公开(公告)号：US06570305B1

公开(公告)日：2003-05-27

申请号：US09339226

申请日：1999-06-24

申请人： Masao Urayama ,  Keiichiro Uda ,  Seiki Yano ,  Yoshio Inoue

发明人： Masao Urayama ,  Keiichiro Uda ,  Seiki Yano ,  Yoshio Inoue

IPC分类号： H01J102

CPC分类号： H01J3/022 ,  H01J1/3044

摘要： A silicon substrate is used as the substrate, on which a conical projection is formed as a cathode. A gate electrode is arranged via an insulating film formed on the substrate. The gate electrode is formed so as to enclose and encircle the cathode while the pointed portion of the cathode and the surface of the gate electrode are coated with two layered coating films.

摘要翻译： 使用硅衬底作为衬底，其上形成有圆锥形突起作为阴极。 栅极通过形成在基板上的绝缘膜布置。 栅电极形成为围绕阴极，阴极的尖部和栅电极的表面涂覆有两层涂膜。

公开(公告)号：US06545396B1

公开(公告)日：2003-04-08

申请号：US09655737

申请日：2000-09-06

申请人： Hiroshi Ohki ,  Masao Urayama

发明人： Hiroshi Ohki ,  Masao Urayama

IPC分类号： H01J102

CPC分类号： H01J31/127

摘要： Featured is an image forming device for driving field emission electron sources capable of low-vacuum operation, high in ion impact resistance, and controlled in orientation, under X-Y addressing through electrode lines of simple and low-cost configuration. The image forming device includes cathode electrode lines and gate electrode lines of wire structure, where the field emission electron sources are selectively grown on the cathode electrode lines. A vacuum gap is provided between a supporting substrate on the back-plate side and the cathode electrode lines, and a getter is arranged on the supporting substrate.

摘要翻译： 特色是一种用于驱动场致发射电子源的图像形成装置，其能够通过简单且低成本配置的电极线在X-Y寻址下进行低真空操作，高离子冲击强度和受控制的取向。 图像形成装置包括阴极电极线和线结构的栅极电极线，其中场致发射电子源在阴极电极线上选择性地生长。 在背板侧的支撑基板和阴极电极线之间设置真空间隙，在支撑基板上设置吸气剂。

公开(公告)号：US07078863B2

公开(公告)日：2006-07-18

申请号：US10381477

申请日：2001-09-27

申请人： Tetsuya Ide ,  Junichi Sawahata ,  Masao Urayama

发明人： Tetsuya Ide ,  Junichi Sawahata ,  Masao Urayama

IPC分类号： G09G3/10

CPC分类号： H01J29/488 ,  H01J1/304 ,  H01J3/021 ,  H01J3/029 ,  H01J29/467 ,  H01J2329/00

摘要： A cold-cathode electron source having an improved utilization efficiency of an electron beam and a simple structure. The cold-cathode electron source comprises a gate electrode (4) provided on a substrate (2) through an insulating layer (3) and an emitter (6) extending through the insulating layer (3) and the gate electrode (4) and disposed in an opening of the gate. During the emission of electrons from the emitter (6), the following relationships are satisfied: 10 [V/μm]≧(Va−Vg)/(Ha−Hg)≧Vg/Hg; and Vg/Hg [V/μm]≧Va×10−4×(9.7−1.3×1n(Hg))×(1000/Ha)0.5, where Ha [μm] is an anode-emitter distance, Va [V] is an anode-emitter voltage, Hg [μm] is a gate-emitter distance, and Vg [V] is a gate-emitter voltage.

摘要翻译： 具有提高电子束的利用效率和简单结构的冷阴极电子源。 冷阴极电子源包括通过绝缘层（3）设置在基板（2）上的栅极（4）和延伸穿过绝缘层（3）和栅电极（4）的发射极（6） 在门口的开口。 在从发射体（6）发射电子的过程中，满足以下关系：10 V / V m =（Va-Vg）/（Ha-Hg）> = Vg / Hg; 和Vg / Hg [V / mum] = Vax10-4×（9.7-1.3x1n（Hg））x（1000 / Ha）<0.5>其中Ha ]是阳极 - 发射极距离，Va [V]是阳极 - 发射极电压，Hg [m]是栅 - 发射极距离，Vg [V]是栅 - 发射极电压。

公开(公告)号：US5800233A

公开(公告)日：1998-09-01

申请号：US599315

申请日：1996-02-09

申请人： Seiki Yano ,  Masao Urayama ,  Yoshiyuki Takegawa ,  Yuko Morita

发明人： Seiki Yano ,  Masao Urayama ,  Yoshiyuki Takegawa ,  Yuko Morita

IPC分类号： H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01J9/40

CPC分类号： H01J9/025

摘要： A cathode is formed on a glass substrate by depositing nickel thereon, and silicon dioxide is allowed to accumulate on the cathode by sputtering to form an insulator film. Then, a gate electrode is provided on the insulator film by depositing nickel thereon. A hole is formed on the glass substrate by lithography to carry out patterning, and the gate electrode and the insulator film are selectively etched to create a hole for the formation of an emitter emitting electrons. Furthermore, nickel is stacked into the hole by deposition to form the emitter, and subsequently the emitter is covered with sulfur as a high vapor-pressure substance to form a high vapor-pressure substance layer.

摘要翻译： 通过在其上沉积镍在玻璃基板上形成阴极，并且通过溅射使二氧化硅积聚在阴极上以形成绝缘膜。 然后，通过在其上沉积镍，在绝缘膜上设置栅电极。 通过光刻在玻璃基板上形成孔以进行图案化，并且选择性地蚀刻栅电极和绝缘膜，以形成用于形成发射电子的发射极的孔。 此外，通过沉积将镍堆积到孔中以形成发射极，随后用硫作为高蒸气压物质覆盖发射体以形成高蒸气压物质层。