公开(公告)号：US20240363319A1

公开(公告)日：2024-10-31

申请号：US18354609

申请日：2023-07-18

申请人： Dah Young Vacuum Equipment Co., Ltd.

发明人： Tzu-Hou Chan ,  Ching-Yen Lin ,  Chu-Liang Ho ,  Ping-Yen Hsieh ,  Ying-Hung Chen

IPC分类号： H01J37/32

CPC分类号： H01J37/32972 ,  H01J37/32981

摘要： A plasma monitoring device including at least one first cathode, at least one second cathode, a first collimator group, a first mass flow controller group, and a plasma emission monitor is disclosed. The first cathode has a first target and provides a first plasma. The second cathode has a second target and provides a second plasma. The first collimator group is disposed corresponding to the first cathode to detect a first spectrum of the first plasma. The first mass flow controller group provides gas to the first cathode and the second cathode through a first gas supply pipe group and a second gas supply pipe group. The plasma emission monitor adjusts a flow rate of the gas provided by the first mass flow controller group according to the first spectrum of the first plasma. The first target and the second target are the same. A total number of collimator groups is less than a total number of cathodes.

公开(公告)号：US12014910B2

公开(公告)日：2024-06-18

申请号：US17494553

申请日：2021-10-05

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yu-Hsiang Cheng ,  Che-Wei Wu

IPC分类号： C23C16/52 ,  H01J37/32

CPC分类号： H01J37/32926 ,  C23C16/52 ,  H01J37/32733 ,  H01J37/32981 ,  H01J2237/3321

摘要： A thin-film deposition system includes a top plate positioned above a wafer and configured to generate a plasma during a thin-film deposition process. The system includes a sensor configured to generate sensor signals indicative of a lifetime of a component of the thin-film deposition system, a characteristic of a thin-film deposited by the thin-film deposition system or a characteristic of a process material that flows into the thin-film deposition system. The system includes a control system configured to adjust a relative location of a top plate of the thin-film deposition system with respect to a location of a wafer in the thin-film deposition system during the thin-film deposition process responsive to the sensor signals.

公开(公告)号：US20240153750A1

公开(公告)日：2024-05-09

申请号：US18408313

申请日：2024-01-09

申请人： Applied Materials, Inc.

发明人： Tina Dhekial-Phukan ,  Michael Nichols

IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/52 ,  H01L21/67

CPC分类号： H01J37/32816 ,  C23C16/45557 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32926 ,  H01J37/32981 ,  H01L21/67253

摘要： System and methods of improving dynamic pressure response during recipe step transitions. An exemplary method may include changing at least one of a plurality of recipe parameters in accordance with a processing recipe while running the processing recipe on a semiconductor substrate in a processing chamber. The method may further include measuring a pressure response in the processing chamber responsive to the changing of the at least one of the plurality of recipe parameters, and determining a response error based on the pressure response and a model pressure response calculated based on the processing recipe. The method may further include, in response to determining that the response error may be greater than a threshold value, calculating an adjustment to an operation of a valve downstream of the processing chamber when changing the at least one of the plurality of recipe parameters in accordance with the processing recipe in subsequent runs.

公开(公告)号：US20240006158A1

公开(公告)日：2024-01-04

申请号：US17854456

申请日：2022-06-30

申请人： Applied Materials, Inc.

发明人： Vikram M. Bhosle ,  Timothy J. Miller ,  Jun Seok Lee ,  Deven Raj Mittal

IPC分类号： H01J37/32 ,  H01L21/3115 ,  H01L21/66

CPC分类号： H01J37/32412 ,  H01J37/3244 ,  H01J37/32981 ,  H01J37/32697 ,  H01L21/31155 ,  H01L22/26 ,  H01J2237/24585 ,  H01J2237/3365 ,  H01L21/31111

摘要： A method for reducing a wet etch rate of flowable chemical vapor deposition (FCVD) oxide layers in a semiconductor wafer, the method including performing a plasma doping operation on the semiconductor wafer using a primary dopant gas and a diluent gas adapted to reduce a wet etch rate of the FCVD oxide layer, wherein the dopant gas and the diluent gas are supplied by a gas source of a plasma doping system, wherein the diluent gas is provided in an amount of 0.01%-5% by volume of the total amount of gas supplied by the gas source 36 during the plasma doping operation, and wherein the primary dopant gas is He and the diluent gas is selected from a group including of CH4, CO, CO2, and CF2.

