公开(公告)号：US20060175292A1

公开(公告)日：2006-08-10

申请号：US11328688

申请日：2006-01-10

Applicant: Thorsten Hanewald ,  Andreas Hauser ,  Ingold Janssen ,  Kai-Olaf Subke

Inventor： Thorsten Hanewald ,  Andreas Hauser ,  Ingold Janssen ,  Kai-Olaf Subke

IPC: C23F1/00 ,  H01L21/302 ,  B44C1/22 ,  H01L21/461

CPC classification number: H01J37/32 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/32981 ,  H01J2237/3347 ,  H01L21/3065

Abstract: An explanation is given of a method in which a plasma is used for energetic excitation of a reactive etching gas. The reactive etching gas is a constituent of a continuous gas flow. A recess is deepened by at least fifty micrometers without interrupting the gas flow in the meantime, with the result that a simple method for producing deep recesses is specified.

Abstract translation: 给出了其中等离子体用于反应性蚀刻气体的能量激发的方法的说明。 反应性蚀刻气体是连续气流的组成。 凹陷加深了至少50微米，同时不中断气体流动，结果指定了一种用于生产深凹槽的简单方法。