公开(公告)号：US08208109B2

公开(公告)日：2012-06-26

申请号：US12502576

申请日：2009-07-14

Applicant: Da-Wei Lee ,  Jia-Xing Lin ,  Tai-Ann Chen

Inventor： Da-Wei Lee ,  Jia-Xing Lin ,  Tai-Ann Chen

IPC: G02F1/1343

CPC classification number: G02F1/134336 ,  G02F1/1391

Abstract: A display system including a first set of conductive electrodes, a second set of conductive electrodes, and a display medium. The first set of conductive electrodes is configured to receive a selection signal. The second set of conductive electrodes is configured to interact with the first set of conductive electrodes for activating the reading or writing of display data. The second set of conductive electrodes is configured to receive a data signal and to activate the reading or writing of a target area of the display device, in response to the selection signal to the first set of conductive electrodes and the data signal to the second set of conductive electrodes. The display medium is movably coupled with the first and second sets of conductive electrodes. One or both of the first and the second sets of conductive electrodes have at least two electrically independent regions having an independent signal input for each region.

Abstract translation: 一种显示系统，包括第一组导电电极，第二组导电电极和显示介质。 第一组导电电极被配置为接收选择信号。 第二组导电电极被配置为与第一组导电电极相互作用以激活显示数据的读取或写入。 第二组导电电极被配置为响应于对第一组导电电极的选择信号和到第二组的数据信号而接收数据信号并激活对显示装置的目标区域的读取或写入 的导电电极。 显示介质可移动地与第一和第二组导电电极耦合。 第一和第二组导电电极中的一个或两个具有至少两个电独立区域，每个区域具有独立的信号输入。

公开(公告)号：US20100103401A1

公开(公告)日：2010-04-29

申请号：US12652566

申请日：2010-01-05

Applicant: Fang-Tsun Chu ,  Jia-Xing Lin

Inventor： Fang-Tsun Chu ,  Jia-Xing Lin

IPC: G03F7/20 ,  G03F1/00

CPC classification number: H01L21/0268 ,  B23K26/066 ,  H01L21/02532

Abstract: A method and a device for forming a poly-silicon film, using sequential lateral solidification (SLS) by laser irradiation through an optical device to pattern the laser beam so as to lengthen the crystalline grains and enhance the throughput. The optical device comprises a plurality of first transparent regions, a plurality of second transparent regions and a plurality of final transparent regions. The plurality of second transparent regions are disposed between the plurality of first transparent regions and the plurality of final transparent regions. The first transparent regions and the second transparent regions have a first width W1 and a first length L1, and the final transparent regions have a second width W2 and a second length L2. An mth first transparent region of the plurality of first transparent regions and an mth second transparent region of the plurality of second transparent regions are arranged in a tier-shape. An mth final transparent region of the plurality of final transparent regions is extended from the mth second transparent region of the plurality of second transparent regions.

Abstract translation: 一种用于形成多晶硅膜的方法和装置，其通过使用光学装置的激光照射使用顺序侧向固化（SLS）来对激光束进行图案化，以延长晶粒并提高生产量。 光学装置包括多个第一透明区域，多个第二透明区域和多个最终透明区域。 多个第二透明区域设置在多个第一透明区域和多个最终透明区域之间。 第一透明区域和第二透明区域具有第一宽度W1和第一长度L1，并且最终透明区域具有第二宽度W2和第二长度L2。 多个第一透明区域的第m个第一透明区域和多个第二透明区域的第m个第二透明区域被布置成层状。 多个最终透明区域的第m个最终透明区域从多个第二透明区域的第m个第二透明区域延伸。

公开(公告)号：US20080233718A1

公开(公告)日：2008-09-25

申请号：US11689498

申请日：2007-03-21

Applicant: Jia-Xing Lin ,  Fang-Tsun Chu ,  Hung-Tse Chen

Inventor： Jia-Xing Lin ,  Fang-Tsun Chu ,  Hung-Tse Chen

IPC: H01L21/20

CPC classification number: H01L21/268 ,  H01L21/02532 ,  H01L21/02675 ,  H01L27/1281 ,  H01L29/42384 ,  H01L29/66757

Abstract: A method of fabricating a semiconductor device includes providing a substrate, forming an amorphous silicon layer over the substrate, forming a patterned heat retaining layer over the amorphous silicon layer, doping the amorphous silicon layer to form a pair of doped regions in the amorphous silicon layer by using the patterned heat retaining layer as a mask, and irradiating the amorphous silicon layer to activate the pair of doped regions, forming a pair of activated regions, and form a crystallized region between the pair of activated regions.

