公开(公告)号：US07829456B2

公开(公告)日：2010-11-09

申请号：US12257279

申请日：2008-10-23

Applicant: Winsor Lam ,  Tza-Jing Gung ,  Hong S. Yang ,  Adolph Miller Allen

Inventor： Winsor Lam ,  Tza-Jing Gung ,  Hong S. Yang ,  Adolph Miller Allen

IPC: H01L21/4763

CPC classification number: H01L21/76841 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76865 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods for processing substrates are provided herein. In some embodiments, a method for processing substrates includes providing to a process chamber a substrate comprising an exposed dielectric layer having a feature formed therein. A mask layer comprising titanium nitride may be selectively deposited atop corners of the feature. A barrier layer may be selectively deposited atop the mask layer and into a bottom portion of the feature. The barrier layer deposited on the bottom portion of the feature may be etched to redistribute at least a portion of the barrier layer onto sidewalls of the feature.

Abstract translation: 本文提供了处理基板的方法。 在一些实施例中，用于处理衬底的方法包括向处理室提供包括其中形成有特征的暴露介电层的衬底。 包括氮化钛的掩模层可以选择性地沉积在特征的角落的顶部。 阻挡层可以选择性地沉积在掩模层的顶部并进入特征的底部。 可以蚀刻沉积在特征的底部上的阻挡层，以将阻挡层的至少一部分重新分布到特征的侧壁上。

公开(公告)号：US20080099329A1

公开(公告)日：2008-05-01

申请号：US11553880

申请日：2006-10-27

Applicant: Cristopher M. Pavloff ,  Winsor Lam ,  Tza-Jing Gung ,  Hong S. Yang ,  Ilyoung Richard Hong

Inventor： Cristopher M. Pavloff ,  Winsor Lam ,  Tza-Jing Gung ,  Hong S. Yang ,  Ilyoung Richard Hong

IPC: C23C14/00

CPC classification number: C23C14/35 ,  H01J37/3408 ,  H01J37/3452 ,  H01J37/3455

Abstract: A dual magnetron for plasma sputtering including a source magnetron and an auxiliary magnetron, each of which rotate about the center of the target at respective radii. The positions of the magnetron can be moved in complementary radial directions between sputter deposition and target cleaning. The magnetrons have different characteristics of size, strength, and imbalance. The source magnetron is smaller, stronger, and unbalanced source magnetron and is positioned near the edge of the wafer in sputter deposition and etching. The auxiliary magnetron is larger, weak, and more balanced and used for cleaning the center of the target and guiding sputter ions from the source magnetron in sputter deposition. Each magnetron may have its plasma shorted out in its radially outer position.

Abstract translation: 一种用于等离子体溅射的双磁控管，包括源磁控管和辅助磁控管，每个磁控管以相应的半径围绕靶的中心旋转。 磁控管的位置可以在溅射沉积和目标清洁之间沿互补的径向移动。 磁控管具有不同的尺寸，强度和不平衡特性。 源极磁控管是较小，较强和不平衡的源磁控管，并且在溅射沉积和蚀刻中位于晶片边缘附近。 辅助磁控管较大，弱且更均衡，用于清洁靶的中心并在溅射沉积中引导来自源磁控管的溅射离子。 每个磁控管可以使其等离子体在其径向外部位置短路。

公开(公告)号：US20140046475A1

公开(公告)日：2014-02-13

申请号：US13570712

申请日：2012-08-09

Applicant: WINSOR LAM ,  KEITH A. MILLER ,  CARL JOHNSON ,  MARTIN LEE RIKER ,  YE XU

Inventor： WINSOR LAM ,  KEITH A. MILLER ,  CARL JOHNSON ,  MARTIN LEE RIKER ,  YE XU

IPC: C23C14/35 ,  C25D21/12 ,  G05B15/02 ,  C23C14/54

CPC classification number: C23C14/046 ,  C23C14/54 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76879

Abstract: Methods and apparatus for processing a substrate in a process chamber, include receiving process control parameters for one or more devices from a process controller to perform a first chamber process, determining a time to send each of the process control parameters to the one or more devices, for each of the one or more devices, adjusting the determined time to send each of the process control parameters using specific signal process delays associated with each of the one or more devices, and sending the process control parameters to each of the one or more devices at the adjusted times to perform the first chamber process, wherein the synchronization controller includes one or more output channels, each channel directly coupled to one of the one or more devices.

