公开(公告)号：US6150216A

公开(公告)日：2000-11-21

申请号：US222737

申请日：1998-12-29

Applicant: Kuo-Chi Lin ,  Kun-Chi Lin

Inventor： Kuo-Chi Lin ,  Kun-Chi Lin

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/20 ,  H01G4/06 ,  H01G4/30

CPC classification number: H01L28/84 ,  H01L21/76895 ,  H01L27/10855 ,  H01L28/60

Abstract: A method for forming an electrode of semiconductor device capacitor is disclosed. The method comprises forming a dielectric layer on a semiconductor substrate and then using photolithographic method to etch a trench through the dielectric layer to expose specific part of the semiconductor substrate. A polysilicon layer is then formed over the dielectric layer and filled the trench. The polysilicon layer is patterned by a photoresist layer and etched back to the dielectric layer, then a polysilicon rod is formed. A spacer method is used to form an amorphized silicon spacer is sidewall of the polysilicon rod. The polysilicon rod is then implanted to form an amorphized polysilicon layer on top surface of the polysilicon rod. Final hemispherical grain silicon is formed on the spacer and the amorphized polysilicon layer to increase the surface area of the polysilicon rod. Thereby, an electrode of a semiconductor device capacitor is formed, and the capacitance of capacitor is enhanced.

Abstract translation: 公开了一种形成半导体器件电容器的电极的方法。 该方法包括在半导体衬底上形成电介质层，然后使用光刻法蚀刻通过电介质层的沟槽，以露出半导体衬底的特定部分。 然后在电介质层上形成多晶硅层，并填充沟槽。 通过光致抗蚀剂层将多晶硅层图案化并回蚀刻到电介质层，然后形成多晶硅棒。 使用间隔法形成非晶硅衬垫是多晶硅棒的侧壁。 然后植入多晶硅棒以在多晶硅棒的顶表面上形成非晶化多晶硅层。 在间隔物和非晶化多晶硅层上形成最终的半球形晶粒硅以增加多晶硅棒的表面积。 由此，形成半导体器件电容器的电极，提高电容器的电容。

公开(公告)号：US20120138640A1

公开(公告)日：2012-06-07

申请号：US12959428

申请日：2010-12-03

Applicant: Kuo-Chi LIN

Inventor： Kuo-Chi LIN

IPC: A41D27/22

CPC classification number: A47G25/186 ,  A47G25/30 ,  A47G25/40

Abstract: A multifunction clothes hanger includes a main body, a hook, an annular member and two clothes hangers. A protrusion of a cylindrical body of each clothes hanger enters a T-shaped through-groove at the bottom of the main body and moves into a transverse portion of the T-shaped through-groove to enter left and right through-holes of the main body. The protrusion is engaged with grooves disposed on the inner sides of the left and right through-holes, respectively. Furthermore, the hook is inserted into a straight through-hole at the upper portion of the main body until the threaded bottom with a thread thereon reaches the bottom of the main body to engage with a screw nut of the annular member. Another space-saving multifunction clothes hanger further includes a fixing base, upper and lower arms, two grooves, left and right baffles and two screw holes.

Abstract translation: 多功能衣架包括主体，钩，环形构件和两个衣架。 每个衣架的圆柱体的突出部进入主体底部的T形通槽，并移动到T形通槽的横向部分中，以进入主体的左右通孔 身体。 突起与分别设置在左右通孔的内侧的槽接合。 此外，将钩子插入到主体上部的直通孔中，直到带有螺纹的螺纹底部到达主体的底部以与环形构件的螺母接合。 另一个节省空间的多功能衣架还包括固定底座，上下臂，两个凹槽，左右挡板和两个螺孔。

公开(公告)号：US20110116883A1

公开(公告)日：2011-05-19

申请号：US12620568

申请日：2009-11-17

Applicant: Kuo-Chi LIN

Inventor： Kuo-Chi LIN

IPC: B23B27/00

CPC classification number: B23B27/002 ,  B23B27/007 ,  B23B2250/16 ,  B23B2260/138 ,  Y10T82/2585 ,  Y10T408/76

Abstract: A cutting tool includes a blade, a seat, a shank and a damper. The blade is connected to the seat. The seat is connected to the shank. The shank includes a pocket defined therein and a thread formed on the wall of the pocket. A damper is inserted in the pocket. The damper includes a thread formed on the periphery for engagement with the thread of the shank, with a small gap defined between the threads.

Abstract translation: 切割工具包括刀片，座椅，柄和阻尼器。 刀片连接到座椅。 座椅连接到柄。 柄包括限定在其中的口袋和形成在口袋的壁上的线。 在口袋中插入阻尼器。 阻尼器包括形成在周边上用于与柄的螺纹接合的螺纹，在螺纹之间限定有小的间隙。

公开(公告)号：US6074912A

公开(公告)日：2000-06-13

申请号：US245891

申请日：1999-02-08

Applicant: Kuen-Yow Lin ,  Kuo-Chi Lin

Inventor： Kuen-Yow Lin ,  Kuo-Chi Lin

IPC: H01L21/60 ,  H01L21/8242

CPC classification number: H01L27/10894 ,  H01L21/76897 ,  H01L27/10873

Abstract: A method for forming different area vias of dynamic random access memory is disclosed. Essential points of the invention comprise spacer is only formed on gate of periphery circuit, and depth of passivation layer of periphery circuit gates is larger than depth of layer that capped over gates of cell. The provided method comprises following steps: First, capping a layer over gate of cell and gate of periphery circuit and then forming spacer on gate of periphery circuit, where depth of capping layer is smaller than depth of passivation layer of periphery circuit gate. Second, both gate of cell and gate of periphery circuit are cover by a dielectric layer. Third, vias in both cell and periphery circuit are formed simultaneously by photolithography and etching, where etching comprises etching of dielectric layer and etching of passivation layer. Advantageous of the invention is only a photolithography process is necessary and then throughput is enhanced.

Abstract translation: 公开了形成动态随机存取存储器的不同区域通孔的方法。 本发明的要点包括仅在外围电路的栅极上形成间隔物，并且外围电路栅极的钝化层的深度大于封闭电池栅极的层的深度。 提供的方法包括以下步骤：首先，在外围电路的单元和栅极的栅极上覆盖一层，然后在外围电路的栅极上形成间隔，其中覆盖层的深度小于外围电路栅极的钝化层的深度。 第二，外围电路的栅极和栅极的栅极被介电层覆盖。 第三，通过光刻和蚀刻同时形成电池和外围电路中的通孔，其中蚀刻包括蚀刻介电层和蚀刻钝化层。 本发明的有益之处在于仅需要光刻工艺，并且提高生产量。

公开(公告)号：US06191042B1

公开(公告)日：2001-02-20

申请号：US09246761

申请日：1999-02-08

Applicant: Chien-Hua Tsai ,  Kuo-Chi Lin

Inventor： Chien-Hua Tsai ,  Kuo-Chi Lin

IPC: H01L21311

CPC classification number: H01L21/31116 ,  H01L21/76804 ,  H01L21/76816

Abstract: A method of fabricating a node contact opening includes formation of a dielectric layer on a substrate. An opening is formed with C4F8/Ar/CH2F2 as an etchant. A portion of the dielectric layer under the opening is etched with CHF3/CO as an etchant until the substrate is exposed. A node contact opening is formed.

Abstract translation: 制造节点接触开口的方法包括在基底上形成电介质层。 用C4F8 / Ar / CH2F2作为蚀刻剂形成开口。 用CHF 3 / CO作为蚀刻剂蚀刻开口下方的电介质层的一部分，直到基板露出。 形成节点接触开口。