公开(公告)号：US20170050223A1

公开(公告)日：2017-02-23

申请号：US15243769

申请日：2016-08-22

申请人： The United States of America as represented by the Secretary of the Navy

发明人： Mary M. Graupmann ,  Christopher H. Clark ,  Michael L. Bishop

IPC分类号： B08B7/00 ,  G01N33/00

CPC分类号： G01N33/0009 ,  H01J37/32862 ,  H01J37/32981

摘要： Contaminant cleaning systems and related methods are provided. Exemplary embodiments include a reactive substance generator to produce or transfer reactive substance(s) that react with contaminant(s) on an item into a cleaning chamber. An analysis section can be attached to the cleaning chamber to perform gas analysis on gas samples brought into the analysis chamber that measure reaction byproducts from the reactive substance(s) interaction with the contaminants. An exemplary valve system can selectively couple the reactive substance generator, the analysis section, and the cleaning chamber. An exemplary pumping system, in combination with the valve system, can selectively generate differential pressure/vacuum levels between the reactive substance generator vs cleaning chamber as well as between the cleaning chamber and analysis section. For example, the analysis chamber can be configured to have a higher vacuum than the cleaning chamber to facilitate passage of gas test samples into the analysis chamber.

摘要翻译： 提供污染物清洁系统及相关方法。 示例性实施例包括用于产生或转移与物品上的污染物反应进入清洁室的反应物质的反应物质发生器。 分析部分可以连接到清洁室，以对进入分析室的气体样品进行气体分析，测量来自反应物质与污染物的相互作用的反应副产物。 示例性的阀系统可以选择性地联接反应物质发生器，分析部分和清洁室。 与阀系统组合的示例性泵送系统可以选择性地在反应物质发生器与清洁室之间以及清洁室和分析部之间产生差压/真空水平。 例如，分析室可被配置为具有比清洁室更高的真空度，以便气体测试样品通过分析室。

公开(公告)号：US09318305B2

公开(公告)日：2016-04-19

申请号：US14230133

申请日：2014-03-31

申请人： National Cheng Kung University

发明人： Jiunn-Der Liao ,  Pei-Lin Shao

IPC分类号： H01J7/24 ,  H01J37/32 ,  A61N1/44

CPC分类号： A61N1/44 ,  A61M37/00 ,  H01J37/32449 ,  H01J37/32981 ,  H05H2245/122

摘要： The object of the present invention is to provide a method for producing a micro-plasma with biocompatibility. The produced micro-plasma is a low temperature, adjustable micro-plasma with low energy consumption. The method provides a device comprising a first gas storage unit, a second gas storage unit, a unit for producing the micro-plasma, and a power supply unit.

摘要翻译： 本发明的目的是提供一种具有生物相容性的微血浆的制造方法。 所生产的微等离子体是低能量可调微型等离子体，能耗低。 该方法提供了包括第一气体存储单元，第二气体存储单元，用于产生微等离子体的单元和电源单元的装置。

公开(公告)号：US20150279629A1

公开(公告)日：2015-10-01

申请号：US14230133

申请日：2014-03-31

申请人： National Cheng Kung University

发明人： Jiunn-Der LIAO

IPC分类号： H01J37/32 ,  A61N1/44

CPC分类号： A61N1/44 ,  A61M37/00 ,  H01J37/32449 ,  H01J37/32981 ,  H05H2245/122

摘要： The object of the present invention is to provide a method for producing a micro-plasma with biocompatibility. The produced micro-plasma is a low temperature, adjustable micro-plasma with low energy consumption. The method provides a device comprising a first gas storage unit, a second gas storage unit, a unit for producing the micro-plasma, and a power supply unit.

摘要翻译： 本发明的目的是提供一种具有生物相容性的微血浆的制造方法。 所生产的微等离子体是低能量可调微型等离子体，能耗低。 该方法提供了包括第一气体存储单元，第二气体存储单元，用于产生微等离子体的单元和电源单元的装置。

公开(公告)号：US08933399B2

公开(公告)日：2015-01-13

申请号：US14123310

申请日：2012-04-09

申请人： Makoto Sampei

发明人： Makoto Sampei

IPC分类号： H01J49/40 ,  H01J49/10 ,  G01N33/18 ,  H01J49/02 ,  H01J37/32 ,  G01N27/62 ,  H01J49/06

CPC分类号： H01J49/02 ,  G01N27/624 ,  H01J37/32862 ,  H01J37/32917 ,  H01J37/32935 ,  H01J37/32981 ,  H01J37/3299 ,  H01J49/067

