公开(公告)号：US20100105204A1

公开(公告)日：2010-04-29

申请号：US12257279

申请日：2008-10-23

Applicant: WINSOR LAM ,  TZA-Jing Gung ,  Hong S. Yang ,  Adolph Miller Allen

Inventor： WINSOR LAM ,  TZA-Jing Gung ,  Hong S. Yang ,  Adolph Miller Allen

IPC: H01L21/44

CPC classification number: H01L21/76841 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76865 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods for processing substrates are provided herein. In some embodiments, a method for processing substrates includes providing to a process chamber a substrate comprising an exposed dielectric layer having a feature formed therein. A mask layer comprising titanium nitride may be selectively deposited atop corners of the feature. A barrier layer may be selectively deposited atop the mask layer and into a bottom portion of the feature. The barrier layer deposited on the bottom portion of the feature may be etched to redistribute at least a portion of the barrier layer onto sidewalls of the feature.

Abstract translation: 本文提供了处理基板的方法。 在一些实施例中，用于处理衬底的方法包括向处理室提供包括其中形成有特征的暴露介电层的衬底。 包括氮化钛的掩模层可以选择性地沉积在特征的角落的顶部。 阻挡层可以选择性地沉积在掩模层的顶部并进入特征的底部。 可以蚀刻沉积在特征的底部上的阻挡层，以将阻挡层的至少一部分重新分布到特征的侧壁上。

公开(公告)号：US07422664B2

公开(公告)日：2008-09-09

申请号：US11346785

申请日：2006-02-03

Applicant: Alan Alexander Ritchie ,  Adolph Miller Allen

Inventor： Alan Alexander Ritchie ,  Adolph Miller Allen

IPC: C23C14/34

CPC classification number: H01J37/32009

Abstract: A method for igniting a plasma in a semiconductor process chamber is provided herein. In one embodiment, a method for igniting a plasma in a semiconductor substrate process chamber having an electrically isolated anode, wherein the plasma has failed to ignite upon applying a plasma ignition voltage to a cathode of the process chamber, includes the steps of reducing the magnitude of the voltage applied to the cathode; reapplying the plasma ignition voltage to the cathode; and monitoring the process chamber to determine if the plasma has ignited. The step of monitoring the process chamber may have a duration of a first period of time. The step of reducing the magnitude of the voltage applied to the cathode may have a duration of a second period of time. The steps of reducing the cathode voltage magnitude and reapplying the plasma ignition voltage may be repeated until a plasma ignites.

Abstract translation: 本文提供了一种用于点燃半导体处理室中的等离子体的方法。 在一个实施例中，一种用于点燃具有电隔离阳极的半导体衬底处理室中的等离子体的方法，其中等离子体在将等离子体点火电压施加到处理室的阴极时不能点燃，包括降低幅度的步骤 施加到阴极的电压; 将等离子体点火电压重新施加到阴极; 并监测处理室以确定等离子体是否已点燃。 监测处理室的步骤可以具有第一时间段的持续时间。 降低施加到阴极的电压的大小的步骤可以具有第二时间段的持续时间。 可以重复降低阴极电压幅度并重新施加等离子体点火电压的步骤，直到等离子体点燃。