公开(公告)号：US07745323B2

公开(公告)日：2010-06-29

申请号：US11267994

申请日：2005-11-07

申请人： Dong-Su Park ,  Su Ho Kim

发明人： Dong-Su Park ,  Su Ho Kim

IPC分类号： H01L21/4763

CPC分类号： H01L23/53295 ,  H01L21/02126 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/316 ,  H01L21/31616 ,  H01L21/31633 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein is a metal interconnection structure of a semiconductor device, comprising lower metal interconnection layers disposed on a semiconductor substrate, a buffer layer made of a metal oxide disposed thereon, an intermetallic dielectric layer made of a low-k material disposed on the buffer layer of the metal oxide, and an upper metal interconnection layer disposed on the intermetallic dielectric layer and electrically connected through the intermetallic dielectric layer and buffer layer to the lower metal interconnection layers.

摘要翻译： 本文公开了一种半导体器件的金属互连结构，其包括设置在半导体衬底上的下部金属互连层，由其上设置的金属氧化物制成的缓冲层，由设置在缓冲层上的低k材料制成的金属间介电层 以及设置在金属间介电层上并通过金属间介电层和缓冲层电连接到下金属互连层的上金属互连层。

公开(公告)号：US07713831B2

公开(公告)日：2010-05-11

申请号：US11758507

申请日：2007-06-05

申请人： Cheol-Hwan Park ,  Dong-Su Park ,  Eun A. Lee ,  Hye Jin Seo

发明人： Cheol-Hwan Park ,  Dong-Su Park ,  Eun A. Lee ,  Hye Jin Seo

IPC分类号： H01L21/20

CPC分类号： H01L28/91 ,  H01L27/10852

摘要： A method for forming a capacitor in a semiconductor device is disclosed. The method includes forming a storage node electrode on a semiconductor substrate, forming a dielectric layer having a high dielectric constant on the storage node electrode, depositing a plate electrode on the dielectric layer, thereby forming by-product impurities, and removing by-product impurities remaining on the plate electrode by introducing a hydrogen (H) atom-containing gas onto the semiconductor substrate while depositing a capping layer on the plate electrode.

摘要翻译： 公开了一种在半导体器件中形成电容器的方法。 该方法包括在半导体衬底上形成存储节点电极，在存储节点电极上形成具有高介电常数的电介质层，在电介质层上沉积平板电极，从而形成副产物杂质，除去副产物杂质 通过在半导体衬底上引入含氢（H）原子的气体，同时在平板电极上沉积覆盖层而残留在平板电极上。

公开(公告)号：US06852136B2

公开(公告)日：2005-02-08

申请号：US10021322

申请日：2001-12-12

申请人： Dong-su Park ,  Kwang-seok Jeon

发明人： Dong-su Park ,  Kwang-seok Jeon

IPC分类号： H01G4/33 ,  H01L21/02 ,  H01L21/314 ,  H01L21/318 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  H01G9/00

CPC分类号： H01L21/02183 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/02356 ,  H01L21/3144 ,  H01L28/40 ,  Y10T29/417 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49128

摘要： A method for manufacturing a capacitor using a tantalum oxy nitride (TaON) film in a process for a semiconductor device. More particularly, a method for manufacturing a capacitor which reduces a number of steps and thus increases yield by in-situ performing P-doping after forming a MPS (Metastable Poly Silicon) on a lower electrode and forming a nitride film before forming a tantalum oxy nitride film to prevent the concentration of phosphor contained in the lower electrode from being reduced by removing the phosphor on the surface of the lower electrode in a cleaning process between the above two steps, for thereby increasing the capacitance of the capacitor.