Abstract translation: 制造半导体器件的方法包括提供衬底，在衬底上形成非晶硅层，在非晶硅层上形成图案化的保温层，掺杂非晶硅层以在非晶硅层中形成一对掺杂区域 通过使用图案化保温层作为掩模，并且照射非晶硅层以激活该对掺杂区域，形成一对激活区域，并在该对激活区域之间形成结晶区域。

公开(公告)号：US20070134892A1

公开(公告)日：2007-06-14

申请号：US11393747

申请日：2006-03-31

Applicant: Yu-Cheng Chen ,  Jia-Xing Lin ,  Hung-Tse Chen

Inventor： Yu-Cheng Chen ,  Jia-Xing Lin ,  Hung-Tse Chen

IPC: H01L21/20

CPC classification number: H01L21/02686 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L27/1281

Abstract: A silicon layer and a heat-retaining layer are formed on a substrate in turn, and a laser beam with a sharp energy density gradient is next utilized to perform a laser heating process for inducing super lateral growth crystallization occurred in part of the Si layer. The heat-retaining layer provides additional heating-enhancement function for the Si layer in crystallization so as to increase the super lateral growth length. Then, the laser beam is repeatedly moved to irradiate the substrate to finish the crystallization process for the full substrate.

Abstract translation: 依次在基板上形成硅层和保温层，接着利用具有尖锐的能量密度梯度的激光束进行激光加热处理，以引起部分Si层发生的超横向生长结晶。 保温层为结晶中的Si层提供额外的加热增强功能，以增加超横向生长长度。 然后，激光束被反复移动以照射基板以完成整个基板的结晶处理。

公开(公告)号：US20050079294A1

公开(公告)日：2005-04-14

申请号：US10772511

申请日：2004-02-05

Applicant: Jia-Xing Lin ,  Chi-Lin Chen ,  Yu-Cheng Chen ,  Yih-Rong Luo

Inventor： Jia-Xing Lin ,  Chi-Lin Chen ,  Yu-Cheng Chen ,  Yih-Rong Luo

IPC: B05D5/12 ,  C30B13/24 ,  C30B29/06 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L21/02686 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78603

Abstract: A heat sink layer is formed on portions of a substrate, and then an amorphous silicon layer is formed thereon. The heat coefficient of the heat sink layer is greater than that of the substrate. When an excimer laser heats the amorphous silicon layer to crystallize the amorphous silicon, nucleation sites are formed in the amorphous silicon layer on the heat sink layer. Next, laterally expanding crystallization occurs in the amorphous silicon layer on the substrate to form polysilicon having a crystal size of a micrometer.

Abstract translation: 在衬底的部分上形成散热层，然后在其上形成非晶硅层。 散热层的热系数大于衬底的热系数。 当准分子激光器加热非晶硅层以使非晶硅结晶时，在散热层上的非晶硅层中形成成核位点。 接着，在基板上的非晶硅层发生横向膨胀结晶，形成晶体尺寸为微米的多晶硅。

公开(公告)号：US07560365B2

公开(公告)日：2009-07-14

申请号：US11226679

申请日：2005-09-14

Applicant: Jia-Xing Lin ,  Chi-Lin Chen

Inventor： Jia-Xing Lin ,  Chi-Lin Chen

IPC: H01L21/36 ,  H01L21/20

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/78645

Abstract: A method for fabricating a semiconductor device includes providing a substrate, forming an amorphous silicon layer over the substrate, forming a heat retaining layer on the amorphous silicon layer, patterning the heat retaining layer, and irradiating the patterned heat retaining layer.

Abstract translation: 一种制造半导体器件的方法包括提供衬底，在衬底上形成非晶硅层，在非晶硅层上形成保温层，图案化保温层，并照射图案化保温层。

公开(公告)号：US07435667B2

公开(公告)日：2008-10-14

申请号：US10772511

申请日：2004-02-05

Applicant: Jia-Xing Lin ,  Chi-Lin Chen ,  Yu-Cheng Chen ,  Yih-Rong Luo

Inventor： Jia-Xing Lin ,  Chi-Lin Chen ,  Yu-Cheng Chen ,  Yih-Rong Luo

IPC: H01L21/20

CPC classification number: H01L21/02686 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78603

Abstract: A heat sink layer is formed on portions of a substrate, and then an amorphous silicon layer is formed thereon. The heat coefficient of the sink layer is greater than that of the substrate. When an excimer laser heats the amorphous silicon layer to crystallize the amorphous silicon, nucleation sites are formed in the amorphous silicon layer on the heat sink layer. Next, laterally expanding crystallization occurs in the amorphous silicon layer on the substrate to form polysilicon having a crystal size of a micrometer.

