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    LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF
    16.
    发明申请
    LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF 审中-公开
    发光二极管及其制造方法

    公开(公告)号：US20140186981A1

    公开(公告)日：2014-07-03

    申请号：US14198173

    申请日：2014-03-05

    Applicant: LEXTAR ELECTRONICS CORP.

    Inventor： Chia-En LEE

    IPC: H01L33/60 ,  H01L33/62

    CPC classification number: H01L33/60 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A fabrication method of a light-emitting diode including forming an epitaxial layer on a first substrate; forming a metal pad and a stress release ring on the epitaxial layer, wherein the stress release ring surrounds the metal pad; performing a substrate replacement process to transfer the epitaxial layer, the metal pad, and the stress release ring onto a second substrate, wherein the metal pad and the stress release ring are disposed between the epitaxial layer and the second substrate; patterning the epitaxial layer to expose a portion of the stress release ring; and removing the stress release ring to suspend a portion of the epitaxial layer. Moreover, a light emitting diode is provided.

    Abstract translation: 一种发光二极管的制造方法，包括在第一基板上形成外延层; 在所述外延层上形成金属焊盘和应力释放环，其中所述应力释放环围绕所述金属焊盘; 执行衬底替换工艺以将外延层，金属焊盘和应力释放环转移到第二衬底上，其中金属焊盘和应力释放环设置在外延层和第二衬底之间; 图案化外延层以暴露一部分应力释放环; 以及去除所述应力释放环以悬浮所述外延层的一部分。 此外，提供了发光二极管。

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