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公开(公告)号：US11791349B2
公开(公告)日：2023-10-17
申请号：US17377399
申请日：2021-07-16
Inventor： Yuming Xia , En-Tsung Cho , Chongwei Tang
IPC: H01L27/12
CPC classification number: H01L27/1259 , H01L27/124 , H01L27/127 , H01L27/1222 , H01L27/1262 , H01L27/1292
Abstract: The present application discloses a manufacturing method for a display panel and the display panel, and the manufacturing method includes a manufacture procedure of forming an array substrate, where the manufacture procedure of forming an array substrate includes: forming a buffer layer with a preset pattern on a glass substrate; placing the glass substrate with the buffer layer formed thereon into an electrochemical deposition device, and performing electrochemical deposition to form a copper alloy metal layer corresponding to the buffer layer; heating and annealing the copper alloy metal layer to form a first metal layer; sequentially forming an insulating layer, an active layer, a second metal layer, a passivation layer and a transparent electrode layer on the first metal layer, where the first metal layer includes a buffer layer and a copper alloy metal layer.
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公开(公告)号：US11749693B2
公开(公告)日：2023-09-05
申请号：US17194484
申请日：2021-03-08
Inventor： Yuming Xia , En-tsung Cho , Lidan Ye
CPC classification number: H01L27/1259 , H01L21/0214 , H01L21/0217 , H01L21/0228 , H01L21/02164
Abstract: Disclosed are a manufacturing method of an array substrate, an array substrate and a display device. The manufacturing method of the array substrate includes: providing a substrate; depositing and patterning a gate layer on the substrate; depositing a protective layer on the substrate covered with the gate layer by atomic layer deposition; and depositing and patterning an amorphous silicon layer and an ohmic contact layer on the protective layer. The uniform protective layer of the present disclosure reduces the influence on the field effect mobility of the thin film transistor, makes the display of the product more stable, and improves the display effect.
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公开(公告)号：US11644727B2
公开(公告)日：2023-05-09
申请号：US17238155
申请日：2021-04-22
Inventor： Yang Pu , WenChin Hung , Wei Li
IPC: G02F1/1362 , G02B5/28 , G02F1/1343 , G02F1/1335
CPC classification number: G02F1/136295 , G02B5/286 , G02F1/133514 , G02F1/134318 , G02F1/133516
Abstract: A display panel, a manufacturing method of the display panel, and a display device are disclosed. The display panel includes a first substrate and a second substrate. The first substrate includes a first base, a light-shielding layer disposed on the first base, and a color filter layer disposed on the first base, and a common electrode layer disposed on the light-shielding layer and the color filter layer. The common electrode layer is provided with an opening at a position opposite to the color filter layer.
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公开(公告)号：US11574939B2
公开(公告)日：2023-02-07
申请号：US17159445
申请日：2021-01-27
Inventor： Yuming Xia , En-tsung Cho , Wei Li
Abstract: Disclosed are a method for manufacturing an array substrate, an array substrate and a display device. The method includes the following operations: sequentially forming a gate, a gate insulation layer, an active layer, an ohmic contact layer and a metal layer on a base substrate; forming a photolithography mask on the metal layer, a thickness of the photolithography mask being between 1.7 μm and 1.8 μm; exposing the photolithography mask through a mask plate to make a uniformity of the photolithography mask in a half-exposed area of the mask plate reach a preset uniformity; and manufacturing the array substrate based on the exposed photolithography mask.
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15.发明授权公开(公告)号：US11515342B2
公开(公告)日：2022-11-29
申请号：US17352846
申请日：2021-06-21
Inventor： Xia Yuming , En-Tsung Cho , Chongwei Tang
IPC: H01L27/12 , G02F1/1368 , H01L21/288
Abstract: A gate unit and a manufacturing method thereof, a method of manufacturing an array substrate, and a display mechanism are provided. The method of manufacturing a gate unit includes: providing a conductive layer on a substrate; forming a photoresist layer on a side of the conductive layer away from the substrate; exposing the photoresist layer, and then developing the photoresist layer to form a groove extending through the photoresist layer on the photoresist layer, so as to form the photoresist layer with a pattern; and electrochemically depositing a functional material on the photoresist layer with the pattern, and then removing the photoresist layer to obtain the conductive layer having a pattern layer formed thereon, so as to obtain the gate unit.
