Irradiance pulse heat-treating methods and apparatus
    11.
    发明授权
    Irradiance pulse heat-treating methods and apparatus 有权
    辐射脉冲热处理方法和装置

    公开(公告)号:US08693857B2

    公开(公告)日:2014-04-08

    申请号:US13182341

    申请日:2011-07-13

    Abstract: A method of heat-treating a workpiece includes generating an initial heating portion and a subsequent sustaining portion of an irradiance pulse incident on a target surface area of the workpiece. A combined duration of the initial heating portion and the subsequent sustaining portion is less than a thermal conduction time of the workpiece. The initial heating portion heats the target surface area to a desired temperature and the subsequent sustaining portion maintains the target surface area within a desired range from the desired temperature. Another method includes generating such an initial heating portion and subsequent sustaining portion of an irradiance pulse, monitoring at least one parameter indicative of a presently completed amount of a desired thermal process during the irradiance pulse, and modifying the irradiance pulse in response to deviation of the at least one parameter from an expected value.

    Abstract translation: 对工件进行热处理的方法包括产生入射到工件的目标表面区域上的辐照脉冲的初始加热部分和随后的维持部分。 初始加热部分和随后的维持部分的组合持续时间小于工件的热传导时间。 初始加热部分将目标表面积加热至所需温度,随后的维持部分将目标表面积保持在所需温度的期望范围内。 另一种方法包括生成辐照度脉冲的这种初始加热部分和随后的维持部分,在辐照脉冲期间监测指示目前完成的期望热处理量的至少一个参数,以及响应于辐射脉冲的偏差来修改辐照度脉冲 来自预期值的至少一个参数。

    IRRADIANCE PULSE HEAT-TREATING METHODS AND APPARATUS
    13.
    发明申请
    IRRADIANCE PULSE HEAT-TREATING METHODS AND APPARATUS 有权
    辐射脉冲热处理方法和装置

    公开(公告)号:US20080273867A1

    公开(公告)日:2008-11-06

    申请号:US12053102

    申请日:2008-03-21

    Abstract: A method of heat-treating a workpiece includes generating an initial heating portion and a subsequent sustaining portion of an irradiance pulse incident on a target surface area of the workpiece. A combined duration of the initial heating portion and the subsequent sustaining portion is less than a thermal conduction time of the workpiece. The initial heating portion heats the target surface area to a desired temperature and the subsequent sustaining portion maintains the target surface area within a desired range from the desired temperature. Another method includes generating such an initial heating portion and subsequent sustaining portion of an irradiance pulse, monitoring at least one parameter indicative of a presently completed amount of a desired thermal process during the irradiance pulse, and modifying the irradiance pulse in response to deviation of the at least one parameter from an expected value.

    Abstract translation: 对工件进行热处理的方法包括产生入射到工件的目标表面区域上的辐照脉冲的初始加热部分和随后的维持部分。 初始加热部分和随后的维持部分的组合持续时间小于工件的热传导时间。 初始加热部分将目标表面积加热至所需温度,随后的维持部分将目标表面积保持在所需温度的期望范围内。 另一种方法包括生成辐照度脉冲的这种初始加热部分和随后的维持部分,在辐照脉冲期间监测指示目前完成的期望热处理量的至少一个参数,以及响应于辐射脉冲的偏差来修改辐照度脉冲 来自预期值的至少一个参数。

    Temperature measurement and heat-treating methods and systems
    15.
    发明授权
    Temperature measurement and heat-treating methods and systems 有权
    温度测量和热处理方法和系统

    公开(公告)号:US07616872B2

    公开(公告)日:2009-11-10

    申请号:US11302600

    申请日:2005-12-14

    Abstract: Temperature measurement and heat-treating methods and systems. One method includes identifying a temperature of a first surface of a workpiece, and controlling energy of an irradiance flash incident on the first surface of the workpiece, in response to the temperature of the first surface. Identifying may include identifying the temperature of the first surface during an initial portion of the irradiance flash, and controlling may include controlling the power of a remaining portion of the irradiance flash. The first surface of the workpiece may include a device side of a semiconductor wafer.