摘要： When a specimen from a specimen ionizing unit is not sufficiently ionized, is caused to remain in sites other than a pore in an introducing section and be deposited as a product such as an oxide or carbide, which causes a deterioration in the performance of the mass spectrometry device. The mass spectrometry device has a specimen ionizing section for ionizing a specimen, a specimen-introduction regulating chamber into which ions of the ionized specimen are introduced, a differential evacuation chamber located downstream of the specimen-introduction regulating chamber, and an analyzing section located at the downstream side of the differential evacuation chamber, in which a discharge generating means is formed for generating an electric discharge inside the specimen-introduction regulating chamber and/or the differential evacuation chamber. The discharge generating means has a specimen introducing section electrode and a first-pore-section-forming member located oppositely to each other inside the specimen-introduction regulating chamber.

摘要翻译： 当来自试样离子化单元的试样没有充分离子化时，导致在导入部中残留在孔以外的部位，作为氧化物或碳化物等的制品析出，导致质量的性能下降 光谱仪 该质谱装置具有用于使试样离子化的试样离子化部，引入离子化试样的离子的试样导入调节室，位于试样导入调节室下游的差动抽空室，以及分析部 其中形成有用于在试样导入调节室和/或差动抽空室内产生放电的排放发生装置的差动排空室的下游侧。 放电产生装置具有在试样导入调节室内部彼此相对设置的试样导入部电极和第一孔部形成部件。

公开(公告)号：US20130055818A1

公开(公告)日：2013-03-07

申请号：US13224112

申请日：2011-09-01

申请人： Joachim Doehler

发明人： Joachim Doehler

IPC分类号： G01L11/02

CPC分类号： G01L11/02 ,  G01N15/14 ,  G01N21/51 ,  G01N21/73 ,  G01N2021/215 ,  H01J37/32816 ,  H01J37/32935 ,  H01J37/32981 ,  H01J37/3299

摘要： Processes of identifying small pressure irregularities in a system used for continuous plasma deposition are provided. Sensitive light scattering is used to detect the presence of nucleated particles in a detection area that is outside the plasma region of high electric field whereby the presence of the particles indicates a pressure abnormality in the plasma deposition chamber. The pressure of the plasma deposition chamber is then adjusted to reduce or eliminate the presence of particles within the detection area and to optimize deposition of material on a substrate.

摘要翻译： 提供了确定用于连续等离子体沉积的系统中的小压力不规则性的方法。 敏感光散射用于检测在高电场等离子体区域外的检测区域中有核粒子的存在，由此存在颗粒表示等离子体沉积室中的压力异常。 然后调整等离子体沉积室的压力以减少或消除检测区域内的颗粒的存在并优化材料在基底上的沉积。

公开(公告)号：US20110295554A1

公开(公告)日：2011-12-01

申请号：US13115401

申请日：2011-05-25

申请人： Kye Hyun Baek ,  Sangwuk Park ,  Geum Jung Seong ,  Yongjin Kim

发明人： Kye Hyun Baek ,  Sangwuk Park ,  Geum Jung Seong ,  Yongjin Kim

IPC分类号： G06F19/00 ,  G06F15/00 ,  G06F17/10

CPC分类号： H01L21/3065 ,  G05B17/02 ,  H01J37/32853 ,  H01J37/3288 ,  H01J37/32981 ,  H01J37/3299

摘要： Disclosed is an apparatus for processing a semiconductor and a method for generating a seasoning process of a reaction chamber. The method may include generating plasma in the reaction chamber using a production process recipe, obtaining at least one reference measurement value related to a byproduct of the generated plasma, performing a plurality of seasoning tests on the chamber to obtain a plurality of test results, generating an empirical model by forming at least one relational expression correlating variables manipulated during the performing of the plurality of seasoning tests to the plurality of test results, and estimating a seasoning process by using the at least one relational expression to estimate at least one estimated calculation value.

摘要翻译： 公开了一种用于处理半导体的装置和用于产生反应室的调味过程的方法。 该方法可以包括使用生产工艺配方在反应室中产生等离子体，获得与产生的等离子体的副产物相关的至少一个参考测量值，在室上执行多个调味试验以获得多个测试结果，产生 通过形成至少一个关系表达式的经验模型，所述至少一个关系表达将在执行多个调味测试期间操纵的变量与多个测试结果相关联，并且通过使用至少一个关系表达式估计调节过程以估计至少一个估计的计算值 。