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Patent Agency Ranking
公开(公告)号：US11487150B2
公开(公告)日：2022-11-01
申请号：US17384333
申请日：2021-07-23
Inventor： Cheng-hung Chen , Wei Li
IPC: G02F1/13 , G02F1/1335 , H01L27/32 , H01L51/52
Abstract: Disclosed are a display panel and a display device. The display panel includes a panel body, the panel body including a display area and a non-display area around a periphery of the display area; and a decoration portion provided on the panel body and located in the display area.
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公开(公告)号：US11480829B2
公开(公告)日：2022-10-25
申请号：US17358304
申请日：2021-06-25
Inventor： Xiaodong Wang , Peixin Lin , Lidan Ye
IPC: G02F1/1339 , G02F1/1343 , G02F1/1368
Abstract: An array substrate, a method for manufacturing an array substrate, and a display device are provided. The array substrate includes a first substrate, a first common electrode layer, a second common electrode layer, a frame sealing adhesive and a conductive adhesive. The first common electrode layer is disposed at an edge of the first substrate and is in a grid shape; the second common electrode layer is disposed at an inner side the first common electrode layer, and includes a light-transmitting portion provided in a grid shape, and a gate insulating layer is provided on the light-transmitting portion. The frame sealing adhesive is disposed on the first common electrode layer. The conductive adhesive is disposed in the frame sealing adhesive and partially extends onto the gate insulating layer corresponding to the light-transmitting portion. The conductive adhesive is configured to electrically connect with a common electrode of a color filter substrate.
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公开(公告)号：US20220037438A1
公开(公告)日：2022-02-03
申请号：US17343787
申请日：2021-06-10
Inventor： Renhong ZHAN , Chongwei TANG
Abstract: Disclosed are a substrate, a method for manufacturing the substrate, and a display panel. The substrate includes a base, an active switch, an active light-emitting pixel array, and a reflective layer. The active switch is formed on the base. The reflective layer is formed on the base under the active switch and is disposed farther away from a light incident surface of the substrate than the active switch. The active light-emitting pixel array is coupled with the active switch. The active switch includes a polysilicon layer. The reflective layer totally covers the base and the reflective layer has a smooth surface.
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19.发明申请公开(公告)号：US20220028905A1
公开(公告)日：2022-01-27
申请号：US17383800
申请日：2021-07-23
Inventor： Yuming XIA , En-Tsung CHO , Lidan YE
IPC: H01L27/12
Abstract: A method for manufacturing a data line includes: forming a conductive layer on a substrate; forming a photoresist layer on a side of the conductive layer away from the substrate; exposing and then developing the photoresist layer to form a groove penetrating the photoresist layer, thus obtaining a patterned photoresist layer; and depositing a functional material electrochemically on the patterned photoresist layer, then removing the patterned photoresist layer to obtain the conductive layer with the patterned functional material layer, thereby obtaining the data line.
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20.发明授权公开(公告)号：US12211688B2
公开(公告)日：2025-01-28
申请号：US18412645
申请日：2024-01-15
Inventor： En-Tsung Cho , Wanfei Yong , Je-Hao Hsu , Yuming Xia , Haijiang Yuan
IPC: H01L21/02 , G02F1/1368 , H01L29/786
Abstract: A manufacturing method of a silicon nitride thin film, a thin film transistor, and a display panel are disclosed, the method including: providing a silane precursor into an atomic layer deposition apparatus for a preset time period, and remaining the silane precursor for a preset time period; providing an inert gas thereinto for a preset time period for the first time, and purging the silane precursor; providing a nitrogen supplying precursor for a preset time period, and remaining the nitrogen supplying precursor for a preset time period; providing the inert gas for a preset time period for the second time, and purging the nitrogen supplying precursor; repeating for a preset number of times the steps of providing the silane precursor, providing the inert gas for the first time, providing the nitrogen supplying precursor and providing the inert gas for the second time to form the silicon nitride thin film.
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