    Abstract translation: 温度测量和热处理方法和系统。 一种方法包括识别工件的第一表面的温度,以及响应于第一表面的温度来控制入射在工件的第一表面上的辐照闪光的能量。 识别可以包括在辐照闪光的初始部分期间识别第一表面的温度,并且控制可以包括控制辐照闪光的剩余部分的功率。 工件的第一表面可以包括半导体晶片的器件侧。

    Temperature measurement and heat-treating methods and system
    16.
    发明授权
    Temperature measurement and heat-treating methods and system 有权
    温度测量和热处理方法及系统

    公开(公告)号:US07445382B2

    公开(公告)日:2008-11-04

    申请号:US10497447

    申请日:2002-12-23

    Abstract: Temperature measurement and heat-treating methods and systems. One method includes measuring a present intensity of radiation thermally emitted from a first surface of a workpiece, and identifying a present temperature of the first surface in response to the present intensity and at least one previous thermal property of the first surface. Preferably, the workpiece includes a semiconductor wafer, and the first and second surfaces respectively include device and substrate sides thereof. The present temperature of the device side is preferably identified while the device side is being irradiated, e.g. by an irradiance flash having a duration less than a thermal conduction time of the wafer. The device side temperature may be identified in response to a previous device side temperature, which may be identified in response to a previous temperature of the substrate side unequal to the previous device side temperature, and a temperature history of the wafer.

    Abstract translation: 温度测量和热处理方法和系统。 一种方法包括测量从工件的第一表面热发射的辐射的当前强度,并且响应于当前强度和第一表面的至少一个先前热性质来识别第一表面的当前温度。 优选地,所述工件包括半导体晶片,并且所述第一表面和所述第二表面分别包括其装置和基板侧。 器件侧的当前温度优选在器件侧被照射时识别。 通过具有小于晶片的热传导时间的持续时间的辐照闪光。 可以响应于先前的器件侧温度来识别器件侧温度,其可以响应于衬底侧的先前温度不等于先前器件侧温度和晶片的温度历史来识别。

    Temperature measurement and heat-treating methods
    17.
    发明申请
    Temperature measurement and heat-treating methods 有权
    温度测量和热处理方法

    公开(公告)号:US20060096677A1

    公开(公告)日:2006-05-11

    申请号:US11302600

    申请日:2005-12-14

    Abstract: Temperature measurement and heat-treating methods and systems. One method includes identifying a temperature of a first surface of a workpiece, and controlling energy of an irradiance flash incident on the first surface of the workpiece, in response to the temperature of the first surface. Identifying may include identifying the temperature of the first surface during an initial portion of the irradiance flash, and controlling may include controlling the power of a remaining portion of the irradiance flash. The first surface of the workpiece may include a device side of a semiconductor wafer.

    Abstract translation: 温度测量和热处理方法和系统。 一种方法包括识别工件的第一表面的温度,以及响应于第一表面的温度来控制入射在工件的第一表面上的辐照闪光的能量。 识别可以包括在辐照闪光的初始部分期间识别第一表面的温度,并且控制可以包括控制辐照闪光的剩余部分的功率。 工件的第一表面可以包括半导体晶片的器件侧。

    Temperature measurement and heat-treating metods and system
    18.
    发明申请
    Temperature measurement and heat-treating metods and system 有权
    温度测量和热处理方法和系统

    公开(公告)号:US20050063453A1

    公开(公告)日:2005-03-24

    申请号:US10497447

    申请日:2002-12-23

    Abstract: Temperature measurement and heat-treating methods and systems. One method includes measuring a present intensity of radiation thermally emitted from a first surface of a workpiece, and identifying a present temperature of the first surface in response to the present intensity and at least one previous thermal property of the first surface. Preferably, the workpiece includes a semiconductor wafer, and the first and second surfaces respectively include device and substrate sides thereof. The present temperature of the device side is preferably identified while the device side is being irradiated, e.g. by an irradiance flash having a duration less than a thermal conduction time of the wafer. The device side temperature may be identified in response to a previous device side temperature, which may be identified in response to a previous temperature of the substrate side unequal to the previous device side temperature, and a temperature history of the wafer.

    Abstract translation: 温度测量和热处理方法和系统。 一种方法包括测量从工件的第一表面热发射的辐射的当前强度,并且响应于当前强度和第一表面的至少一个先前热性质来识别第一表面的当前温度。 优选地,所述工件包括半导体晶片,并且所述第一表面和所述第二表面分别包括其装置和基板侧。 器件侧的当前温度优选在器件侧被照射时识别。 通过具有小于晶片的热传导时间的持续时间的辐照闪光。 可以响应于先前的器件侧温度来识别器件侧温度,其可以响应于衬底侧的先前温度不等于先前器件侧温度和晶片的温度历史来识别。

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