摘要翻译： 一种在半导体器件的制造方法中，使用氮氧化钽（TaON）膜制造电容器。 更具体地说，一种用于制造电容器的方法，其减少了多个步骤，从而通过在下电极上形成MPS（可转移多晶硅）之后进行原位进行P掺杂而提高产量，并在形成钽氧化物之前形成氮化物膜 通过在上述两个步骤之间的清洁处理中去除下部电极的表面上的荧光体来防止下部电极中所含的荧光体的浓度的降低，从而增加电容器的电容。

公开(公告)号：US06495414B2

公开(公告)日：2002-12-17

申请号：US09867659

申请日：2001-05-31

申请人： Seung Kyu Han ,  Dong Su Park

发明人： Seung Kyu Han ,  Dong Su Park

IPC分类号： H01L218242

CPC分类号： H01L28/75 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02356 ,  H01L21/28568 ,  H01L21/3145 ,  H01L28/40

摘要： The present invention discloses a method for manufacturing a capacitor of a semiconductor memory device. The disclosed present invention comprises steps of forming a lower electrode made of a conductive polysilicon film or a conductive amorphous silicon film on a semiconductor substrate; forming a nitride film over the lower electrode; depositing an amorphous TaON thin film over the nitride film; subjecting the amorphous TaON thin film to a thermal treatment to effect a crystallization thereof; and forming a laminated structure composed of a TiON film and a doped silicon film for an upper electrode on the crystallized TaON thin film.

摘要翻译： 本发明公开了一种制造半导体存储器件的电容器的方法。本发明包括在半导体衬底上形成由导电多晶硅膜或导电非晶硅膜制成的下电极的步骤; 在下电极上形成氮化膜; 在氮化物膜上沉积无定形TaON薄膜; 对无定形TaON薄膜进行热处理以使其结晶化; 并且在结晶的TaON薄膜上形成由TiON膜和用于上电极的掺杂硅膜构成的层压结构。

公开(公告)号：US20070264770A1

公开(公告)日：2007-11-15

申请号：US11618796

申请日：2006-12-30

申请人： Keum Bum Lee ,  Hai Won Kim ,  Ho Jin Cho ,  Jun Soo Chang ,  Eun A. Lee ,  Dong Su Park

发明人： Keum Bum Lee ,  Hai Won Kim ,  Ho Jin Cho ,  Jun Soo Chang ,  Eun A. Lee ,  Dong Su Park

IPC分类号： H01L21/8242 ,  H01L29/92

CPC分类号： H01L21/3141 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0234 ,  H01L27/10852 ,  H01L28/91

摘要： A method for forming a capacitor includes forming a concave mold over a semiconductor substrate. A storage node is formed on the concave mold. A dielectric layer including a zirconium oxide (ZrO2) layer is deposited over the storage node at a first temperature. A radical pile-up treatment on the dielectric layer is performed in an atmosphere including radicals at a second temperature higher than the first temperature to induce crystallization of the dielectric layer. A plate node is formed over the dielectric layer.

摘要翻译： 形成电容器的方法包括在半导体衬底上形成凹模。 存储节点形成在凹模上。 包含氧化锆（ZrO 2）层的电介质层在第一温度下沉积在存储节点上。 在包括自由基的气氛中，在高于第一温度的第二温度下进行介电层上的自由基堆积处理，以诱导电介质层的结晶。 在该电介质层上形成一个平板节点。

公开(公告)号：US07084072B2

公开(公告)日：2006-08-01

申请号：US10874983

申请日：2004-06-23

申请人： Cheol Hwan Park ,  Sang Ho Woo ,  Chang Rock Song ,  Dong Su Park ,  Tae Hyeok Lee

发明人： Cheol Hwan Park ,  Sang Ho Woo ,  Chang Rock Song ,  Dong Su Park ,  Tae Hyeok Lee

IPC分类号： H01L21/302

CPC分类号： H01L21/28141 ,  H01L21/3144 ,  H01L21/3185 ,  H01L27/1052 ,  H01L27/10873

摘要： Disclosed is a method of manufacturing a semiconductor device. The method includes the steps of forming a gate in a cell region and a peripheral region of a substrate, depositing a buffer oxide layer on the gate and the substrate, annealing a resultant structure of the substrate, depositing a nitride spacer layer on the buffer oxide layer, depositing an oxide spacer layer on the nitride spacer layer, forming an oxide spacer at the peripheral region of the substrate, and removing the oxide spacer layer remaining in the cell region. The annealing step is additionally carried out after depositing the buffer oxide layer so as to improve the interfacial surface characteristic and film quality, so that oxide etchant is prevented from penetrating into the silicon substrate during the wet dip process. Unnecessary voids are prevented from being created in the silicon substrate.