Abstract translation: 在衬底的部分上形成散热层，然后在其上形成非晶硅层。 吸收层的热系数大于衬底的热系数。 当准分子激光器加热非晶硅层以使非晶硅结晶时，在散热层上的非晶硅层中形成成核位点。 接着，在基板上的非晶硅层发生横向膨胀结晶，形成晶体尺寸为微米的多晶硅。

公开(公告)号：US07410889B2

公开(公告)日：2008-08-12

申请号：US11393747

申请日：2006-03-31

Applicant: Yu-Cheng Chen ,  Jia-Xing Lin ,  Hung-Tse Chen

Inventor： Yu-Cheng Chen ,  Jia-Xing Lin ,  Hung-Tse Chen

IPC: H01L21/20

CPC classification number: H01L21/02686 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L27/1281

Abstract: A silicon layer and a heat-retaining layer are formed on a substrate in turn, and a laser beam with a sharp energy density gradient is next utilized to perform a laser heating process for inducing super lateral growth crystallization occurred in part of the Si layer. The heat-retaining layer provides additional heating-enhancement function for the Si layer in crystallization so as to increase the super lateral growth length. Then, the laser beam is repeatedly moved to irradiate the substrate to finish the crystallization process for the full substrate.

Abstract translation: 依次在基板上形成硅层和保温层，接着利用具有尖锐的能量密度梯度的激光束进行激光加热处理，以引起部分Si层发生的超横向生长结晶。 保温层为结晶中的Si层提供额外的加热增强功能，以增加超横向生长长度。 然后，激光束被反复移动以照射基板，以完成整个基板的结晶处理。

公开(公告)号：US20080045042A1

公开(公告)日：2008-02-21

申请号：US11750577

申请日：2007-05-18

Applicant: Fang-Tsun Chu ,  Jia-Xing Lin

Inventor： Fang-Tsun Chu ,  Jia-Xing Lin

IPC: H01L21/428 ,  G03F1/00

CPC classification number: B23K26/066 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268

Abstract: A method for crystallizing an amorphous silicon layer is provided. (A) A substrate with an amorphous silicon layer thereon is provided. (B) A mask with a mask pattern is provided. The mask pattern includes a first region pattern and a second region pattern in mirror symmetry. (C) The first region pattern is selected as a first scanning region and the substrate is moved toward a first direction, such that a laser beam passes through the first region pattern to crystallize the amorphous silicon layer along the first direction. (D) The second region pattern is selected as a second scanning region and the substrate is moved toward a second direction, such that the laser beam passes through the second region pattern to crystallize the amorphous silicon layer along the second direction. (E) The steps of (C) and (D) are repeated to convert the whole amorphous silicon layer into a polysilicon layer.

Abstract translation: 提供了一种使非晶硅层结晶的方法。 （A）提供其上具有非晶硅层的基板。 （B）提供具有掩模图案的面具。 掩模图案包括第一区域图案和镜像对称的第二区域图案。 （C）第一区域图案被选择为第一扫描区域，并且基板朝向第一方向移动，使得激光束穿过第一区域图案以沿着第一方向结晶非晶硅层。 （D）第二区域图案被选择为第二扫描区域，并且基板朝向第二方向移动，使得激光束穿过第二区域图案以沿着第二方向结晶非晶硅层。 （E）重复（C）和（D）的步骤以将整个非晶硅层转化为多晶硅层。

公开(公告)号：US20060172469A1

公开(公告)日：2006-08-03

申请号：US11312473

申请日：2005-12-21

Applicant: Jia-Xing Lin ,  Yu-Cheng Chen ,  Chi-Lin Chen

Inventor： Jia-Xing Lin ,  Yu-Cheng Chen ,  Chi-Lin Chen

IPC: H01L21/84 ,  H01L21/20

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

Abstract: An amorphous silicon (a-Si) layer is first formed on a substrate, and the a-Si layer is next patterned to form silicon islands for defining device active regions. Then, a single shot laser beam with long pulse is utilized to irradiate each silicon island, and lateral growth crystallization is induced in each silicon island for transforming a-Si into polycrystalline silicon (poly-Si). Finally, the general subsequent processes for thin film transistor (TFT) fabrication are performed in turn to fabricate poly-Si TFTs.

Abstract translation: 首先在衬底上形成非晶硅（a-Si）层，然后将a-Si层图案化以形成用于限定器件有源区的硅岛。 然后，利用具有长脉冲的单次激光束照射每个硅岛，并且在每个硅岛中诱导横向生长结晶以将a-Si转化为多晶硅（poly-Si）。 最后，依次进行薄膜晶体管（TFT）制造的一般后续处理以制造多晶硅TFT。