公开(公告)号：US20080211003A1

公开(公告)日：2008-09-04

申请号：US12117904

申请日：2008-05-09

Applicant: Eun A. Lee ,  Hai Won Kim

Inventor： Eun A. Lee ,  Hai Won Kim

IPC: H01L27/108

CPC classification number: H01L28/40

Abstract: The present invention relates to a capacitor in semiconductor device and a method of manufacturing the same, wherein, owing to formation of a lower electrode and an upper electrode into a stack structure of a poly-silicon layer and an aluminum (Al) layer and formation of an alumina (Al2O3) film as a dielectric film, the lower electrode is formed into a stack structure of the poly-silicon layer-aluminum (Al) layer, thus increasing a surface area of electrodes due to the absence of oxidation during annealing, and preventing degeneration of the device, and use of the dielectric film including a high-dielectric constant material layer enables reduction of the dielectric film's thickness. Accordingly, the present invention is capable of increasing capacitance, is capable of reducing leakage current and improving dielectric breakdown characteristics via internal formation of an MIM capacitor, and is capable of reducing production costs by performing a continuous process via use of a single piece of equipment.

Abstract translation: 本发明涉及一种半导体器件中的电容器及其制造方法，其中，由于将下电极和上电极形成为多晶硅层和铝（Al）层的叠层结构和形成 的作为电介质膜的氧化铝（Al 2 O 3 O 3）膜，下电极形成为多晶硅 - 铝（Al）层的叠层结构 因此，由于退火时不会发生氧化而使电极的表面积增加，并且能够防止器件变性，并且使用包含高介电常数材料层的电介质膜能够降低电介质膜的厚度。 因此，本发明能够增加电容，能够通过MIM电容器的内部形成来减少泄漏电流和提高电介质击穿特性，并能够通过使用单件设备进行连续的处理来降低生产成本 。

公开(公告)号：US20070264770A1

公开(公告)日：2007-11-15

申请号：US11618796

申请日：2006-12-30

Applicant: Keum Bum Lee ,  Hai Won Kim ,  Ho Jin Cho ,  Jun Soo Chang ,  Eun A. Lee ,  Dong Su Park

Inventor： Keum Bum Lee ,  Hai Won Kim ,  Ho Jin Cho ,  Jun Soo Chang ,  Eun A. Lee ,  Dong Su Park

IPC: H01L21/8242 ,  H01L29/92

CPC classification number: H01L21/3141 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0234 ,  H01L27/10852 ,  H01L28/91

Abstract: A method for forming a capacitor includes forming a concave mold over a semiconductor substrate. A storage node is formed on the concave mold. A dielectric layer including a zirconium oxide (ZrO2) layer is deposited over the storage node at a first temperature. A radical pile-up treatment on the dielectric layer is performed in an atmosphere including radicals at a second temperature higher than the first temperature to induce crystallization of the dielectric layer. A plate node is formed over the dielectric layer.

Abstract translation: 形成电容器的方法包括在半导体衬底上形成凹模。 存储节点形成在凹模上。 包含氧化锆（ZrO 2）层的电介质层在第一温度下沉积在存储节点上。 在包括自由基的气氛中，在高于第一温度的第二温度下进行介电层上的自由基堆积处理，以诱导电介质层的结晶。 在该电介质层上形成一个平板节点。

公开(公告)号：US07713831B2

公开(公告)日：2010-05-11

申请号：US11758507

申请日：2007-06-05

Applicant: Cheol-Hwan Park ,  Dong-Su Park ,  Eun A. Lee ,  Hye Jin Seo

Inventor： Cheol-Hwan Park ,  Dong-Su Park ,  Eun A. Lee ,  Hye Jin Seo

IPC: H01L21/20

CPC classification number: H01L28/91 ,  H01L27/10852

Abstract: A method for forming a capacitor in a semiconductor device is disclosed. The method includes forming a storage node electrode on a semiconductor substrate, forming a dielectric layer having a high dielectric constant on the storage node electrode, depositing a plate electrode on the dielectric layer, thereby forming by-product impurities, and removing by-product impurities remaining on the plate electrode by introducing a hydrogen (H) atom-containing gas onto the semiconductor substrate while depositing a capping layer on the plate electrode.

Abstract translation: 公开了一种在半导体器件中形成电容器的方法。 该方法包括在半导体衬底上形成存储节点电极，在存储节点电极上形成具有高介电常数的电介质层，在电介质层上沉积平板电极，从而形成副产物杂质，除去副产物杂质 通过在半导体衬底上引入含氢（H）原子的气体，同时在平板电极上沉积覆盖层而残留在平板电极上。

公开(公告)号：US20080160716A1

公开(公告)日：2008-07-03

申请号：US11770522

申请日：2007-06-28

Applicant: Hye Jin Seo ,  Eun A. Lee ,  An Bae Lee

Inventor： Hye Jin Seo ,  Eun A. Lee ,  An Bae Lee

IPC: H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/76229

Abstract: A method for forming an isolation layer in a semiconductor device includes forming a trench inside a semiconductor substrate, forming a fluid insulating layer over the semiconductor substrate, thereby filling the trench with the fluid insulating layer, curing the semiconductor substrate by plasma oxidation to densify the fluid insulating layer, and planarizing the fluid insulating layer to form an isolation layer.

Abstract translation: 在半导体器件中形成隔离层的方法包括在半导体衬底内形成沟槽，在半导体衬底上形成流体绝缘层，从而用流体绝缘层填充沟槽，通过等离子体氧化固化半导体衬底， 流体绝缘层，并且平坦化流体绝缘层以形成隔离层。