摘要翻译： 公开了半导体器件的制造方法。 该方法包括以下步骤：在衬底的单元区域和外围区域中形成栅极，在栅极和衬底上沉积缓冲氧化物层，退火所得衬底的结构，在缓冲氧化物上沉积氮化物间隔层 在所述氮化物间隔层上沉积氧化物间隔层，在所述衬底的周围区域形成氧化物间隔物，以及去除所述电池区域中剩余的氧化物间隔层。 在沉积缓冲氧化物层之后另外进行退火步骤，以改善界面表面特性和膜质量，从而防止在湿法浸渍过程中氧化物蚀刻剂渗入硅衬底。 防止在硅衬底中产生不必要的空隙。

公开(公告)号：US06964930B2

公开(公告)日：2005-11-15

申请号：US10739620

申请日：2003-12-18

申请人： Dong Su Park ,  Tae Hyeok Lee ,  Chang Rock Song ,  Cheol Hwan Park

发明人： Dong Su Park ,  Tae Hyeok Lee ,  Chang Rock Song ,  Cheol Hwan Park

IPC分类号： H01L21/318 ,  C23C16/02 ,  C23C16/34 ,  C23C16/56 ,  H01L21/20 ,  H01L21/306 ,  H01L21/314 ,  H01L29/51 ,  H01L29/78 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02247 ,  C23C16/0227 ,  C23C16/345 ,  C23C16/56 ,  H01L21/02052 ,  H01L21/022 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/3144 ,  H01L21/3145 ,  H01L29/513 ,  H01L29/518 ,  Y10S438/954

摘要： In fabricating a dielectric layer, a semiconductor substrate which has been washed is provided. A first nitride film is formed by loading the substrate in a first furnace and subjecting the substrate to a first nitride treatment. A first oxide film is formed by unloading the substrate having the first nitride film out of the first furnace and subjecting the substrate to a first nitride treatment by introducing air while the substrate is unloaded. A second nitride film is formed by loading the substrate having the first oxide film in a second furnace and subjecting the substrate to a second nitride treatment. A second oxide film is formed by subjecting the top surface of the second nitride film to a second oxide treatment.

摘要翻译： 在制造电介质层时，提供已洗涤的半导体衬底。 第一氮化物膜通过将基板装载在第一炉中并对基板进行第一氮化物处理而形成。 通过将具有第一氮化物膜的衬底从第一炉中卸出并通过在衬底卸载的同时引入空气对衬底进行第一氮化物处理来形成第一氧化物膜。 通过将具有第一氧化物膜的衬底装载在第二炉中并对衬底进行第二氮化物处理来形成第二氮化物膜。 通过对第二氮化物膜的顶表面进行第二氧化物处理来形成第二氧化物膜。

公开(公告)号：US06913963B2

公开(公告)日：2005-07-05

申请号：US10331422

申请日：2002-12-30

申请人： Tae Hyeok Lee ,  Cheol Hwan Park ,  Dong Su Park ,  Sang Ho Woo

发明人： Tae Hyeok Lee ,  Cheol Hwan Park ,  Dong Su Park ,  Sang Ho Woo

IPC分类号： C23C16/42 ,  H01L21/02 ,  H01L21/28 ,  H01L21/31 ,  H01L21/314 ,  H01L21/318 ,  H01L21/82 ,  H01L21/8234 ,  H01L21/8242 ,  H01L21/8244 ,  H01L27/04 ,  H01L27/108