Abstract translation: 用于在处理室中处理衬底的方法和装置包括从过程控制器接收用于一个或多个设备的过程控制参数，以执行第一室过程，确定将每个过程控制参数发送到一个或多个设备的时间 对于所述一个或多个设备中的每一个，使用与所述一个或多个设备中的每个设备相关联的特定信号处理延迟来调整所确定的时间以发送每个所述过程控制参数，以及将所述过程控制参数发送到所述一个或多个设备 在调整的时间进行第一室处理，其中所述同步控制器包括一个或多个输出通道，每个通道直接耦合到所述一个或多个设备之一。

公开(公告)号：US20120108058A1

公开(公告)日：2012-05-03

申请号：US13269243

申请日：2011-10-07

Applicant: TAE HONG HA ,  WINSOR LAM ,  TZA-JING GUNG ,  JOUNG JOO LEE

Inventor： TAE HONG HA ,  WINSOR LAM ,  TZA-JING GUNG ,  JOUNG JOO LEE

IPC: H01L21/768

CPC classification number: H01L21/76843 ,  C23C14/046 ,  C23C14/345 ,  H01L21/2855 ,  H01L21/76858 ,  H01L21/76865 ,  H01L21/76873

Abstract: Methods for forming layers on a substrate are provided herein. In some embodiments, methods of forming layers on a substrate disposed in a process chamber may include depositing a barrier layer comprising titanium within one or more features in the substrate; and sputtering a material from a target in the presence of a plasma formed from a process gas by applying a DC power to the target, maintaining a pressure of less than about 500 mTorr within the process chamber, and providing up to about 5000 W of a substrate bias RF power to deposit a seed layer comprising the material atop the barrier layer.

Abstract translation: 本文提供了在基板上形成层的方法。 在一些实施例中，在设置在处理室中的衬底上形成层的方法可以包括在衬底的一个或多个特征内沉积包含钛的阻挡层; 在通过向目标施加DC电力的情况下，在由处理气体形成的等离子体存在下溅射材料，在处理室内保持小于约500mTorr的压力，并提供高达约5000W的 衬底偏置射频功率以在阻挡层顶上沉积包含该材料的晶种层。

公开(公告)号：US08168543B2

公开(公告)日：2012-05-01

申请号：US12562607

申请日：2009-09-18

Applicant: Xinyu Fu ,  Keyvan Kashefizadeh ,  Ashish Subhash Bodke ,  Winsor Lam ,  Yiochiro Tanaka ,  Wonwoo Kim

Inventor： Xinyu Fu ,  Keyvan Kashefizadeh ,  Ashish Subhash Bodke ,  Winsor Lam ,  Yiochiro Tanaka ,  Wonwoo Kim

IPC: H01L21/311

CPC classification number: H01L21/76846 ,  C23C14/0057 ,  C23C14/5853 ,  H01L21/2855 ,  H01L21/76856

Abstract: Methods of forming a barrier layer are provided. In one embodiment, the method includes providing a substrate into a physical vapor deposition (PVD) chamber, supplying at least two reactive gases and an inert gas into the PVD chamber, sputtering a source material from a target disposed in the processing chamber in the presence of a plasma formed from the gas mixture, and forming a metal containing dielectric layer on the substrate from the source material. In another embodiment, the method includes providing a substrate into a PVD chamber, supplying a reactive gas the PVD chamber, sputtering a source material from a target disposed in the PVD chamber in the presence of a plasma formed from the reactive gas, forming a metal containing dielectric layer on the substrate from the source material, and post treating the metal containing layer in presence of species generated from a remote plasma chamber.

Abstract translation: 提供形成阻挡层的方法。 在一个实施例中，该方法包括将衬底提供到物理气相沉积（PVD）室中，将至少两种反应性气体和惰性气体供应到PVD室中，在存在的情况下从设置在处理室中的靶溅射源材料 的由所述气体混合物形成的等离子体，并且从所述源材料在所述衬底上形成含金属的电介质层。 在另一个实施例中，该方法包括将衬底提供到PVD腔室中，在反应气体形成的等离子体存在下，将反应气体提供给PVD腔室，从设置在PVD腔室中的靶材溅射源材料，形成金属 在来自源材料的基板上含有介电层，并且在从远程等离子体室产生的物质存在下对金属含有层进行后处理。

公开(公告)号：US07767064B2

公开(公告)日：2010-08-03

申请号：US11553880

申请日：2006-10-27

Applicant: Cristopher M. Pavloff ,  Winsor Lam ,  Tza-Jing Gung ,  Hong S. Yang ,  Ilyoung Richard Hong

