公开(公告)号：US20090064084A1

公开(公告)日：2009-03-05

申请号：US11850513

申请日：2007-09-05

Applicant: Ju-Te Chen ,  Chung-An Chen ,  Chi-Ching Huang ,  Wen-Tsung Wu ,  Shih-Ming Yen

Inventor： Ju-Te Chen ,  Chung-An Chen ,  Chi-Ching Huang ,  Wen-Tsung Wu ,  Shih-Ming Yen

IPC: G06F17/50

CPC classification number: G03F7/70558 ,  G03F7/705

Abstract: A prediction model for exposure dose is indicated by the following formula, E=E0+EC, wherein E represents an optimized exposure dose, E0 represents a preset exposure dose of a process control system, and EC represents an exposure dose compensation value, and EC=[(MTTdiff/X)/(CDmask/X)]×(ES/A′)×(Wlast+Wavg), wherein MTTdiff represents the differences between the MTT value of a previous lot and the MTT value of a next lot, CDmask represents the actual critical dimension of the mask, X represents the magnification of the mask, ES represents the actual exposure dose of a previous lot, A′ represents an experimental value obtained from the results of different lots, Wlast represents the last batch of weights and Wavg represents an average weight, and CDmask, ES, A′, Wlast and Wavg are set parameters built into the process control system.

Abstract translation: 曝光剂量的预测模型由以下公式表示，E = E0 + EC，其中E表示优化的曝光剂量，E0表示过程控制系统的预设曝光剂量，EC表示曝光剂量补偿值， EC = [（MTTdiff / X）/（CDmask / X）] x（ES / A'）x（Wlast + Wavg），在线公式描述=“内联公式”end =“lead” 其中MTTdiff表示之前批次的MTT值与下一批次的MTT值之间的差异，CDmask表示实际的临界尺寸 的掩模，X表示掩模的放大率，ES表示以前批次的实际曝光剂量，A'表示从不同批次的结果获得的实验值，Wlast表示最后一批重量，Wavg表示平均重量 ，CDmask，ES，A'，Wlast和Wavg是内置到过程控制系统中的设置参数。

公开(公告)号：US20060094214A1

公开(公告)日：2006-05-04

申请号：US11199159

申请日：2005-08-09

Applicant: Chi-Ching Huang ,  Ching-Chu Tseng

Inventor： Chi-Ching Huang ,  Ching-Chu Tseng

IPC: H01L21/22 ,  H01L21/38

CPC classification number: H01L21/3003 ,  C30B31/02 ,  H01L21/2254

Abstract: A semiconductor doping process uses hydrogen in a diffusion furnace to prevent platinum/gold atoms from gathering around a defect area of the semiconductor wafer. Platinum/gold atom aggregation caused by a micro defect in the semiconductor wafer is prevented in order to stabilize the semiconductor doping process and to improve reverse recover time (TRR) to further improve yield rate.

Abstract translation: 半导体掺杂工艺在扩散炉中使用氢以防止铂/金原子聚集在半导体晶片的缺陷区周围。 为了稳定半导体掺杂工艺并改善反向恢复时间（TRR）以进一步提高产率，防止了由半导体晶片中的微缺陷引起的白金/金原子聚集。

公开(公告)号：US20210315729A1

公开(公告)日：2021-10-14

申请号：US16923175

申请日：2020-07-08

Applicant: Chi-Ching Huang

Inventor： Chi-Ching Huang ,  Tzu-Yun Kao

IPC: A61F5/56

Abstract: A dental oral appliance for using inside an oral cavity, where the oral cavity has an upper row of teeth, a lower row of teeth, a tongue, and an upper jaw. The upper and lower row of teeth define a lingual side. The dental oral appliance includes a separating portion and a tongue supporting portion, where an upper teeth region is defined above the separating portion and a lower teeth region is defined underneath thereof. The upper teeth region is adjacently disposed around the upper row of teeth, and the lower teeth region is adjacently disposed around the lower row of teeth. The outer edge of the tongue supporting portion is connected to one side of the separating portion close to the tongue.

公开(公告)号：US20200337802A1

公开(公告)日：2020-10-29

申请号：US16392656

申请日：2019-04-24

Applicant: CHI-CHING HUANG

Inventor： CHI-CHING HUANG ,  MEI-HUI KAO

IPC: A61C1/08 ,  A61C8/00

Abstract: A telescopic casing includes first end portion, second end portion, first support spring, third end portion, and second support spring. Each of the first, second, and third end portions has a hollow tubular shape. Top end of first end portion is detachably coupled to dental handpiece. Top end of second end portion is nested by rear end of first end portion. First support spring is disposed in first end portion, wherein one end of first support spring abuts against top end of second end portion and the other end of first support spring abuts against first end portion. Top end of third end portion is nested by rear end of second end portion. Second support spring is disposed in second end portion, wherein one end of second support spring abuts against top end of third end portion and the other end of second support spring abuts against second end portion.