公开(公告)号：US20130112968A1

公开(公告)日：2013-05-09

申请号：US13666147

申请日：2012-11-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shinya SASAGAWA ,  Hiroshi FUJIKI

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device which achieves miniaturization with favorable characteristics maintained is provided. In addition, a miniaturized semiconductor device is provided with high yield. In a semiconductor device including an oxide semiconductor, the contact resistance between the oxide semiconductor and the source electrode or the drain electrode is reduced with miniaturization advanced. Specifically, an oxide semiconductor film is processed to be an island-shaped oxide semiconductor film whose side surface has a tapered shape. Further, the side surface has a taper angle greater than or equal to 1° and less than 10°, and at least part of the source electrode and the drain electrode is in contact with the side surfaces of the oxide semiconductor film. With such a structure, the contact region of the oxide semiconductor film and the source electrode or the drain electrode is increased, whereby the contact resistance is reduced.

Abstract translation: 提供了一种实现小型化且保持良好特性的半导体器件。 此外，提供了一种小型化的半导体器件，其产率高。 在包括氧化物半导体的半导体器件中，随着小型化，氧化物半导体和源电极或漏电极之间的接触电阻降低。 具体而言，将氧化物半导体膜加工成为侧面为锥形的岛状氧化物半导体膜。 此外，侧面具有大于或等于1°且小于10°的锥角，并且源电极和漏电极的至少一部分与氧化物半导体膜的侧表面接触。 通过这样的结构，氧化物半导体膜与源电极或漏电极的接触面积增大，接触电阻降低。

公开(公告)号：US20130092925A1

公开(公告)日：2013-04-18

申请号：US13632635

申请日：2012-10-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshihiko SAITO ,  Atsuo ISOBE ,  Kazuya HANAOKA ,  Junichi KOEZUKA ,  Shinya SASAGAWA ,  Motomu KURATA ,  Akihiro ISHIZUKA

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/66477 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: A miniaturized transistor is provided with high yield. Further, a semiconductor device which has high on-state characteristics and which is capable of high-speed response and high-speed operation is provided. In the semiconductor device, an oxide semiconductor layer, a gate insulating layer, a gate electrode layer, an insulating layer, a conductive film, and an interlayer insulating layer are stacked in this order. A source electrode layer and a drain electrode layer are formed in a self-aligned manner by cutting the conductive film so that the conductive film over the gate electrode layer and the conductive layer is removed and the conductive film is divided. An electrode layer which is in contact with the oxide semiconductor layer and overlaps with a region in contact with the source electrode layer and the drain electrode layer is provided.

Abstract translation: 提供了一种小型化的晶体管，其产率高。 此外，提供了具有高导通状态特性并且能够进行高速响应和高速操作的半导体器件。 在半导体装置中，依次层叠氧化物半导体层，栅极绝缘层，栅极电极层，绝缘层，导电膜和层间绝缘层。 通过切割导电膜以自对准的方式形成源电极层和漏电极层，从而去除栅极电极层和导电层上的导电膜，并且导电膜被分割。 设置与氧化物半导体层接触并与与源极电极层和漏极电极层接触的区域重叠的电极层。