CPC分类号： H01L28/40 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/3185

摘要： A method for fabricating a capacitor for a semiconductor device is disclosed, which comprises the steps of: forming a storage node electrode on a semiconductor wafer, forming a dielectric layer made of a cyclic silicon nitride layer on the surface of the storage node electrode, and forming an upper electrode on the dielectric layer; lowering the thickness Teff of the dielectric layer and improving leakage current characteristics through use of a cyclic Si3N4 or a cyclic SiOxNy (wherein x falls between 0.1 and 0.9 and y falls between 0.1 and 2), having a large oxidation resistance and high dielectric ratio, as a dielectric.

摘要翻译： 公开了一种制造用于半导体器件的电容器的方法，其包括以下步骤：在半导体晶片上形成存储节点电极，在存储节点电极的表面上形成由环状氮化硅层制成的电介质层，以及 在所述电介质层上形成上电极; 降低电介质层的厚度T eff，并且通过使用环状Si 3 N 4 N或环状SiO

公开(公告)号：US06884678B2

公开(公告)日：2005-04-26

申请号：US10608429

申请日：2003-06-30

申请人： Dong Su Park ,  Tae Hyeok Lee ,  Cheol Hwan Park

发明人： Dong Su Park ,  Tae Hyeok Lee ,  Cheol Hwan Park

IPC分类号： H01L21/8242 ,  H01L21/02 ,  H01L21/314 ,  H01L21/318

CPC分类号： H01L21/3185 ,  H01L21/0217 ,  H01L21/02183 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L27/10852 ,  H01L28/91

摘要： A method for forming of a capacitor wherein an etching barrier layer comprising a stacked structure of a nitride film and a tantalum oxide film is disclosed. The method comprises the steps of: forming an etching barrier layer on an interlayer insulating film having a storage electrode contact plug therein, the etching barrier layer comprising a stacked structure of a nitride film and a tantalum oxide film; forming an oxide film on the etching barrier layer; selectively etching the oxide film and the etching barrier layer to form an opening exposing the storage electrode contact plug; depositing a storage electrode layer on the bottom and the inner walls of the opening; and removing the oxide film, whereby forming a storage electrode.

摘要翻译： 一种形成电容器的方法，其中公开了包括氮化物膜和钽氧化物膜的叠层结构的蚀刻阻挡层。 该方法包括以下步骤：在其上具有存储电极接触插塞的层间绝缘膜上形成蚀刻阻挡层，所述蚀刻阻挡层包括氮化物膜和氧化钽膜的堆叠结构; 在蚀刻阻挡层上形成氧化膜; 选择性地蚀刻氧化膜和蚀刻阻挡层以形成暴露存储电极接触插塞的开口; 在开口的底部和内壁上沉积存储电极层; 除去氧化膜，由此形成存储电极。

公开(公告)号：US06597029B2

公开(公告)日：2003-07-22

申请号：US09880056

申请日：2001-06-14

申请人： Nam Kyeong Kim ,  Ki Seon Park ,  Dong Su Park ,  Byoung Kwon Ahn ,  Seung Kyu Han

发明人： Nam Kyeong Kim ,  Ki Seon Park ,  Dong Su Park ,  Byoung Kwon Ahn ,  Seung Kyu Han

IPC分类号： H01L2976

CPC分类号： H01L27/11502 ,  H01L21/3143 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/75

摘要： In the method for forming a capacitor of a nonvolatile semiconductor memory device, a TaON glue layer is formed over a semiconductor substrate, and a lower electrode is formed on the TaON glue layer. A ferroelectric film is then formed on the lower electrode, and an upper electrode is formed on the ferroelectric film.

摘要翻译： 在形成非易失性半导体存储器件的电容器的方法中，在半导体衬底上形成TaON胶层，在TaON胶层上形成下电极。 然后在下电极上形成铁电体膜，在铁电体膜上形成上电极。