公开(公告)号：US20090090984A1

公开(公告)日：2009-04-09

申请号：US12061358

申请日：2008-04-02

Applicant: M. Asif Khan ,  Vinod Adivarahan ,  Qhalid Fareed ,  Grigory Simin ,  Naveen Tipirneni

Inventor： M. Asif Khan ,  Vinod Adivarahan ,  Qhalid Fareed ,  Grigory Simin ,  Naveen Tipirneni

IPC: H01L29/78 ,  H01L21/31

CPC classification number: H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

Abstract: Methods of achieving high breakdown voltages in semiconductor devices by suppressing the surface flashover using high dielectric strength insulating encapsulation material are generally described. In one embodiment of the present invention, surface flashover in AlGaN/GaN heterostructure field-effect transistors (HFETs) is suppressed by using high dielectric strength insulating encapsulation material. Surface flashover in as-fabricated III-Nitride based HFETs limits the operating voltages at levels well below the breakdown voltages of GaN.

Abstract translation: 一般来说，通过使用高介电强度绝缘包封材料抑制表面闪络来实现半导体器件中的高击穿电压的方法。 在本发明的一个实施例中，通过使用高介电强度绝缘封装材料来抑制AlGaN / GaN异质结构场效应晶体管（HFET）中的表面闪络。 基于III-Nitride的HFET的表面闪络将工作电压限制在远低于GaN击穿电压的水平。

公开(公告)号：US4614961A

公开(公告)日：1986-09-30

申请号：US658961

申请日：1984-10-09

Applicant: M. Asif Khan ,  Richard G. Schulze ,  Richard A. Skogman

Inventor： M. Asif Khan ,  Richard G. Schulze ,  Richard A. Skogman

IPC: G01J1/02 ,  H01L21/205 ,  H01L31/0304 ,  H01L31/108 ,  H01L31/18 ,  H01L33/00 ,  H01L27/14 ,  H01L31/00

CPC classification number: H01L31/03046 ,  H01L31/108 ,  H01L31/184 ,  Y02E10/544

Abstract: A method of preparing a UV detector of Al.sub.x Ga.sub.1-x N. Metal organic chemical vapor deposition (MOCVD) is utilized to grow AlN and then Al.sub.x Ga.sub.1-x N on a sapphire substrate. A photodetector structure is fabricated on the AlGaN.

Abstract translation: 制备Al x Ga 1-x N的UV检测器的方法。 金属有机化学气相沉积（MOCVD）用于在蓝宝石衬底上生长AlN，然后生长Al x Ga 1-x N。 在AlGaN上制造光电检测器结构。