Increasing efficiency of wireless power transfer
    11.
    发明授权
    Increasing efficiency of wireless power transfer 有权
    提高无线电力传输的效率

    公开(公告)号:US08427100B2

    公开(公告)日:2013-04-23

    申请号:US12580689

    申请日:2009-10-16

    Abstract: Techniques are described herein that are capable of increasing efficiency of wireless power transfer. A wireless power transfer system includes features that allow the system to be deployed in public spaces such as airports or in commercial establishments such as restaurants or hotels to allow a user to recharge one or more portable electronic devices while away from home. To accommodate wireless recharging of a variety of device types and states, the system may receive parameters and/or state information associated with a portable electronic device to be recharged and may control the wireless power transfer in accordance with such parameters and/or state information. For instance, the system may increase efficiency of the wireless power transfer based on such parameters and/or state information. The system may also provide a secure and efficient means for obtaining required payment information from the user prior to the wireless power transfer, thereby facilitating fee-based recharging.

    Abstract translation: 这里描述了能够提高无线电力传输效率的技术。 无线电力传输系统包括允许将系统部署在诸如机场或诸如餐馆或酒店的商业场所的公共空间中以允许用户在远离家庭的同时对一个或多个便携式电子设备进行充电的特征。 为了适应各种设备类型和状态的无线充电,系统可以接收与要再充电的便携式电子设备相关联的参数和/或状态信息,并且可以根据这些参数和/或状态信息来控制无线功率传输。 例如,该系统可以基于这些参数和/或状态信息来提高无线功率传输的效率。 该系统还可以提供用于在无线电力传送之前从用户获得所需支付信息的安全且有效的手段,从而便于基于费用的充电。

    Bi-directional double nmos switch
    12.
    发明申请
    Bi-directional double nmos switch 有权
    双向双nmos开关

    公开(公告)号:US20060043499A1

    公开(公告)日:2006-03-02

    申请号:US10532922

    申请日:2003-09-22

    CPC classification number: H03K17/6874 H03K17/063

    Abstract: A semiconductor switch comprises two NMOS transistors coupled in an anti-series arrangement, and a gate control circuit coupled to both gates of the NMOS transistors. Both drains of the NMOS transistors are interconnected, and the gate control circuit is coupled to the drains interconnection. The required chip area is halved compared to prior art switches. Pumping the gates to higher voltages may cause a further reduction of the sizes of the NMOS transistors. In addition advantageously a large range of input and output voltages can be allowed between the sources of the NMOS transistors, whereby the sources act as input and output respectively of the switch, thus allowing application of the switch in a broad technical field.

    Abstract translation: 半导体开关包括以反串联方式耦合的两个NMOS晶体管,以及耦合到NMOS晶体管的两个栅极的栅极控制电路。 NMOS晶体管的两个漏极互连,并且栅极控制电路耦合到漏极互连。 与现有技术的开关相比,所需的芯片面积减半。 将栅极泵入较高电压可能会导致NMOS晶体管的尺寸进一步减小。 另外有利的是,可以在NMOS晶体管的源极之间允许大范围的输入和输出电压,由此源分别用作开关的输入和输出,从而允许开关在广泛的技术领域中应用。

Patent Agency Ranking