Inventor： Cristopher M. Pavloff ,  Winsor Lam ,  Tza-Jing Gung ,  Hong S. Yang ,  Ilyoung Richard Hong

IPC: C23C14/00

CPC classification number: C23C14/35 ,  H01J37/3408 ,  H01J37/3452 ,  H01J37/3455

Abstract: A dual magnetron for plasma sputtering including a source magnetron and an auxiliary magnetron, each of which rotate about the center of the target at respective radii. The positions of the magnetron can be moved in complementary radial directions between sputter deposition and target cleaning. The magnetrons have different characteristics of size, strength, and imbalance. The source magnetron is smaller, stronger, and unbalanced source magnetron and is positioned near the edge of the wafer in sputter deposition and etching. The auxiliary magnetron is larger, weak, and more balanced and used for cleaning the center of the target and guiding sputter ions from the source magnetron in sputter deposition. Each magnetron may have its plasma shorted out in its radially outer position.

Abstract translation: 一种用于等离子体溅射的双磁控管，包括源磁控管和辅助磁控管，每个磁控管以相应的半径围绕靶的中心旋转。 磁控管的位置可以在溅射沉积和目标清洁之间沿互补的径向移动。 磁控管具有不同的尺寸，强度和不平衡特性。 源极磁控管是较小，较强和不平衡的源磁控管，并且在溅射沉积和蚀刻中位于晶片边缘附近。 辅助磁控管较大，弱且更均衡，用于清洁靶的中心并在溅射沉积中引导来自源磁控管的溅射离子。 每个磁控管可以使其等离子体在其径向外部位置短路。

公开(公告)号：US20090227105A1

公开(公告)日：2009-09-10

申请号：US12041804

申请日：2008-03-04

Applicant: Xinyu Fu ,  Keyvan Kashefizadeh ,  Ashish Subhash Bodke ,  Winsor Lam ,  Yiochiro Tanaka ,  Wonwoo Kim

Inventor： Xinyu Fu ,  Keyvan Kashefizadeh ,  Ashish Subhash Bodke ,  Winsor Lam ,  Yiochiro Tanaka ,  Wonwoo Kim

IPC: H01L21/44 ,  H01L21/285

CPC classification number: H01L21/76846 ,  C23C14/0057 ,  C23C14/5853 ,  H01L21/2855 ,  H01L21/76856

Abstract: Methods of forming a barrier layer are provided. In one embodiment, the method includes providing a substrate into a physical vapor deposition (PVD) chamber, supplying at least two reactive gases and an inert gas into the PVD processing chamber, sputtering a source material from a target disposed in the processing chamber in the presence of a plasma formed from the gas mixture, and forming a metal containing dielectric layer on the substrate from the source material. In another embodiment, the method includes providing a substrate into a PVD chamber, supplying a reactive gas the PVD chamber, sputtering a source material from a target disposed in the PVD chamber in the presence of a plasma formed from the reactive gas, forming a metal containing dielectric layer on the substrate from the source material, and post treating the metal containing layer in presence of species generated from a remote plasma chamber.

Abstract translation: 提供形成阻挡层的方法。 在一个实施例中，该方法包括将衬底提供到物理气相沉积（PVD）腔室中，将至少两种反应性气体和惰性气体供应到PVD处理腔室中，将来自设置在处理室中的靶的源材料溅射在 存在由气体混合物形成的等离子体，并且从源材料在衬底上形成含金属的电介质层。 在另一个实施例中，该方法包括将衬底提供到PVD腔室中，在反应气体形成的等离子体存在下，将反应气体提供给PVD腔室，从设置在PVD腔室中的靶材溅射源材料，形成金属 在来自源材料的基板上含有介电层，并且在从远程等离子体室产生的物质存在下对金属含有层进行后处理。

公开(公告)号：US20100105204A1

公开(公告)日：2010-04-29

申请号：US12257279

申请日：2008-10-23

Applicant: WINSOR LAM ,  TZA-Jing Gung ,  Hong S. Yang ,  Adolph Miller Allen

Inventor： WINSOR LAM ,  TZA-Jing Gung ,  Hong S. Yang ,  Adolph Miller Allen

IPC: H01L21/44

CPC classification number: H01L21/76841 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76865 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods for processing substrates are provided herein. In some embodiments, a method for processing substrates includes providing to a process chamber a substrate comprising an exposed dielectric layer having a feature formed therein. A mask layer comprising titanium nitride may be selectively deposited atop corners of the feature. A barrier layer may be selectively deposited atop the mask layer and into a bottom portion of the feature. The barrier layer deposited on the bottom portion of the feature may be etched to redistribute at least a portion of the barrier layer onto sidewalls of the feature.

