公开(公告)号：US20140124795A1

公开(公告)日：2014-05-08

申请号：US13677899

申请日：2012-11-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  BAY ZU PRECISION CO., LTD.

Inventor： Shun-Ming Chen ,  Chien-Chih Huang ,  Joel P. Desouza ,  Augustin J. Hong ,  Jeehwan Kim ,  Chien-Yeh Ku ,  Devendra K. Sadana ,  Chuan-Wen Wang

IPC: H01L31/0236 ,  H01L31/028

CPC classification number: H01L31/022483 ,  H01L31/022425 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/548

Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.