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11.发明授权Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates 有权在{30-31}或切割含镓和氮的底物上形成激光二极管的生长结构和方法公开(公告)号：US08351478B2
公开(公告)日：2013-01-08
申请号：US12884993
申请日：2010-09-17
Applicant: James W. Raring , Nick Pfister , Mathew Schmidt , Christiane Poblenz
Inventor： James W. Raring , Nick Pfister , Mathew Schmidt , Christiane Poblenz
IPC: H01S5/00
CPC classification number: H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/2009 , H01S5/227 , H01S5/3202 , H01S5/3213 , H01S5/3407 , H01S5/4025
Abstract: An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate.
Abstract translation: 一种光学器件，其具有被配置用于一个或多个所选择的发光波长的结构化的有源区，并形成在切断的m面镓和含氮衬底上。
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12.发明授权Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates 有权生长结构和在{20-21}或切断含镓和氮的底物上形成激光二极管的方法公开(公告)号：US08355418B2
公开(公告)日：2013-01-15
申请号：US12883093
申请日：2010-09-15
Applicant: James W. Raring , Nick Pfister , Mathew Schmidt , Christiane Poblenz
Inventor： James W. Raring , Nick Pfister , Mathew Schmidt , Christiane Poblenz
IPC: H01S5/00
CPC classification number: H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/028 , H01S5/2009 , H01S5/227 , H01S5/3202 , H01S5/3213 , H01S5/3407 , H01S5/4025
Abstract: An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate.
Abstract translation: 一种光学器件，其具有被配置用于一个或多个所选择的发光波长的结构化的有源区，并形成在切断的m面镓和含氮衬底上。
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