘要： An inkjet recording device records images by forming dots on a recording medium with droplet modulating method. The inkjet recording device includes a recording unit, a multilevel-data creating portion, and a dot-layout-data creating portion. The recording unit ejects ink droplets for forming dots at corresponding pixel positions. The recording unit is capable of changing a volume of each ink droplet to form dots with different sizes. The multilevel-data creating portion creates multilevel data based on image data. The multilevel data includes a dot size for each dot. The dot-layout-data creating portion creating dot layout data based on the multilevel data, so as to prevent the recording unit from forming dots having the same size continuously by greater than or equal to a predetermined number. The recording unit performs recording operation based on the dot layout data.

摘要翻译： 喷墨记录装置通过用液滴调制方法在记录介质上形成点来记录图像。 喷墨记录装置包括记录单元，多级数据创建部分和点布局数据创建部分。 记录单元喷射墨滴以在相应的像素位置形成点。 记录单元能够改变每个墨滴的体积以形成具有不同尺寸的点。 多级数据创建部分基于图像数据创建多级数据。 多级数据包括每个点的点大小。 点阵布局数据创建部分基于多级数据创建点布局数据，以防止记录单元连续形成具有大于或等于预定数量的相同尺寸的点。 记录单元基于点布局数据执行记录操作。

公开(公告)号：US20080026565A1

公开(公告)日：2008-01-31

申请号：US11827687

申请日：2007-07-13

申请人： Masaki Kondo

发明人： Masaki Kondo

IPC分类号： H01L21/4763 ,  B05D3/00 ,  C03C23/00

CPC分类号： H05K3/421 ,  H05K3/0055 ,  H05K2203/0315 ,  H05K2203/0789 ,  H05K2203/1157

摘要： A metallic copper and resin composite body manufacturing method of forming a copper wiring layer that forms an inner layer circuit, establishing an insulating layer with a resin on said wiring layer, forming via holes which expose the copper surface under the insulative layer, and depositing a metal on the copper surface that is exposed at the bottom of the via holes. The method includes a step of: removing copper oxide which forms on the surface of the copper that is exposed in the bottom of the via holes using a phosphoric acid aqueous solution with a pH between 1 and 3. The method suppresses haloing is and via holes with excellent solder bonding are formed.

摘要翻译： 一种金属铜和树脂复合体制造方法，其形成形成内层电路的铜布线层，在所述布线层上形成树脂绝缘层，形成在绝缘层下露出铜表面的通孔， 在通孔底部露出的铜表面上的金属。 该方法包括以下步骤：使用pH在1和3之间的磷酸水溶液去除在孔的底部暴露于铜的表面上形成的氧化铜。该方法抑制晕圈和通孔 形成良好的焊接。