Abstract translation: 本文提供了处理基板的方法。 在一些实施例中，用于处理衬底的方法包括向处理室提供包括其中形成有特征的暴露介电层的衬底。 包括氮化钛的掩模层可以选择性地沉积在特征的角落的顶部。 阻挡层可以选择性地沉积在掩模层的顶部并进入特征的底部。 可以蚀刻沉积在特征的底部上的阻挡层，以将阻挡层的至少一部分重新分布到特征的侧壁上。

公开(公告)号：US08476162B2

公开(公告)日：2013-07-02

申请号：US13269243

申请日：2011-10-07

Applicant: Tae Hong Ha ,  Winsor Lam ,  Tza-Jing Gung ,  Joung Joo Lee

Inventor： Tae Hong Ha ,  Winsor Lam ,  Tza-Jing Gung ,  Joung Joo Lee

IPC: H01L21/44

CPC classification number: H01L21/76843 ,  C23C14/046 ,  C23C14/345 ,  H01L21/2855 ,  H01L21/76858 ,  H01L21/76865 ,  H01L21/76873

Abstract: Methods for forming layers on a substrate are provided herein. In some embodiments, methods of forming layers on a substrate disposed in a process chamber may include depositing a barrier layer comprising titanium within one or more features in the substrate; and sputtering a material from a target in the presence of a plasma formed from a process gas by applying a DC power to the target, maintaining a pressure of less than about 500 mTorr within the process chamber, and providing up to about 5000 W of a substrate bias RF power to deposit a seed layer comprising the material atop the barrier layer.

Abstract translation: 本文提供了在基板上形成层的方法。 在一些实施例中，在设置在处理室中的衬底上形成层的方法可以包括在衬底的一个或多个特征内沉积包含钛的阻挡层; 在通过向目标施加DC电力的情况下，在由处理气体形成的等离子体存在下溅射材料，在处理室内保持小于约500mTorr的压力，并提供高达约5000W的 衬底偏置射频功率以在阻挡层顶上沉积包含该材料的晶种层。

公开(公告)号：US20100006425A1

公开(公告)日：2010-01-14

申请号：US12562607

申请日：2009-09-18

Applicant: Xinyu Fu ,  Keyvan Kashefizadeh ,  Ashish Subhash Bodke ,  Winsor Lam ,  Yiochiro Tanaka ,  Wonwoo Kim

Inventor： Xinyu Fu ,  Keyvan Kashefizadeh ,  Ashish Subhash Bodke ,  Winsor Lam ,  Yiochiro Tanaka ,  Wonwoo Kim

IPC: C23C14/34

CPC classification number: H01L21/76846 ,  C23C14/0057 ,  C23C14/5853 ,  H01L21/2855 ,  H01L21/76856

Abstract: Methods of forming a barrier layer are provided. In one embodiment, the method includes providing a substrate into a physical vapor deposition (PVD) chamber, supplying at least two reactive gases and an inert gas into the PVD chamber, sputtering a source material from a target disposed in the processing chamber in the presence of a plasma formed from the gas mixture, and forming a metal containing dielectric layer on the substrate from the source material. In another embodiment, the method includes providing a substrate into a PVD chamber, supplying a reactive gas the PVD chamber, sputtering a source material from a target disposed in the PVD chamber in the presence of a plasma formed from the reactive gas, forming a metal containing dielectric layer on the substrate from the source material, and post treating the metal containing layer in presence of species generated from a remote plasma chamber.

Abstract translation: 提供形成阻挡层的方法。 在一个实施例中，该方法包括将衬底提供到物理气相沉积（PVD）室中，将至少两种反应性气体和惰性气体供应到PVD室中，在存在的情况下从设置在处理室中的靶溅射源材料 的由所述气体混合物形成的等离子体，并且从所述源材料在所述衬底上形成含金属的电介质层。 在另一个实施例中，该方法包括将衬底提供到PVD腔室中，在反应气体形成的等离子体存在下，将反应气体提供给PVD腔室，从设置在PVD腔室中的靶材溅射源材料，形成金属 在来自源材料的基板上含有介电层，并且在从远程等离子体室产生的物质存在下对金属含有层进行后处理。