公开(公告)号：US07799691B2

公开(公告)日：2010-09-21

申请号：US11328688

申请日：2006-01-10

Applicant: Thorsten Hanewald ,  Andreas Hauser ,  Ingold Janssen ,  Kai-Olaf Subke

Inventor： Thorsten Hanewald ,  Andreas Hauser ,  Ingold Janssen ,  Kai-Olaf Subke

IPC: H01L21/311

CPC classification number: H01J37/32 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/32981 ,  H01J2237/3347 ,  H01L21/3065

Abstract: A method and apparatus for anisotropically etching a recess in a silicon substrate is disclosed. Generally, a plasma is used for energetic excitation of a reactive etching gas, wherein the reactive etching gas is a constituent of a continuous gas flow. A recess is anisotropically etched in a silicon substrate using the reactive etching gas, during which time the recess id deepened by at least fifty micrometers without interrupting the gas flow of the reactive etching gas.

Abstract translation: 公开了一种用于各向异性蚀刻硅衬底中的凹部的方法和装置。 通常，等离子体用于反应性蚀刻气体的能量激发，其中反应性蚀刻气体是连续气流的组成。 使用反应性蚀刻气体在硅衬底中各向异性地蚀刻凹陷，在此期间，凹陷id加深至少50微米，而不会中断反应性蚀刻气体的气流。

公开(公告)号：US20060175292A1

公开(公告)日：2006-08-10

申请号：US11328688

申请日：2006-01-10

Applicant: Thorsten Hanewald ,  Andreas Hauser ,  Ingold Janssen ,  Kai-Olaf Subke

Inventor： Thorsten Hanewald ,  Andreas Hauser ,  Ingold Janssen ,  Kai-Olaf Subke

IPC: C23F1/00 ,  H01L21/302 ,  B44C1/22 ,  H01L21/461

CPC classification number: H01J37/32 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/32981 ,  H01J2237/3347 ,  H01L21/3065

Abstract: An explanation is given of a method in which a plasma is used for energetic excitation of a reactive etching gas. The reactive etching gas is a constituent of a continuous gas flow. A recess is deepened by at least fifty micrometers without interrupting the gas flow in the meantime, with the result that a simple method for producing deep recesses is specified.

Abstract translation: 给出了其中等离子体用于反应性蚀刻气体的能量激发的方法的说明。 反应性蚀刻气体是连续气流的组成。 凹陷加深了至少50微米，同时不中断气体流动，结果指定了一种用于生产深凹槽的简单方法。